The present disclosure provides a semiconductor device. The semiconductor device includes a die stack, an intervening bonding layer, and a carrier structure. The intervening bonding layer is positioned on the die stack. The carrier structure is disposed on the intervening bonding layer opposite to the die stack. The carrier structure includes a heat dissipation unit configured to transfer heat generated from the die stack. The heat dissipation unit includes composite vias and conductive plates. Each of the composite vias includes a first through semiconductor via and a second through semiconductor via. The conductive plates are couple to the composite vias.

The present disclosure provides a method for manufacturing a semiconductor device having a mark. The method includes: providing a substrate including a device region and a peripheral region adjacent to the device region; forming an interconnect layer over the substrate; depositing a first dielectric layer on the interconnect layer; forming a redistribution layer (RDL) over the first dielectric layer in the device region; depositing a second dielectric layer on the RDL in the device region and the first dielectric layer in the device region and the peripheral region; and removing portions of the second dielectric layer, the first dielectric layer and the interconnect structure in the peripheral region to form the mark in the peripheral region.

A semiconductor device package includes a substrate, and interconnection structure and a package body. The interconnection structure is disposed on the substrate. The interconnection structure has a conductive structure and a first dielectric layer covering a portion of the conductive structure. The conductive structure defines an antenna feeding point. The package body is disposed on the substrate and covers the interconnection structure.

Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a first transistor device on a substrate, a second transistor device on the substrate, and a power rail between the first transistor device and the second transistor device. The power rail may include a first section with a first critical dimension (CD), a second section with a second CD, and a third section with a third CD.

Three-dimensional (3D) NAND memory devices and methods are provided. In one aspect, a fabrication method includes forming a conductor/insulator stack over a substrate, configuring memory cells through the conductor/insulator stack, forming a conductive layer, removing a portion of the conductive layer to form an opening in the conductive layer, depositing a dielectric material in a space of the opening, and forming an airgap in the space.

A method for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. In some embodiments, a first in-situ process including a pre-treatment process of the work-function metal layer is performed. By way of example, the pre-treatment process removes an oxidized layer of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the first in-situ process, a second in-situ process including a deposition process of another metal layer over the treated work-function metal layer is performed.

A semiconductor device includes: a semiconductor body having a first surface and a second surface; a plurality of semiconductor device elements in the semiconductor body at the first surface; a wiring area over the first surface of the semiconductor body; and an impurity in the semiconductor body. A profile of concentration of the impurity has a penetration depth from the second surface into the semiconductor body along a vertical direction. The profile of concentration has a concentration plateau along a vertical segment ranging from 30% to 70% of the penetration depth, the plateau having a fluctuation of the concentration of less than 20%.

An integrated circuit package and the method of forming the same are provided. The integrated circuit package may include an integrated circuit die and a dielectric material on sidewalls of the integrated circuit die. The integrated circuit die may include a substrate, a protective structure in the substrate, an interconnect structure on the substrate, and a seal ring structure in the interconnect structure and in contact with the protective structure. The protective structure and the substrate may include a same semiconductor material, and the protective structure may include a first dopant and a second dopant different from the first dopant. The interconnect structure may include dielectric layers and conductive features in the dielectric layers. The seal ring structure may encircle the conductive features of the interconnect structure in a top-down view.

The present disclosure provides a method for manufacturing a semiconductor device having a mark. The method includes: providing a substrate including a device region and a peripheral region adjacent to the device region; forming an interconnect layer over the substrate; depositing a first dielectric layer on the interconnect layer; forming a redistribution layer (RDL) over the first dielectric layer in the device region; depositing a second dielectric layer on the RDL in the device region and the first dielectric layer in the device region and the peripheral region; and removing portions of the second dielectric layer, the first dielectric layer and the interconnect structure in the peripheral region to form the mark in the peripheral region.

A system for printing metal interconnects on a substrate includes an anode substrate. A plurality of anodes are arranged on one side of the anode substrate with a first predetermined gap between adjacent ones of the plurality of anodes. A first plurality of fluid holes have one end located between the plurality of anodes. A plurality of control devices is configured to selectively supply current to the plurality of anodes, respectively. The anode substrate is arranged within a second predetermined gap of a work piece substrate including a metal seed layer. A ratio of the second predetermined gap to the first predetermined gap is in a range from 0.5:1 and 1.5:1. An array controller is configured to energize selected ones of the plurality of anodes using corresponding ones of the plurality of control devices while electrolyte solution is supplied through the first plurality of fluid holes between the anode substrate and the work piece substrate.