A post CMP cleaning apparatus is provided. The post CMP cleaning apparatus includes a cleaning stage. The post CMP cleaning apparatus also includes a rotating platen disposed in the cleaning stage, and the rotating platen is configured to hold and rotate a semiconductor wafer. The post CMP cleaning apparatus further includes a vibrating device disposed over the rotating platen. The post CMP cleaning apparatus further includes a solution delivery module disposed near the vibrating device and configured to deliver a cleaning fluid to the semiconductor wafer. The vibrating device is configured to provide the cleaning fluid with a specific frequency which is at least greater than 100 MHz while the rotating platen is rotating the semiconductor wafer, so that particles on the semiconductor wafer are removed by the cleaning fluid.

The substrate treating apparatus includes a liquid supply unit for supplying a treating liquid to a substrate supported by a support unit, the liquid supply unit includes a nozzle member for discharging the treating liquid; and a driving member for moving the nozzle member to a standby position and a process position, the nozzle member includes a body having a buffer space and a discharge port configured to discharge the treating liquid; and a rotation member for changing the body between a first state and a second state by a rotation, the first state is a state at which a treating liquid filled in the buffer space is maintained so the treating liquid does not flow to the discharge port, and the second state is a state at which the treating liquid filled in the buffer space is discharged to an outside of the body through the discharge port.

A substrate cleaning apparatus includes a holder configured to hold a substrate; a circular ring-shaped body; grooves formed in a radial shape at an upper portion of the circular ring-shaped body, each groove having a bottom located on the circular ring-shaped body; a sliding surface which is a top surface of the circular ring-shaped body between the respective grooves, and configured to be slid on a bottom surface of the substrate; a supporting body configured to support and rotate the circular ring-shaped body in a circumferential direction; a cleaning liquid supply configured to allow a cleaning liquid to be absorbed into the circular ring-shaped body; and a relatively moving mechanism configured to move the substrate and the supporting body relative to each other in a state that the sliding surface being rotated and having absorbed the cleaning liquid presses the bottom surface of the substrate.

There is provided a separation method for an object by which the object held by a holding surface is separated from the holding surface. The separation method includes ejecting a liquid from the holding surface in a state in which the object is held by the holding surface, separating the holding surface and the object while keeping a state in which the liquid is in contact with both the holding surface and the object by causing the holding surface and the object to relatively move in such a direction as to separate from each other after the ejecting the liquid from the holding surface, and removing the liquid in contact with both the holding surface and the object after the separating the holding surface and the object.

The present disclosure relates to a substrate treatment apparatus including: a substrate-holding unit for holding and rotating a substrate; a treatment liquid feed unit for feeding treatment liquid to a top of the substrate; a rinsing liquid feed unit for feeding rinsing liquid to the top of the substrate; a drying liquid feed unit located to reciprocate horizontally above the substrate in such a way as to feed drying liquid to a drying liquid injection nozzle, in a state where the entire top region of the substrate is covered with the rinsing liquid, to allow the rinsing liquid to be replaced with the drying liquid; and a heating unit located under the substrate to heat the substrate.

A substrate processing apparatus includes a substrate holding portion, an immersion bath, a first supplying portion, and a moving mechanism. The substrate holding portion holds and rotates a substrate. The immersion bath stores a processing liquid, accommodates the substrate, and immerses the substrate in the processing liquid. The first supplying portion supplies the processing liquid to the immersion bath. The moving mechanism relatively moves the substrate holding portion and the immersion bath. The moving mechanism switches a state of the substrate between a non-immersion state in which the substrate is located outside the immersion bath and an immersion state in which the substrate is located inside the immersion bath and immersed in the processing liquid by moving the substrate holding portion or the immersion bath.

A system for processing a semiconductor wafer is provided. The system includes a processing tool. The system also includes gas handling housing having a gas inlet and a gas outlet. The system further includes an exhaust conduit fluidly communicating with the processing tool and the gas inlet of the gas handling housing. In addition, the system includes at least one first filtering assembly and at least one second filtering assembly. The first filtering assembly and the second filtering assembly are positioned in the gas handling housing and arranged in a series along a flowing path that extends from the gas inlet to the gas outlet of the gas handling housing. Each of the first filtering assembly and the second filtering assembly comprises a plurality of wire meshes stacked on top of another.

A substrate processing apparatus according to one embodiment includes a substrate holding part having a stage holding the substrate, a freezing solution supply part supplying the freezing solution to the substrate, a cooling part cooling the freezing solution to form a freezing film, and a thawing solution supply part having a nozzle extending in a first direction including a central part of the stage in a plan view, wherein an end and an other end opposite to the end of the nozzle in the first direction are located on an outer periphery outside of the central part, and the thawing solution supply part supplies a thawing solution having at least one of a different supply volume, temperature, or supply timing between the central part and the outer periphery to the substrate to thaw the freezing film.

A noncontact cleaning module for a chemical mechanical polishing system is presented. The non-contact cleaning module comprises a vacuum table disposed within a processing area, a nozzle positioning arm disposed within the processing area and having a cleaning nozzle array configured to provide a cleaning fluid jet spray, and a rinse manifold having a center rinse bar and one or more spray bars.

A cleaning brush includes a body having a truncated cone shape and having a first region configured to contact a central region of a wafer and a second region configured to contact an edge region of the wafer, a plurality of first nodules on the first region and protruding outwardly from the body, and a plurality of second nodules on the second region and protruding outwardly from the body, where a first ratio of a number of the plurality of first nodules to a surface area of the first region is smaller than a second ratio of a number of the plurality of second nodules to a surface area of the second region.