Patent classifications
H10W72/851
Semiconductor package and package-on-package having different wiring insulating layers surrounding differential signal wiring layers
A semiconductor package is provided. The semiconductor package includes: a lower equipotential plate provided in a lower wiring layer; an upper equipotential plate provided in an upper wiring layer; a pair of differential signal wiring lines provided in a signal wiring layer that is between the lower equipotential plate and the upper equipotential plate, wherein the pair of differential signal wiring lines includes a first differential signal wiring line and a second differential signal wiring line which are spaced apart from each other and extend in parallel; and a wiring insulating layer surrounding the pair of differential signal wiring lines, and filling between the signal wiring layer, the lower wiring layer, and the upper wiring layer. The wiring insulating layer includes a first wiring insulating layer surrounding the pair of differential signal wiring lines, and a second wiring insulating layer, and the first wiring insulating layer and the second wiring insulating layer include different materials.
Electronic package and manufacturing method thereof
An electronic package and a manufacturing method thereof are provided, in which a cover is disposed on a carrier structure having an electronic element, and the electronic element is covered by the cover. A magnetic conductive member is arranged between the cover and the electronic element, and an air gap is formed between the magnetic conductive member and the cover to enhance the shielding effect of the electronic package.
Semiconductor package
A semiconductor package includes a semiconductor chip including a semiconductor substrate having an active layer, ground chip pads on the semiconductor substrate, and signal chip pads on the semiconductor substrate and a package substrate supporting the semiconductor chip, the package substrate including a substrate insulating layer, a plurality of signal line patterns extending in the substrate insulating layer and electrically connected to the signal chip pads, and a plurality of ground line patterns extending in the substrate insulating layer at a same level as a level of the plurality of signal line patterns and electrically connected to the ground chip pads. At least one of the plurality of ground line patterns extends between the plurality of signal line patterns.
Package structure
A package structure is provided. The package structure includes a first interconnect structure formed over a first substrate. The package structure also includes a second interconnect structure formed below a second substrate. The package structure further includes a bonding structure between the first interconnect structure and the second interconnect structure. In addition, the bonding structure includes a first intermetallic compound (IMC) and a second intermetallic compound (IMC). The bonding structure also includes an underfill layer surrounding the bonding structure. A width of the first IMC is greater than a width of the second IMC, and the underfill layer covers a sidewall of the first IMC and a sidewall of the second IMC.
Image sensor packaging structures and related methods
Implementations of an image sensor package may include an image sensor die including at least one bond pad thereon; a bond wire wirebonded to the at least one bond pad; and an optically transmissive lid coupled to the image sensor die with an optically opaque film adhesive over the at least one bond pad. The bond wire may extend through the optically opaque film adhesive to the at least one bond pad.
Semiconductor device and method of manufacturing semiconductor device
An object is to provide a technique capable of reducing stress in the entire semiconductor device. The semiconductor device includes a plurality of sub-modules including a first sealing member, an insulating substrate provided with a first circuit pattern electrically connected to at least one of the conductive plates of the plurality of sub-modules, connection members electrically connected to at least one of the conductive pieces of the plurality of sub-modules, and a second sealing member having lower hardness than the first sealing member, which seals the plurality of sub-modules, the insulating substrate, and the connection members.
Integrated circuit chip and semiconductor package
An integrated circuit chip includes; a package substrate including a first signal ball, a first semiconductor chip on the package substrate, a second semiconductor chip on the first semiconductor chip, a first bump disposed between the package substrate and the first semiconductor chip and electrically connected to the first signal ball, and a second bump disposed between the first semiconductor chip and the second semiconductor chip and electrically connected to the first signal ball, wherein during a first mode, the first signal ball receives a signal from the first semiconductor chip through the first bump and receives a signal from the second semiconductor chip through the second bump.
Electronic package and electronic structure thereof
An electronic package is provided in which an electronic structure is bonded onto a carrier structure via a plurality of conductive elements, where each of the conductive elements is connected to a single contact of the electronic structure via a plurality of conductive pillars. Therefore, when one of the conductive pillars fails, each of the conductive elements can still be electrically connected to the contact via the other of the conductive pillars to increase electrical conductivity.
Semiconductor device package with vertically stacked passive component
In a described example, an apparatus includes: a package substrate with conductive leads; a semiconductor die mounted to the package substrate, the semiconductor die having a first thickness; electrical connections coupling bond pads on the semiconductor die to conductive leads on the package substrate; brackets attached to the package substrate spaced from the semiconductor die and extending away from the package substrate to a distance from the package substrate that is greater than the first thickness of the semiconductor die; and mold compound covering the package substrate, the semiconductor die, the brackets, and the semiconductor die to form a semiconductor device package having a board side surface and a top surface opposite the board side surface, and having portions of the brackets exposed from the mold compound on the top surface of the semiconductor device package to form mounts for a passive component.
Power semiconductor device and power conversion device
A power semiconductor device according to the present invention is provided with: a first circuit body constituting an upper arm of an inverter circuit for converting a DC current into an AC current; a second circuit body constituting a lower arm of the inverter circuit; and a circuit board that has therein a through-hole in which the first circuit body and the second circuit body are disposed and that has an intermediate board between the first circuit body and the second circuit body. The intermediate board has an AC wiring pattern for transmitting the AC current, and the first circuit body and the second circuit body are connected to the AC wiring pattern so as to be in surface contact with the AC wiring pattern.