The inventive concept provides a substrate treating apparatus. According to the inventive concept, the substrate treating apparatus treats the substrate by supplying a treating liquid on a rotating substrate. The exhaust unit exhausting an atmosphere of an inner space comprises: a first exhaust port introducing the atmosphere of the inner space, a first exhaust line provided to exhaust an atmosphere introduced through the first exhaust port in a first direction and a second exhaust port introducing the atmosphere of the inner space, and a second exhaust line provided to exhaust an atmosphere introduced through the second exhaust port in a second direction. The controller controls the support unit so an exhaust direction inside of the first exhaust line and the second exhaust line become a forward direction with respect to a rotation direction of the substrate.

A substrate processing apparatus includes a gas-exhaust path to which a predetermined exhaust force is applied, and a plurality of substrate processing units configured to share the gas-exhaust path. Group correlations are predetermined as correlations in regard to a plurality of processing information pieces which correspond to each of the plurality of substrate processing units and represent work or a state relating to supply and exhaust of gas, and a management device that manages the substrate processing apparatus acquires a plurality of processing information pieces corresponding to each of the plurality of substrate processing units, and detects a state prior to a state in which the plurality of substrate processing apparatuses become abnormal, based on comparison information obtained when correlations in regard to a plurality of processing information pieces relating to exhaust of gas among a plurality of processing information pieces are compared with the group correlations.

A processing apparatus which processes a substrate is disclosed. The processing apparatus comprises: a plurality of processing chambers which process the substrate in an atmosphere of a desired processing gases; a plurality of tank units provided for each of the plurality of processing chambers, the plurality of tank units including a plurality of tanks configured for temporarily storing the processing gases; and one or more gas boxes supplying the processing gases to the processing chambers via the tank units. The substrate processing apparatus allows the number of gas boxes to be reduced.

A method for providing a substrate coating comprises transferring a substrate to an enclosed ink jet printing system; printing organic material in a deposition region of the substrate using the enclosed ink jet printing system, the deposition region comprising at least a portion of an active region of a light-emitting device on the substrate; loading the substrate with the organic material deposited thereon to an enclosed curing module; supporting the substrate in the enclosed curing module, the supporting the substrate comprising floating the substrate on a gas cushion established by a floatation support apparatus; and while supporting the substrate in the enclosed curing module, curing the organic material deposited on the substrate to form an organic film layer.

A wafer processing system is provided. In one aspect, the wafer processing system includes a chamber body arranged to support a plurality of process chambers. The chamber body defines at least a portion of a trench formed within the chamber body. The wafer processing system also includes transmission lines disposed within the trench to electrically couple an output of a power supply with respective ones of a plurality of antennas disposed within respective ones of the plurality of process chambers.

Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes: a first process chamber having a first treating space therein; a second process chamber having a second treating space therein; and an exhaust unit configured to exhaust atmospheres of the first treating space and the second treating space, in which the exhaust unit includes an integrated exhaust line in which a pressure reduction unit is installed, a first exhaust line configured to connect the first process chamber and a first point of the integrated exhaust line, a second exhaust line configured to connect the first process chamber and a second point of the integrated exhaust line, and an interference alleviation unit configured to alleviate exhaust interference between the first process chamber and the second process chamber.

An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.

A substrate processing apparatus includes a processing block and a transfer block. The processing block has an upper substrate holding portion, a moving mechanism, a processing cup row, and a raising/lowering mechanism. The upper substrate holding portion horizontally holds the substrate. The moving mechanism moves the upper substrate holding portion in a first direction that is a direction parallel to a direction in which the substrate moves between the transfer block and the processing block. The processing cup row includes a plurality of processing cup portions arranged in the first direction. The raising/lowering mechanism raises and lowers at least one of the upper substrate holding portion and the processing cup portion. The plurality of processing cup portions include a first processing cup portion. The first processing cup portion holds a processing liquid in contact with the substrate located inside the first processing cup portion and processes the substrate.

A substrate processing apparatus includes a processing block and a transfer block. The processing block has an upper substrate holding portion, a plurality of processing cup portions, a moving mechanism, and a raising/lowering mechanism. The upper substrate holding portion horizontally holds the substrate. The plurality of processing cup portions are arranged in an intersecting direction that intersects with a direction in which the substrate moves between the transfer block and the processing block. The moving mechanism moves the upper substrate holding portion in the intersecting direction. The raising/lowering mechanism raises and lowers the upper substrate holding portion. The plurality of processing cup portions include a first processing cup portion. The first processing cup portion holds a processing liquid in contact with the substrate located inside the first processing cup portion.

Described herein is a technique capable of preventing a constituent contained in an aluminum alloy from being vaporized and scattered when the aluminum alloy is used in a process vessel which is heated to a high temperature. According to one aspect thereof, there is provided a technique including a process chamber; a substrate support configured to support a substrate in the process chamber; and a heater configured to heat the substrate supported by the substrate support, wherein the substrate support is made of an aluminum alloy containing magnesium, and a surface of the substrate support is coated by a coating film of aluminum oxide containing magnesium oxide and being substantially free of magnesium.