Embodiments described herein relate to a susceptor kit. The susceptor kit includes a susceptor support plate including a plurality of susceptor lift pin holes and a plurality of susceptor support holes, a plurality of susceptor supports recessed within the plurality of susceptor support holes and coupled to the susceptor support plate, and a lift pin assembly. The plurality of susceptor supports receive a plurality of susceptor support pins. The support body supports the support pin link in a spaced apart relation to the susceptor support plate. The lift pin assembly is received in the plurality of susceptor lift pin holes. The lift pin assembly includes a lift pin cap and a susceptor lift pin comprising a susceptor stop plate. The susceptor support plate stop is receivable within the susceptor lift pin holes.

A wafer lift pin system is capable of dynamically modulating or adjusting the flow of gas into and out of lift pins of the wafer lift pin system to achieve and maintain a consistent pressure in supply lines that supply the gas to the lift pins. This enables the wafer lift pin system to precisely control the speed, acceleration, and deceleration of the lift pins to achieve consistent and repeatable lift pin rise times and fall times. A controller and various sensors and valves may control the gas pressures in the wafer lift pin system based on various factors, such as historic rise times, historic fall times, and/or the condition of the lift pins. This enables smoother and more controlled automatic operation of the lift pins, which reduces and/or minimizes wafer shifting and wafer instability, which may reduce processing defects and maintain or improve processing yields.

A plasma processing system is provided. The system comprises a plasma processing apparatus, a transfer apparatus connected to the plasma processing apparatus, and a controler. The plasma processing apparatus includes a substrate support including a support unit for a substrate as well as an annular member disposed to surround the substrate. The substrate support includes a plurality of insertion holes passing through the support unit, lifters to elevate/lower the annular member through the holes insertion and a temperature adjustment mechanism for adjusting a temperature of the support unit. The transfer apparatus includes a transfer mechanism for transferring the annular member to the substrate support. The annual member has includes concave portions in its bottom surface, into which upper end the lifters are fitted.

The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a loading/unloading chamber (400) at least in part adjacent to the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said loading/unloading chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200); wherein said external robot (500) comprises an articulated arm (510) arranged to handle both treated substrates and untreated substrates as well as substrates support devices.

The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) at least in part adjacent to the load-lock chamber (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200).

An apparatus includes a lifting device and a motor assembly. The lifting device is disposed in a lifting device housing and is configured to adjust a vertical position of an optical component connected to the lifting device. The motor assembly is disposed in a motor housing and is configured to drive the lifting device to adjust the vertical position of the optical component. The lifting device housing, the motor housing, and the optical component are disposed in an ultra-high vacuum chamber of an enclosure. In the case of motor failure, the motor housing can be disconnected from the lifting device housing, and the motor assembly can be decoupled from the lifting device, such that the motor assembly can be replaced.

Disclosed is a substrate processing apparatus capable of checking an etch amount of a ring member without opening a chamber. The substrate processing apparatus using plasma includes a process chamber defining a process space, a chuck located in the process space to support a substrate from below, a ring member located around the chuck, a ring lifting device configured to raise and lower the ring member, and a controller configured to measure an etch amount of the ring member and to adjust the height of the ring member based on the etch amount using the ring lifting device. A substrate-type sensor device including a laser light source and a camera is located in the process space. The laser light source irradiates the chuck and the ring member. The camera captures an image including the chuck and the ring member and transmits the image to the controller for etch amount measurement.

A method for monitoring a dechucking of a wafer includes illuminating, using light generated from a light source, the wafer disposed on a wafer holder in a processing chamber. The method further includes lifting, using pins disposed in the wafer holder, the wafer, and during the lifting, collecting a portion of the light at a light detector. And the method further includes, based on the collected portion of the light, determining whether to continue the lifting to complete the dechucking.

Disclosed is a substrate lifting device according to an embodiment which includes: a lift pin having one side supporting a substrate, and including a hollow line therein; a plate fixing the other side of the lift pin; a driving unit configured to move the chuck or the plate so that the lift pin moves along the pinhole; and sensors connected to the hollow line, and configured to transmit and receive signals through the hollow line.

A substrate processing apparatus includes a chamber, a substrate holding portion, and a moving mechanism. The chamber accommodates a substrate. The substrate holding portion is disposed in the chamber and holds the substrate one by one. The moving mechanism moves the substrate holding portion. The substrate holding portion includes a chuck pin that comes into contact with the substrate. The moving mechanism moves the substrate holding portion within the chamber between at least one processing position at which the substrate is processed with a processing liquid and a cleaning position at which the chuck pin is cleaned.