The inventive concept provides a substrate treating apparatus. According to the inventive concept, the substrate treating apparatus treats the substrate by supplying a treating liquid on a rotating substrate. The exhaust unit exhausting an atmosphere of an inner space comprises: a first exhaust port introducing the atmosphere of the inner space, a first exhaust line provided to exhaust an atmosphere introduced through the first exhaust port in a first direction and a second exhaust port introducing the atmosphere of the inner space, and a second exhaust line provided to exhaust an atmosphere introduced through the second exhaust port in a second direction. The controller controls the support unit so an exhaust direction inside of the first exhaust line and the second exhaust line become a forward direction with respect to a rotation direction of the substrate.

The present disclosure provides an apparatus for treating a substrate, comprising: a chemical discharge pipe; a cover configured to surround the chemical discharge pipe; a buffer disposed in a space between the chemical discharge pipe and the cover; a chemical supplier configured to supply a chemical to the chemical discharge pipe; a cleaning liquid supplier configured to supply a cleaning liquid via the cover; and a dry gas supplier configured to supply a dry gas via the cover, wherein the supplied cleaning liquid is sprayed by passing through the buffer via a space between the outside of the chemical discharge pipe and the inside of the cover to clean a tip of the chemical discharge pipe, and the supplied dry gas is sprayed by passing through the buffer via the space between the outside of the chemical discharge pipe and the inside of the cover to dry the tip of the chemical discharge pipe.

Provided is a substrate cleaning apparatus including a first support unit having a first support surface extending to a first radius and configured to support a substrate at a first cleaning area of the substrate, the first support unit configured to rotate around a central axis, a second support unit having a second support surface extending from a second radius larger than the first radius to a third radius larger than the second radius and configured to support the substrate at a second cleaning area, and configured to rotate around the central axis, a first nozzle unit configured to spray cleaning fluid onto the first cleaning area of the substrate when the substrate is supported by the second support unit, and a second nozzle unit configured to spray the cleaning fluid onto the second cleaning area of the substrate when the substrate is supported by the first support unit.

According to an embodiment of the present disclosure, a processing liquid supply nozzle includes a nozzle body, a nozzle tip member connected to a lower portion of the nozzle body, and a fastening member that is disposed between the nozzle body and the nozzle tip member to connect the nozzle body and the nozzle tip member to each other and introduces air into the nozzle body and the nozzle tip member.

Provided is a liquid supply unit for supplying a treatment liquid to a nozzle that discharges the treatment liquid to a substrate, the liquid supply unit including: a tank for storing the treatment liquid; a main circulation line for supplying the treatment liquid from an internal space of the tank to the nozzle or for recovering the treatment liquid to the internal space of the tank; a supply line connected to the main circulation line to supply the treatment liquid to the nozzle; and a heater module installed in the main circulation line and heating the treatment liquid flowing through the main circulation line to a predetermined temperature, in which the heater module includes: a pipe in which the treatment liquid flows and which is made of a quartz material; and a heating element provided on a surface of the pipe.

A wafer cleaning apparatus may include: a center chuck configured to adhere a center of one surface of a wafer and rotate around a center axis of the center chuck, that extends in a first direction, to rotate the wafer; a side chuck including at least one grip part configured to support an edge of the one surface of the wafer; a housing including a guide part configured to guide the side chuck to move horizontally in a second direction perpendicular to the first direction; and at least one nozzle part configured to spray a cleaning solution toward the one surface of the wafer.

A substrate processing method includes: receiving, by a transfer arm, a substrate from a batch processing section in which a plurality of substrates is collectively processed in a state where each of the plurality of substrates stands upright; disposing the substrate on a disposing unit including a pin, a first liquid film being formed on an upper surface of the substrate from a process in the batch processing section; supplying a pure water toward the upper surface of the substrate, thereby forming a second liquid film of the pure water on the upper surface of the substrate; stop supplying the pure water and maintaining the second liquid film on the upper surface of the substrate for a predetermined time, and transporting the substrate to a single wafer processing section in which the plurality of substrates are processed one by one in a horizontal state.

A substrate processing apparatus includes a holding unit, a liquid supply unit, a collection unit, a circulation path, a gas supply unit, and a control unit. The holding unit holds a substrate. The liquid supply unit supplies a processing liquid to a first main surface of the substrate held by the holding unit. The collection unit collects the processing liquid used for processing the substrate. The circulation path returns the processing liquid collected by the collection unit back to the liquid supply unit. The gas supply unit supplies a gas to a second main surface to the substrate held by the holding unit in a direction opposite to the first main surface. The control unit supplies the gas to the second main surface when supplying the processing liquid to be returned to the liquid supply unit by the circulation path to the first main surface.

Provided is an apparatus for treating a substrate. The substrate treating apparatus may include: a substrate support unit supporting a substrate; a nozzle supplying a liquid to the substrate supported on the substrate support unit; a home port in which the nozzle waits; and an electrostatic measurement member measuring an electrostatic amount of a liquid dispensed from the nozzle in the home port.

A photoresist coating apparatus includes a photoresist trap tank temporarily storing a photoresist. A photoresist supply pipe is connected to the photoresist trap tank. A pump is connected to the photoresist supply pipe. A photoresist pressing device is connected to the photoresist supply pipe at a rear of the pump. A photoresist circulation pipe is at a rear of the photoresist pressing device. The photoresist circulation pipe connects the photoresist supply pipe to the photoresist trap tank. A photoresist discharge pipe is connected to the photoresist supply pipe at a rear of the photoresist circulation pipe. A photoresist discharge valve is connected to the photoresist discharge pipe. A photoresist discharge nozzle is connected to the photoresist discharge valve.