A stacked semiconductor device and methods for producing the same are disclosed here. A semiconductor device can include a first semiconductor die having a first backside passivation layer and a second semiconductor die having a second backside passivation layer. The first backside passivation layer interfaces to the second backside passivation layer to form a stacked semiconductor assembly and provide one or more communicative couplings between the first and second semiconductor dies. A method of forming a stacked semiconductor assembly includes aligning a first plurality of pads disposed in a first backside passivation layer of a first semiconductor die with a second plurality of pads disposed in a second backside passivation layer of a second semiconductor die. The method further includes bonding the first backside passivation layer to the second backside passivation layer to communicatively couple the first plurality of pads to the second plurality of pads.

A semiconductor device and a method for fabricating the same are disclosed. The semiconductor device includes a first wafer structure and at least one die stack layer stacked on a second side of the first wafer structure. The die stack has first test pad and second test pad, which can be used to test and screen the die in the die stack and the die stack, contributing to increased yield of the semiconductor device. Additionally, metal pad may be formed on a first side of the first wafer structure before the die stack is stacked on the first wafer structure, avoiding warpage or other distortion possibly otherwise caused by high-temperature treatment if they are formed after the die stack is stacked. This facilitates stacking of more dies and/or wafers together. The semiconductor device is obtainable according to the method.

A wafer stacking method and a wafer stack structure are disclosed. In the wafer stacking method, first and second wafer structures are formed and then stacked and bonded. Prior to the stacking and bonding of the first and second wafer structures, metal pad is pre-formed on one side of the first wafer structure. In this way, it is unnecessary to form the metal pad after the first and second wafer structures are stacked and bonded, avoiding wafer warpage distortion, which may occur in high-temperature treatment involved in the formation of the metal pad. Thus, the risks of layer and/or film fracture and alarming of processing equipment in subsequent processes are reduced, and more wafers are allowed to be stacked by wafer-level stacking. The wafer stack structure is obtainable according to the wafer stacking method.

A microelectronic device includes a first microelectronic device structure and a second microelectronic device structure vertically underlying the first microelectronic device structure. The first microelectronic device structure includes a stack structure and a first insulative material vertically underlying the stack structure. The stack structure includes tiers vertically stacked relative to one another and respectively including a first semiconductor material, and a second semiconductor material vertically neighboring the first semiconductor material. The second microelectronic device structure includes a second insulative material and a base semiconductor structure. The second insulative material is bonded to the first insulative material of the first microelectronic device structure. The base semiconductor structure is at least partially vertically adjacent to and in physical contact with the second insulative material. Related methods, memory devices, and electronic systems are also described.

A microelectronic device includes a memory array region, an interconnect region, and a control logic region. The memory array region includes a stack structure including tiers each including conductive material and insulative material vertically neighboring the conductive material and conductive routing overlying the stack structure. The interconnect region underlies the memory array region and includes connected bond pads. The control logic region underlies the interconnect region and comprises control logic devices to effectuate control operations for the microelectronic device. The microelectronic device may also include a conductive loop assembly extending, in a looped path, through each of the memory array region, the interconnect region, and the control logic region.

A semiconductor device includes a semiconductor die including a central region and an outer region surrounding the central region, a semiconductor integrated circuit across a plurality of sub regions of the central region, an outer crack detection structure in the outer region along an edge of the outer region and divided into a plurality of outer conduction segments, a central crack detection structure crossing the central region and divided into a plurality of central conduction segments, a plurality of first path selection circuits each connected to at least one of the plurality of outer conduction segments and at least one of the plurality of central conduction segments, and a second path selection circuit connected between the plurality of central conduction segments.

Some embodiments relate to an integrated device, including: a substrate including a first doped region; an interconnect structure on the substrate and including a plurality of wire levels and via levels; a first lower contact layer extending between the substrate and the interconnect structure; a first bonding layer over the interconnect structure; a first upper contact layer extending between the interconnect structure and the first bonding layer; a capacitor in the interconnect structure, wherein the capacitor extends above an uppermost wire level of the plurality of wire levels and via levels.

A semiconductor device may include a semiconductor substrate including a horizontal portion and a vertical portion protruding upward from the horizontal portion, a bit line on the semiconductor substrate and extending in a first direction parallel to a bottom surface of the semiconductor substrate, a word line on the bit line and extending in a second direction parallel to the bottom surface of the semiconductor substrate that is different from the first direction, a semiconductor pattern on the vertical portion of the semiconductor substrate and extending in a third direction perpendicular to the bottom surface of the semiconductor substrate, and a metal silicide pattern between the semiconductor pattern and the bit line. The semiconductor pattern may include a source/drain region adjacent to the bit line and a channel region on the source/drain region, and the metal silicide pattern may be in contact with the source/drain region and the bit line.

A semiconductor device includes: a conductive layer; a stack structure including gate electrodes spaced apart from each other and sequentially stacked in a first direction, in a first region and a second region, a first separation region and a second separation region penetrating through the stack structure, and extending in a second direction, perpendicular to the first direction, and spaced apart from each other in a third direction, perpendicular to the first direction and the second direction; channel structures respectively including a channel layer and penetrating through the stack structure in the first direction, in the first region; and contact plugs extending by different lengths by penetrating through at least one of the gate electrodes of the stack structure, electrically connected to each of the gate electrodes, and spaced apart from each other, in the second region.

A microelectronic device includes a first microelectronic device structure, a second microelectronic device structure bonded to the first microelectronic device structure, and cruciform contact structures at a bonding interface of the first microelectronic device structure and the second microelectronic device structure. The cruciform contact structures respectively include a first conductive bar and a second conductive bar bonded to the first conductive bar. The first conductive bar has a first rectangular shape, a major horizontal dimension of the first conductive bar oriented in a first direction. The second conductive bar has a second rectangular shape, a major horizontal dimension of the second conductive bar oriented in a second direction orthogonal to the first direction. Related methods and electronic systems are also described.