An electronic module is provided that suppresses mispositioning of an internal connection terminal and a chip spacer, suppresses rotation of the chip spacer when solder is melted, and improves desired self-alignment effects. The electronic module includes an electronic element, at least one conductive internal connection terminal that is electrically connected to the electronic element, and a chip spacer that is formed between the electronic element and a lower end surface of the internal connection terminal. The chip spacer is bonded to the electronic element via a conductive bonding material, and at least one recess that has a larger diameter than the internal connection terminal is formed in an upper surface of the chip spacer.

In an embodiment of the present inventive concept, a high bandwidth memory includes a base die, and a semiconductor stack disposed on the base die, the semiconductor stack comprising a plurality of underfill members and a plurality of memory dies that are alternately stacked. Each of the plurality of underfill members includes first sides, each of the plurality of memory dies includes second sides, and each of the first sides is recessed from a corresponding second side.

A semiconductor package comprises a base chip, a plurality of semiconductor chips sequentially stacked on the base chip, bump structures between the base chip and a lowermost semiconductor chip of the plurality of semiconductor chips, and between the plurality of semiconductor chips, adhesive layers surrounding the bump structures between the base chip and the lowermost semiconductor chip of the plurality of semiconductor chips and between the plurality of semiconductor chips. The adhesive layers have a width equal to or less than a width of each of the plurality of semiconductor chips in a direction parallel to an upper surface of the base chip. At least one of the adhesive layers comprises a polymer resin having a hydrophilic group, a photosensitive compound physically bonded to the polymer resin, and an ionic material crosslinking the polymer resin.

A display includes a wiring pad and a dummy pad on a first substrate. A first planarization layer is disposed on the wiring pad and the dummy pad. A first pad electrode layer is connected to the wiring pad and a second pad electrode layer is connected to the dummy pad. The first and second pad electrode layers are disposed on the first planarization layer. A first insulating layer covers the first and second pad electrode layers. A first pad electrode upper layer is disposed on the first pad electrode layer. A second pad electrode upper layer is disposed on the second pad electrode layer. The wiring pad, the first pad electrode layer, and the first pad electrode upper layer are electrically connected. The dummy pad, the second pad electrode layer, and the second pad electrode upper layer are electrically connected.

A semiconductor package includes: a package substrate, a first chip on the package substrate, a second chip on the package substrate and spaced apart from the first chip in a horizontal direction, a third chip having a film adhesive layer attached to a lower surface thereof, and attached to the first chip and the second chip, a first fillet adhesive layer surrounding a side surface of the first chip and in contact with a portion of the lower surface of the third chip, and a second fillet adhesive layer between the second chip and the third chip. A vertical level of an upper surface of the first chip is higher than a vertical level of an upper surface of the second chip, and the second fillet adhesive layer protrudes from the upper surface of the second chip in the horizontal direction.

According to one embodiment, a semiconductor device includes: a circuit board; a first semiconductor chip mounted on a face of the circuit board; a resin film covering the first semiconductor chip; and a second semiconductor chip having a chip area larger than a chip area of the first semiconductor chip, the second semiconductor chip being stuck to an upper face of the resin film and mounted on the circuit board. The resin film entirely fits within an inner region of a bottom face of the second semiconductor chip when viewed in a stacking direction of the first and second semiconductor chips.

A semiconductor package includes a first semiconductor chip including a first semiconductor substrate, and a first upper pad arranged on an upper surface of the first semiconductor substrate, a first polymer layer arranged on the upper surface of the first semiconductor substrate, a second semiconductor chip mounted on the first semiconductor chip, the second semiconductor chip including a second semiconductor substrate and a second lower pad arranged under a lower surface of the second semiconductor substrate, wherein the first polymer layer has a horizontal width in a direction crossing the first polymer layer in a center region of the second semiconductor chip, as a first length, and has a horizontal width in a direction crossing two corner regions of the first polymer layer in corner regions of the second semiconductor chip, as a second length, wherein the second length is greater than the first length.

A semiconductor package includes a leadframe having a die pad and a plurality of pins disposed around the die pad, a metal interposer attached to a top surface of the die pad, and a semiconductor die attached to a top surface of the metal interposer. A plurality of bond wires with same function is bonded to the metal interposer. The die pad, the metal interposer and the semiconductor die are stacked in layers so as to form a pyramidal stack structure.

A semiconductor device assembly is provided. The assembly includes a package substrate which has a tunneled interconnect structure. The tunneled interconnect structure has a solder-wettable surface, an interior cavity, and at least one microvia extending from the surface to the cavity. The assembly further includes a semiconductor device disposed over the substrate and a solder joint coupling the device and the substrate. The joint comprises the solder between the semiconductor device and the interconnect structure, which includes the solder on the surface, the solder in the microvia, and the solder within the interior cavity.

A display device with high operation stability is provided. The display device comprises a first substrate, a second substrate, and a conductive fluid. The first substrate has a first insulating plate and a switching element. The switching element is formed on the first insulating plate. The second substrate has a second insulating plate, a first electrode, a light-emitting layer, and a second electrode. The second insulating plate faces the first insulating plate. The first electrode is formed on the second insulating plate. The light-emitting layer is formed on the first electrode. The second electrode is formed on the light-emitting layer. The second electrode faces the switching element. The conductive fluid is disposed between the first substrate and the second substrate. The conductive fluid electrically connects the switching element and the second electrode.