A semiconductor device semiconductor chip mounted to a leadframe that includes an electrically conductive pad. An electrically conductive clip is arranged in a bridge-like position between the semiconductor chip and the electrically conductive pad. The electrically conductive clip is soldered to the semiconductor chip and to the electrically conductive pad via soldering material applied at coupling surfaces facing towards the semiconductor chip and the electrically conductive pad. The device further includes a pair of complementary positioning formations formed by a cavity in the electrically conductive clip and a protrusion (such as a stud bump or a stack of stud bumps) formed in the electrically conductive pad. The complementary positioning formations are mutually engaged to retain the electrically conductive clip in the bridge-like position to avoid displacement during soldering.

A chip package structure and a method for fabricating the same are provided. The chip package structure includes a conductive substrate, a chip, a molding layer and a package cover. The conductive substrate has first and second board surfaces opposite to each other, and a die-bonding region is defined on the first board surface. The chip is disposed on the first board and located in the die-bonding region, and is electrically connected to the conductive substrate. The molding layer is disposed on the first board surface and surrounds the die-bonding region and the chip. The package cover is disposed on the molding layer, and the package cover, the molding layer and the conductive substrate jointly define an enclosed space surrounding the chip. Two of the conductive substrate, the molding layer and the package cover are connected to each other through a mortise-tenon joint structure.

An electronic device may include a display having a monolithic array of light-emitting diodes mounted to a surface of a substrate layer. The diodes may include contact pads. Driver circuitry may independently drive each of the diodes in the array using drive signals. The driver circuitry may be formed on a driver integrated circuit. Bond pads may be formed on a surface of the integrated circuit. Copper pillars may be grown on the bond pads. In another suitable arrangement, the driver circuitry may be formed on a driver printed circuit board coupled to an interposer by a flexible printed circuit. The interposer may include bond pads and copper pillars grown on the bond pads. The contact pads on each of the diodes may be simultaneously bonded to the copper pillars. A surface of the substrate layer may be patterned to form light redirecting elements if desired.

A semiconductor structure includes an interposer including redistribution wiring interconnects and redistribution insulating layers; a first semiconductor die attached to the interposer through a first array of solder material portions; and a second semiconductor die attached to the interposer through a second array of solder material portions. The interposer includes at least one inductor structure located between an area of the first array of solder material portions and an area of the second array of solder material portions in a plan view and laterally encloses a respective area in the plan view.

A semiconductor structure includes a functional die, a dummy die, a conductive feature, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The conductive feature is electrically connected to the functional die. The seal ring is disposed aside the conductive feature. The alignment mark is disposed between the seal ring and the conductive feature, and the alignment mark is electrically isolated from the dummy die, the conductive feature and the seal ring.

A semiconductor package includes a first semiconductor chip having a first surface and a second surface. First connection pads are adjacent to the first surface. A second semiconductor chip has a lower surface facing the first surface of the first semiconductor chip and includes second connection pads, Connection bumps contact the first connection pads and the second connection pads between the first semiconductor chip and the second semiconductor chip. An adhesive layer is interposed between the first semiconductor chip and the second semiconductor chip to at least partially surround the connection bumps. The adhesive layer includes a protruding portion protruding from a side surface of the second semiconductor chip. A barrier structure covers a portion of the first connection pads, partially overlapping the second semiconductor chip on the first surface, and contacting the protruding portion of the adhesive layer.

Provided are a semiconductor structure and a method of forming the same. The semiconductor structure includes: a substrate, an under bump metallurgy (UBM) structure, and a solder. The UBM structure is disposed over the substrate. The UBM structure includes a first metal layer; a second metal layer disposed on the first metal layer; and a third metal layer disposed on the second metal layer. A sidewall of the first metal layer is substantially aligned with a sidewall of the second metal layer, and a sidewall of the third metal layer is laterally offset inwardly from the sidewalls of the first and second metal layers. The solder is disposed on the third metal layer.

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first plurality of semiconductor fins having a longest dimension along a first direction. Adjacent individual semiconductor fins of the first plurality of semiconductor fins are spaced apart from one another by a first amount in a second direction orthogonal to the first direction. A second plurality of semiconductor fins has a longest dimension along the first direction. Adjacent individual semiconductor fins of the second plurality of semiconductor fins are spaced apart from one another by the first amount in the second direction, and closest semiconductor fins of the first plurality of semiconductor fins and the second plurality of semiconductor fins are spaced apart by a second amount in the second direction.

A semiconductor package includes a package substrate including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness, and an interposer module mounted on the upper surface layer of the package substrate in the second surface area. The semiconductor package may also include an interposer including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness. The semiconductor package may also include an printed circuit board substrate including an upper surface layer including a first surface area having a first surface roughness, and a second surface area having a second surface roughness less than the first surface roughness.

Disclosed are semiconductor packages and their fabricating methods. A semiconductor package includes a first semiconductor die, a second semiconductor die on the first semiconductor die, an underfill layer between the first semiconductor die and the second semiconductor die, and a mold layer on a top surface of the first semiconductor die and a lateral surface of the second semiconductor die. The first semiconductor die includes a first semiconductor substrate and an edge conductive pad on a rear surface of the first semiconductor substrate. One portion of the edge conductive pad overlaps the second semiconductor die. Another portion of the edge conductive pad is covered with the mold layer.