Proposed are a wafer heating apparatus and a wafer processing apparatus using the same. More particularly, proposed are a wafer heating apparatus having an improved structure to enable efficient cooling of a terminal block, and a wafer processing apparatus using the same. A wafer heating apparatus for heating a wafer according to one embodiment includes a heater disposed below the wafer and configured to serve as a heat source, a cooling plate disposed below the heater and configured to provide cool air, and a terminal block configured to supply power to the heater and having a lower end portion in contact with the cooling plate.

A substrate processing method processes a substrate. The substrate has a major surface including a concave-portion forming surface that forms a concave portion. A to-be-removed layer is formed in the concave portion. The substrate processing method includes an etching step of supplying an etching liquid that contains etching ions to the major surface of the substrate to etch the to-be-removed layer, a concentrating step of concentrating the etching liquid on the major surface of the substrate, a hydrophilizing step of hydrophilizing the concave-portion forming surface exposed by concentrating the etching liquid, an ion diffusing step of diffusing the etching ions into a rinsing liquid by supplying the rinsing liquid to the major surface of the substrate after the hydrophilizing step, and a rinsing liquid removing step of removing the rinsing liquid from the major surface of the substrate.

A substrate processing method includes: receiving, by a transfer arm, a substrate from a batch processing section in which a plurality of substrates is collectively processed in a state where each of the plurality of substrates stands upright; disposing the substrate on a disposing unit including a pin, a first liquid film being formed on an upper surface of the substrate from a process in the batch processing section; supplying a pure water toward the upper surface of the substrate, thereby forming a second liquid film of the pure water on the upper surface of the substrate; stop supplying the pure water and maintaining the second liquid film on the upper surface of the substrate for a predetermined time, and transporting the substrate to a single wafer processing section in which the plurality of substrates are processed one by one in a horizontal state.

A substrate processing apparatus includes a substrate processing unit for processing a substrate by discharging a chemical liquid to the substrate; a chemical storage unit connected to the substrate processing unit by a chemical liquid supply line and a chemical liquid recovery line; and a liquid replenishment unit including an evaporation measurement member for measuring the amount of evaporation of water contained in the chemical liquid, and a water supply member for supplying water to the chemical liquid.

The present invention relates to an etching device and an etching method thereof, the etching device comprising: an etchant supply unit for supplying an etchant to an etching chamber; a rinsing liquid supply unit for supplying a rinsing liquid to the etching chamber, a cleaning liquid supply unit for supplying a cleaning liquid to the etching chamber, and a first pressurization maintaining unit for maintaining at least one of the etching chamber and the etchant supply unit in a pressurized atmosphere.

The present invention relates to a substrate processing method, a substrate processing apparatus, and a substrate processing liquid. In the substrate processing method, a substrate W including a first layer G is processed. A second mixed liquid P2 contains an etching liquid and iodide ions (I.sup.). The substrate processing method includes a first adjustment step and an etching step. In the first adjustment step, at least one of oxygen and ozone is added to the second mixed liquid P2. In the etching step, the second mixed liquid P2 adjusted in the first adjustment step is supplied to the substrate W. In the etching step, the first layer G is etched.

Disclosed is a substrate processing method including: supplying a processing liquid onto a rotating substrate; and irradiating, by the laser irradiation assembly, the rotating substrate, on which a liquid film of the processing liquid is formed, with a laser to heat the substrate, in which the substrate is divided into one or more unit irradiation areas, the laser irradiation assembly designates any one of the one or more unit irradiation areas and irradiates the designated unit irradiation area with the laser, and synchronizes an oscillation frequency of the laser with a rotation speed of the substrate so that an irradiation position of the laser is the designated unit irradiation area.

A substrate processing apparatus includes a chamber, a collection pipe, and a collection unit. In the chamber, a mixed solution of a chemical solution and an organic solvent acts on a main surface of a substrate. The collection pipe includes an upstream end portion connected to the chamber. The mixed solution from the chamber flows in the collection pipe. The collection unit includes a separation membrane separating the chemical solution from the mixed solution supplied through the collection pipe to increase a concentration of the organic solvent in the mixed solution.

An apparatus for treating a substrate includes a support unit that supports the substrate and a nozzle that dispenses liquid plasma to etch a film formed on the substrate supported on the support unit.

A method of processing a substrate includes an etchant supplying operation of supplying an etchant to a substrate; a puddle operation of, by rotating the substrate at a first rotational speed, forming a liquid film of the etchant supplied to the substrate in a puddle shape; and a thickness adjusting operation of changing a rotational speed of the substrate to a rotational speed different from the first rotational speed to adjust a thickness of the liquid film of the etchant. Using the method, dispersion of the etching rate may be effectively controlled.