A bonded structure is disclosed. The bonded structure can comprise a first semiconductor element having a first contact pad. An interposer can include a second contact pad on a first side of the interposer and a third contact pad and a fourth contact pad on a second side of the interposer opposite the first side, the second contact pad bonded to the first contact pad; a second semiconductor element having a fifth contact pad bonded to the third contact pad and a sixth contact pad bonded to the fourth contact pad. A switching circuitry can be configured to switch between a first electrical connection between the second and third contact pads and a second electrical connection between the second and fourth contact pads.

A power semiconductor module (34), comprising a substrate (12) which carries a plurality of power semiconductor devices (10), wherein the plurality of power semiconductor devices (10) comprises a first group of power semiconductor devices (10) and a second group of at least one power semiconductor device (10). The first group of power semiconductor devices (10) consists of at least two non-damaged power semiconductor devices (10b, 10c), and the second group of power semiconductor devices (10) consists of at least one damaged power semiconductor device (10a). The at least two non-damaged power semiconductor devices (10b, 10c) are electrically interconnected in a parallel configuration, and the second group of at least one power semiconductor device (10) is electrically separated from the members of the first group of power semiconductor devices (10). The disclosure further relates to an electrical converter and a method for manufacturing a power semiconductor module (34).