A pre-molded leadframe includes a laminar structure having empty spaces therein and a first thickness with a die pad having opposed first and second die pad surfaces. Insulating pre-mold material is molded onto the laminar structure. The pre-mold material penetrates the empty spaces and provides a laminar pre-molded substrate having the first thickness with the first die pad surface left exposed. The die pad has a second thickness that is less than the first thickness. One or more pillar formations are provided protruding from the second die pad surface to a height equal to a difference between the first and second thicknesses. With the laminar structure clamped between surfaces of a mold, the first die pad surface and pillar formations abut against the mold surfaces. The die pad is thus effectively clamped between the clamping surfaces countering undesired flashing of the pre-mold material over the first die pad surface.

A switching module includes at least one substrate, at least one switching element, at least one control loop, a first power part and a second power part. The at least one switching element is disposed on the at least one substrate. The at least one control loop is connected with the corresponding switching element. The first power part is connected with the corresponding switching element. The second power part is connected with the corresponding switching element. A direction of a first current flowing through the first power part and a direction of a second current flowing through the second power part are identical. A projection of the first power part on a reference plane and a projection of the second power part on the reference plane are located at two opposite sides of a projection of the control loop on the reference plane.

A semiconductor module, including a semiconductor chip, a sealed main body portion sealing the semiconductor chip and having a pair of attachment holes penetrating therethrough, a heat dissipation plate in contact with the sealed main body portion. The heat dissipation plate is positioned between the attachment holes in a plan view of the semiconductor module. The semiconductor module further includes a pair of rear surface supporting portions and/or a pair of front surface supporting portions protruding respectively from rear and front surfaces of the sealed main body portion. In the plan view, the heat dissipation plate is formed between the pair of attachment holes, which are in turn between the pair of rear surface supporting portions. The pair of front surface supporting portions are formed substantially between the pair of attachment holes in the plan view.

A package construction includes: a die pad, and a suspension lead remaining portion connected to the die pad. Here, an offset portion is provided from a peripheral edge portion of the die pad to the suspension lead remaining portion. Also, the suspension lead remaining portion has: a first end portion connected to the die pad, and a second end portion opposite the first end portion. Further, the second end portion of the suspension lead remaining portion is exposed from the side surface of the sealing body at a position spaced apart from each of the upper surface and the lower surface.

A semiconductor device according to one aspect includes a pad portion, an insulating layer that supports the pad portion, a first wiring layer that is formed in a layer below the pad portion and extends in a first direction below the pad portion, and a conductive member that is joined to a front surface of the pad portion and extends in a direction forming an angle of 30 to 30 with respect to the first direction. A semiconductor device according to another aspect includes a pad portion, an insulating layer that supports the pad portion, a first wiring layer that is formed in a layer below the pad portion and extends in a first direction below the pad portion, and a conductive member that is joined to a front surface of the pad portion and has a joint portion that is long in one direction in plan view and an angle of a long direction of the joint portion with respect to the first direction is 30 to 30.

A semiconductor device comprises a semiconductor chip and an electrically conductive chip carrier, wherein the semiconductor chip is mounted on the chip carrier. The semiconductor device furthermore comprises an electrically conductive extension element mechanically connected to the chip carrier, wherein the extension element and the chip carrier are formed as an integral single piece. A part of the chip carrier which has the extension element is configured as an antenna.

An electronic device that includes a substrate and a die disposed on the substrate, the die having an active surface. Wire bonds are attached from the active surface of the die to the substrate. A radiation barrier is attached to the substrate and disposed over the die. The radiation barrier is configured to mitigate electromagnetic radiation exposure to the die. A mold compound is formed over the die, the wire bonds, and the radiation barrier.

A power semiconductor module includes an AC bus bar having a first side that faces a first substrate and a second side that faces a second substrate. A first power transistor die has a drain terminal connected to a first metallic region of the first substrate and a source terminal connected to the first side of the AC bus bar. A second power transistor die has a drain terminal connected to the second side of the AC bus bar and a source terminal connected to a first metallic region of the second substrate. First and second DC bus bars are connected to the first metallic region of the respective substrates, vertically overlap one another, and protrude from a first side of a mold body that encapsulates the power transistor dies. The AC bus bar protrudes from a different side of the mold body as the DC bus bars.

A copper paste for joining contains metal particles and a dispersion medium, in which the copper paste for joining contains copper particles as the metal particles, and the copper paste for joining contains dihydroterpineol as the dispersion medium. A method for manufacturing a joined body is a method for manufacturing a joined body which includes a first member, a second member, and a joining portion that joins the first member and the second member, the method including: a first step of printing the above-described copper paste for joining to at least one joining surface of the first member and the second member to prepare a laminate having a laminate structure in which the first member, the copper paste for joining, and the second member are laminated in this order; and a second step of sintering the copper paste for joining of the laminate.

A semiconductor device includes: a supporting member having a wiring including a die-pad; a semiconductor element bonded to the die-pad; a wire bonded to the wiring and the semiconductor element; and a bonding layer that has a conductivity and bonds the die-pad and the semiconductor element. When viewed in a thickness direction of the semiconductor element, the die-pad includes a first region included inside a peripheral edge of the semiconductor element and a second region that is connected to the first region and extends farther then the peripheral edge of the semiconductor element. When viewed in the thickness direction, the wire is separated from the second region.