A structure including stacked substrates, a first semiconductor die, a second semiconductor die, and an insulating encapsulation is provided. The first semiconductor die is disposed over the stacked substrates. The second semiconductor die is stacked over the first semiconductor die. The insulating encapsulation includes a first encapsulation portion encapsulating the first semiconductor die and a second encapsulation portion encapsulating the second semiconductor die.

Integrated circuit assemblies can be fabricated on a wafer scale, wherein a base template, having a plurality of openings, may cover a base substrate, such as a die wafer, wherein the base substrate has a plurality of first integrated circuit devices formed therein and wherein at least one second integrated circuit device is electrically attached to a corresponding first integrated circuit device through a respective opening in the base template. Thus, when the base substrate and base template are singulated into individual integrated circuit assemblies, the individual integrated circuit assemblies will each have a first integrated circuit that is edge aligned to a singulated portion of the base template. The singulated portion of the base template can provide an improved thermal path, mechanical strength, and/or electrical paths for the individual integrated circuit assemblies.

A 3D device including: a first level including first transistors and a first interconnect; a second level including second transistors, the second level overlaying the first level; and at least four electronic circuit units (ECUs), where each of the ECUs include a first circuit, the first circuit including a portion of the first transistors, where each of the ECUs includes a second circuit, the second circuit including a portion of the second transistors, where each of the ECUs includes a first vertical bus, where the first vertical bus provides electrical connections between the first circuit and the second circuit, where each of the ECUs includes at least one processor and at least one memory array, where the second level is bonded to the first level, and where the bonded includes oxide to oxide bonding regions and metal to metal bonding regions.

A semiconductor device includes cell lower conductive lines and peripheral lower conductive lines on a substrate, lower electrode contacts on the cell lower conductive lines, peripheral conductive contacts on the peripheral lower conductive lines, variable resistance patterns horizontally spaced apart from each other on the lower electrode contacts. The lower electrode contacts are respectively connected to the variable resistance patterns. Peripheral conductive lines are horizontally spaced apart from the variable resistance patterns on the peripheral conductive contacts. The peripheral conductive contacts are connected to the peripheral conductive lines. The cell and peripheral lower conductive lines are connected to the lower electrode contacts and the peripheral conductive contacts, respectively. The cell and peripheral lower conductive lines are at the same height. A pitch of the cell lower conductive lines directly adjacent to each other is greater than a pitch of the peripheral lower conductive lines directly adjacent to each other.

A semiconductor device may include a peripheral circuit portion, a memory cell array disposed over the peripheral circuit portion and including a vertical conductive line, a bonding pad structure between the peripheral circuit portion and the memory cell array, a dielectric pad layer configured to cover the top of the vertical conductive line of the memory cell array, and a higher-level pad that is coupled to the vertical conductive line through the dielectric pad layer.

A stacked integrated circuit includes a first chip including a first through via set and a second through via set that are disposed to be symmetrical to each other in relation to a first rotating axis and including a first input and output (IO) circuit and a second IO circuit that are disposed to be asymmetrical to each other in relation to the first rotating axis and a second chip including a third through via set and a fourth through via set that are disposed to be symmetrical to each other in relation to a second rotating axis and including a third IO circuit and a fourth IO circuit that are disposed to be asymmetrical to each other in relation to the second rotating axis, the second chip being rotated around the second rotating axis and stacked on the first chip.

Methods of fabricating a semiconductor device include securing a first die to a second die. The first die includes a first clock signal path from a clock source to a first load and passing through a tap point electrically connected to a clock output. The second die includes a second clock signal path from a clock input to a second load. The methods also include connecting the clock input of the second die to the clock output of the first die. A first divergence between the tap point and the first load is substantially the same as a second divergence from the tap point through the clock input and the clock output to the second load. Various other methods, devices, and systems are also disclosed.

Disclosed is a stacked electronic device including a first and second bonded structure. The first bonded structure includes a first and second semiconductor element, each having a semiconductor region, a front side on one side of the semiconductor region including active circuitry, and a back side opposite the front side. The front side of the first semiconductor element is bonded and electrically connected to the front side of the second semiconductor element. The second bonded structure includes a third and fourth semiconductor element, which can include similar components to the first and second semiconductor elements. The front side of the third semiconductor element is bonded and electrically connected to the front side of the fourth semiconductor element. The back side of the second semiconductor element is bonded and electrically connected to the back side of the third semiconductor element.

A semiconductor device includes a first die including a first stack of layers in a first region on a backside of the first die and a second stack of layers in a second region on the backside of the first die. The first stack of layers has a smaller number of different layers than the second stack of layers. A contact structure is formed in the first region on the backside of the first die. The contact structure extends through the first stack of layers and is configured to conductively connect a first conductive structure on a face side of the first die with a second conductive structure on the backside of the first die. The face side is opposite to the backside.

An image sensor includes a stack structure including an active pixel region of pixels, and a pad region. The stack structure further includes a first substrate including a photoelectric conversion region and a floating diffusion region, a first semiconductor substrate, a first front structure arranged on a first surface of the first semiconductor substrate, a second substrate attached to the first front structure and including pixel gates, a second semiconductor substrate, and a second front structure, a third substrate attached to the second substrate and including a logic transistor for driving the pixels, and a pad arranged in the pad region. A side surface and a bottom surface of the pad are surrounded by the second front structure, and at least a portion of a top surface of the pad is exposed through a pad opening penetrating the first substrate and extending into the second substrate.