The inventive concept provides a substrate treating apparatus. According to the inventive concept, the substrate treating apparatus treats the substrate by supplying a treating liquid on a rotating substrate. The exhaust unit exhausting an atmosphere of an inner space comprises: a first exhaust port introducing the atmosphere of the inner space, a first exhaust line provided to exhaust an atmosphere introduced through the first exhaust port in a first direction and a second exhaust port introducing the atmosphere of the inner space, and a second exhaust line provided to exhaust an atmosphere introduced through the second exhaust port in a second direction. The controller controls the support unit so an exhaust direction inside of the first exhaust line and the second exhaust line become a forward direction with respect to a rotation direction of the substrate.

An apparatus including a multi-station processing chamber with a top plate and a bottom portion encloses stations each including a pedestal assembly. A spindle centrally located between the stations is configured to rotate about a central axis, and is electrically connected to the bottom portion. An actuator controls movement of the spindle in the Z-direction. An indexer connected to the spindle rotates with the spindle, and includes extensions each configured to interface with a corresponding substrate for substrate transfer. An electrically conductive interface movably connected to the top plate provides an RF return path. Another actuator coupled to the grounding interface controls movement of the electrically conductive interface in the Z-direction. The electrically conductive interface moves downwards in the Z-direction to make contact with the indexer when each of the plurality of extensions is parked and the spindle is moved to a lower position during plasma processing.

A member for semiconductor manufacturing apparatus includes: a ceramic plate that has an upper surface including a wafer placement surface; a conductive base that is disposed on a lower surface of the ceramic plate; a first hole that extends through the ceramic plate; a second hole that extends through the conductive base; a porous plug that has an upper surface that is exposed from an upper opening of the first hole and a lower surface that is flush with or below an upper surface of the conductive base; an insulating pipe that has an upper surface that is located below the wafer placement surface and a lower surface that is located below the lower surface of the porous plug; and an integrally formed member that is obtained by integrally forming the porous plug and the insulating pipe.

An atomic layer deposition apparatus comprising a first single substrate process chamber, a second single substrate process chamber, and a transfer mechanism configured to transfer the substrate between the first and the second process chamber. Wherein both the first and second single substrate process chambers are bounded by a bottom part and a top part for accommodating a substantially flat substrate between them.

A holder temperature detection method which measures a temperature of a rotatable holder that holds a substrate is provided. The method comprises a step of irradiating a fluorescent body thermally mounted on the holder with a light pulse having a first wavelength, a step of detecting fluorescence having a second wavelength emitted from the fluorescent body due to the light pulse and a step of estimating the temperature of the holder based on the detected fluorescence.

Embodiments of the present disclosure relate to modular flow chamber kits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing. In one or more embodiments, a processing chamber includes a chamber body at least partially defining a processing volume. The chamber body includes a plurality of inject passages arranged in a plurality of flow levels, and one or more exhaust passages formed in the chamber body. The processing chamber includes one or more heat sources operable to heat the processing volume, a substrate support disposed in the processing volume, and a plate spaced from the substrate support. The substrate support and the plate are movable by at least one flow level of the plurality of flow levels to align the substrate support between one or more first inject passages of a first flow level and one or more second inject passages of a second flow level.

Apparatus and methods to process one or more wafers are described. A spatial deposition tool comprises a plurality of substrate support surfaces on a substrate support assembly and a plurality of spatially separated and isolated processing stations. The spatially separated isolated processing stations have independently controlled temperature, processing gas types, and gas flows. In some embodiments, the processing gases on one or multiple processing stations are activated using plasma sources. The operation of the spatial tool comprises rotating the substrate assembly in a first direction, and rotating the substrate assembly in a second direction, and repeating the rotations in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s).

A wafer cleaning apparatus provided by the present invention comprises a rotary shaft, a chuck arranged on the top of the rotary shaft for retaining the wafer, a fixed shaft coaxially passed through the rotary shaft, and an upper end cover and a lower end cover that block the top and bottom of the fixed shaft respectively. Wherein, the fixed shaft is a hollow shaft with at least one circle of exhaust holes provided on the wall of the fixed shaft. The lower end cover is arranged with a gas inlet port, through which a protective gas is provided to the interior of the fixed shaft. The protective gas forms a positive pressure in the annular space between the fixed shaft and the rotary shaft through the at least one circle of exhaust holes. The present invention provides positive pressure protective gas to the spacing between the fixed shaft and the rotary shaft by opening exhaust holes on the wall of the fixed shaft. A gas seal is formed to prevent contaminants, such as particles and metals, generated in the bottom area of the rotary shaft from diffusing to the back side of the wafer through the annular space between the fixed shaft and the rotary shaft, thereby improving the cleanliness of the back side of the wafer after cleaning.

Provided is an apparatus for treating a substrate, which includes: a chamber having a treating space; a substrate support unit supporting and rotating a substrate in the treating space; a liquid supply unit supplying a chemical liquid to the substrate supported on the substrate support unit; a laser irradiation unit irradiating a laser to a bottom of the substrate supported on the substrate support unit; and a laser reflection unit coupled to the laser irradiation unit, and reflecting the laser irradiated and reflected to the bottom of the substrate, in which the laser reflection unit includes a reflection member reflecting the laser reflected from the substrate, and a driving member tilting the reflection member at a predetermined tilt angle.

A method of etching a thin film includes: a first puddling operation of forming a first puddle of a chemical solution on a substrate by supplying and spreading the chemical solution on the substrate on which a thin film is formed; a first etching operation of partially etching the thin film using the chemical solution on the substrate; a first rinsing operation of supplying the chemical solution onto the substrate to rinse off the first puddle of the chemical solution and apply the chemical solution onto the substrate; a second puddling operation of forming a second puddle of the chemical solution on the substrate; a second etching operation of partially etching the thin film; and a second rinsing operation of supplying the chemical solution onto the substrate to rinse off the second puddle of the chemical solution on the substrate and apply the chemical solution on to the substrate.