The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide includes a middle plate having a first side and a second side opposing the first side along a first direction. The first side and the second side are arcuate. The flow guide includes a first flange extending outwardly relative to a third side of the middle plate and outwardly relative to an outer face of the middle plate, and a second flange extending outwardly relative to a fourth side of the middle plate and outwardly relative to the outer face of the middle plate. The fourth side opposes the third side along a second direction that intersects the first direction. The flow guide includes a rectangular flow opening defined between the first flange and the second flange.

The present application relates to a device, to a method and to a computer program comprising instructions for processing of a surface of a substrate in a vacuum environment. The device includes: a fluid applicator set up to apply a fluid to a region of the surface; a manipulator set up to move the fluid and/or a particle influenced by the fluid at least to some degree on the surface of the substrate; and a positioner for relative positioning of the fluid applicator and/or of the manipulator with respect to the surface.

Disclosed is an apparatus for processing a substrate, the apparatus including: a cup having a processing space with an open top; a spin chuck for supporting the substrate within the processing space; a liquid supply nozzle for supplying a processing liquid to the substrate supported on the spin chuck; and a chuck diagnosis jig for diagnosing a state of the spin chuck, in which the spin chuck includes: a body coupled to a rotary shaft; a plurality of chuck pins installed on the body and supporting a side of the substrate during a process; and a chuck pin driver for moving the plurality of chuck pins between a support position in which the plurality of chuck pins is in contact with an end of the substrate placed on the spin chuck and a standby position in which the plurality of chuck pins is spaced apart from the end of the substrate placed on the spin chuck.

A wafer cleaning apparatus provided by the present invention comprises a rotary shaft, a chuck arranged on the top of the rotary shaft for retaining the wafer, a fixed shaft coaxially passed through the rotary shaft, and an upper end cover and a lower end cover that block the top and bottom of the fixed shaft respectively. Wherein, the fixed shaft is a hollow shaft with at least one circle of exhaust holes provided on the wall of the fixed shaft. The lower end cover is arranged with a gas inlet port, through which a protective gas is provided to the interior of the fixed shaft. The protective gas forms a positive pressure in the annular space between the fixed shaft and the rotary shaft through the at least one circle of exhaust holes. The present invention provides positive pressure protective gas to the spacing between the fixed shaft and the rotary shaft by opening exhaust holes on the wall of the fixed shaft. A gas seal is formed to prevent contaminants, such as particles and metals, generated in the bottom area of the rotary shaft from diffusing to the back side of the wafer through the annular space between the fixed shaft and the rotary shaft, thereby improving the cleanliness of the back side of the wafer after cleaning.

Provided is an apparatus for treating a substrate, which includes: a chamber having a treating space; a substrate support unit supporting and rotating a substrate in the treating space; a liquid supply unit supplying a chemical liquid to the substrate supported on the substrate support unit; a laser irradiation unit irradiating a laser to a bottom of the substrate supported on the substrate support unit; and a laser reflection unit coupled to the laser irradiation unit, and reflecting the laser irradiated and reflected to the bottom of the substrate, in which the laser reflection unit includes a reflection member reflecting the laser reflected from the substrate, and a driving member tilting the reflection member at a predetermined tilt angle.

According to the present disclosure, provided is a bowl receiving incident droplets and preventing the same from scattering, or causing the same to scatter downwardly, the bowl including: a main body surrounding a substrate support unit; a groove formed in a spiral shape in at least a portion of an inner surface of the main body; and a separation wall disposed between adjacent grooves in a vertical direction on the inner surface of the main body, wherein a thickness at a first position in the main body in which the groove is formed is greater than a thickness at a second position, lower than the first position.

A method of trimming a wafer includes securing the wafer on a top surface of a wafer chuck of a wafer edge trimming apparatus, directing a water jet at an edge of the wafer to form a plurality of cracks at uniform intervals along the edge of the wafer, inserting a wedge of a removal module into a first crack of the plurality of cracks, and rotating the wafer, where during the rotation of the wafer, the wedge expands the first crack of the plurality of cracks and removes material from the edge of the wafer.

A wafer cleaning apparatus according to the present disclosure includes a rotary table that supports and rotates a wafer so that the wafer rotates about a rotational axis, and an ultrasonic vibration device that vibrates a liquid film so that vibration having an ultrasonic frequency is generated in the liquid film formed on an upper surface of the wafer.

Embodiments of the disclosure include an apparatus and method of cleaning a substrate. The disclosure describes a method of cleaning a substrate includes supplying a gas at a gas temperature and a gas mass flow rate to a nozzle. The method also includes supplying a liquid at a liquid temperature and a liquid mass flow rate to the nozzle. The method also includes mixing the gas with the liquid in the nozzle to form a fluid mixture having a mixture temperature of not more than about 10 C. below the liquid temperature. The method also includes spraying the fluid mixture onto a surface of the substrate through an orifice in the nozzle.

The technical scope of the present disclosure provides a substrate processing apparatus including a first supply unit and a second supply unit each configured to spray a fluid onto a substrate seated on a substrate support unit, wherein the first supply unit includes a first supporter that is connected to a first support shaft configured to rotate so that the first supporter rotates integrally with the first support shaft; a connection member connected to the first supporter and bent by a first angle in a direction parallel to an upper surface of the substrate; and a first nozzle connected to the connecting member and bent at a predetermined angle toward the substrate, and the first supporter is configured to rotate by a second angle in a direction parallel to the upper surface of the substrate.