Patent classifications
H
ELECTRICITY
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H10
SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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H10W
GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
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20/00
Interconnections in chips, wafers or substrates
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H10W20/046

Semiconductor structure including an electrode cover layer over a capacitor of a dynamic random access memory (DRAM) formed in a substrate, and a contact structure electrically connected to the electrode cover layer, and method of making the same
12519014 · 2026-01-06 · ·

A semiconductor structure includes: an electrode cover layer; a first conductive structure on the electrode cover layer; a contact structure, including a first and a first contact layer. The first contact layer is in contact with the first conductive structure, the bottom of the second contact layer is in contact with the top of the first contact layer, the width of the first contact layer is greater than the width of the bottom of the second contact layer, the lower surface of the contact structure is not lower than the lower surface of the electrode cover layer, and the resistivity of the first conductive structure is not greater than that of the contact structure and is not greater than that of the electrode cover layer.