A photosensitive transfer material including a temporary support and a transfer layer including a photosensitive layer, in which a transmittance of the photosensitive layer to light having a wavelength of 365 nm is 0.1% to 30% or a transmittance of the photosensitive layer to light having a wavelength of 405 nm is 0.05% to 30%.

An accelerated test for applying a high voltage is performed without reducing a manufacturing yield of a semiconductor device using a wide gap semiconductor material. The technical idea in the embodiment is, for example, an idea of performing the accelerated test in the state of a semiconductor wafer to distinguish a latent defect as illustrated in FIG. 4. That is, the technical idea in the embodiment is to perform the accelerated test on a semiconductor chip containing a wide bandgap semiconductor material as a main component not in the state of a semiconductor chip but in the state of the semiconductor wafer.

A wafer manufacturing apparatus includes an ingot grinding unit for grinding an upper surface of an ingot to planarize the upper surface of the ingot, a laser applying unit for forming peel-off layers in the ingot at a depth therein, which corresponds to the thickness of a wafer to be produced from the ingot, from the upper surface of the ingot, a wafer peeling unit for holding the upper surface of the ingot and peeling off a wafer from the ingot at the peel-off layers, a tray having an ingot support portion and a wafer support portion, and a belt conveyor unit for delivering the ingot supported on the tray between the ingot grinding unit, the laser applying unit, and the wafer peeling unit.

A method for producing a semiconductor device includes providing a laminated body comprising a support member and a temporary fixing material layer provided on the support member, wherein the temporary fixing material layer comprises a first curable resin layer, a metal foil, and a second curable resin layer laminated in sequence on the support member. The method further includes temporarily fixing a semiconductor member to the support member, with the temporary fixing material layer interposed therebetween, processing the semiconductor member temporarily fixed to the support member, and irradiating the laminated body with light through the support member to cause the metal foil to transfer heat to one or both of the first curable resin layer and the second curable resin layer, thereby separating the semiconductor member from the support member.

A method of laying a protective sheet on a face side of a wafer includes preparing a first protective sheet having, on one surface thereof, a non-adhesive portion to be coextensive with a device region of the wafer and an adhesive portion to be positioned along an outer circumferential excessive region of the wafer, affixing the one surface of the first protective sheet to the face side of the wafer, dropping a liquid resin onto a surface of a second protective sheet that has surface irregularities ranging from Ra 0.2 to 7 m and is free of an adhesive layer, bringing another surface of the first protective sheet into facing relation to the surface of the second protective sheet onto which the liquid resin has been dropped, and curing the liquid resin.