According to one embodiment, a semiconductor chip includes a first electrode, a semiconductor layer, a second electrode, a third electrode, and a metallic layer. The semiconductor layer includes a first portion, a second portion, and a third portion that is located between the first portion and the second portion. The semiconductor layer is provided on a first side of the first electrode in a first direction. The second electrode is over the first portion in the first direction. The third electrode is over the second portion in the first direction. The metallic layer is provided on a second side of the first electrode and is under the third portion in the first direction.

A semiconductor package includes: a lower redistribution structure including a lower redistribution layer; external connection bumps below the lower redistribution structure; a lower chip structure on the lower redistribution structure; an encapsulant at least partially encapsulating the lower chip structure; an upper encapsulating layer on the encapsulant; an adhesive layer on an upper surface of the lower chip structure; a plurality of posts extending through the encapsulant and electrically connected to the lower redistribution layer; an upper chip structure on the upper encapsulating layer and electrically connected to the plurality of posts; a heat dissipation member on one side of the upper chip structure and overlapping the lower chip structure in a vertical direction; and a heat transfer material layer extending through the upper encapsulating layer and the adhesive layer and disposed between the heat dissipation member and the lower chip structure.

A chip package assembly includes a first high-power chip, a second low-power chip, a thermal cooling device and a heterogeneous thermal interface material (HTIM). The thermal cooling device may overlie the first chip and the second chip. The HTIM includes a first thermal interface material (TIM) and a second TIM. The first TIM overlies the first chip, and the second TIM overlies the second chip. The first TIM includes a material that has a first thermal conductivity and a first modulus of elasticity. The first TIM can reflow when the first die reaches a first TIM reflow temperature. The second TIM comprises at least a polymer material. The second TIM has a second modulus of elasticity that is greater than the first modulus of elasticity and a second thermal conductivity that is less than the first thermal conductivity.

A semiconductor device package and a method of manufacturing a semiconductor device package are provided. The semiconductor device package includes a carrier, a first component, a second component, and a protective element. The first component and the second component are arranged side by side in a first direction over the carrier. The protective element is disposed over a top surface of the carrier and extending from space under the first component toward a space under the second component. The protective element includes a first portion and a second portion protruded oppositely from edges of the first component by different distances, and the first portion and the second portion are arranged in a second direction angled with the first direction.

A semiconductor package includes a die stack including a first semiconductor die having a first interconnect structure, and a second semiconductor die having a second interconnect structure direct bonding to the first interconnect structure of the first semiconductor die. The second interconnect structure includes connecting pads disposed in a peripheral region around the first semiconductor die. First connecting elements are disposed on the connecting pads, respectively. A substrate includes second connecting elements on a mounting surface of the substrate. The first connecting elements are electrically connected to the second connecting elements through an anisotropic conductive structure.

A semiconductor package includes a package substrate having an upper surface, a lower surface opposite to the upper surface, and a receiving groove that extends from the upper surface, toward the lower surface, by a predetermined depth; a first semiconductor chip in the receiving groove and protruding from the upper surface of the package substrate to have a predetermined height from the upper surface of the package substrate; an underfill member in the receiving groove and between the first semiconductor chip and an inner surface of the receiving groove; a plurality of second semiconductor chips sequentially stacked on the first semiconductor chip; and a molding member on the package substrate and covering the first semiconductor chip and the plurality of second semiconductor chips.

A semiconductor package comprises a base substrate, a first semiconductor chip on the base substrate, a first dam structure which overlaps a corner of the first semiconductor chip from a plan view and is placed on the base substrate and a first fillet layer which is placed vertically between the base substrate and the first semiconductor chip, and vertically between the first dam structure and the first semiconductor chip.

A semiconductor package includes a package substrate including an upper pad on an upper surface of the package substrate, a first chip structure including a plurality of first chips offset-stacked in a first direction, a controller chip on the package substrate and apart from the first chip structure in a horizontal direction, a chip connection bump between the package substrate and the controller chip, and an underfill material layer covering the chip connection bump, wherein a side surface of the underfill material layer is perpendicular to the package substrate.

A semiconductor package including an interposer substrate, first to third semiconductor chips on the interposer substrate to face each other, an underfill part between each of the first to third semiconductor chips and the interposer substrate, a first side-fill part extending upward from a lower end of side walls of the first to third semiconductor chips, and a second side-fill part between the side walls of the first to third semiconductor chips and extending from the first side-fill part to an upper end of the side walls of the first to third semiconductor chips may be provided.

An electronic module is provided that suppresses mispositioning of an internal connection terminal and a chip spacer, suppresses rotation of the chip spacer when solder is melted, and improves desired self-alignment effects. The electronic module includes an electronic element, at least one conductive internal connection terminal that is electrically connected to the electronic element, and a chip spacer that is formed between the electronic element and a lower end surface of the internal connection terminal. The chip spacer is bonded to the electronic element via a conductive bonding material, and at least one recess that has a larger diameter than the internal connection terminal is formed in an upper surface of the chip spacer.