The present disclosure provides a semiconductor structure, including a substrate, a gate structure over the substrate, including a work function layer over the substrate, a dielectric layer at least partially surrounding the gate structure, and a capping layer over the gate structure, wherein a bottom of the capping layer includes at least one protrusion protruding toward the substrate.

The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group; and k represents the number of Ls and is an integer of 0 to 5) in an amount of 80 mass % or more. ##STR00001##

Method and systems for cleaning and wetting a semiconductor substrate, are provided. Methods and systems include forming an atmosphere in a basin housing the semiconductor substrate with a gas having a higher solubility in a wetting agent than oxygen. Methods and systems include spraying the wetting agent with a spray head onto the substrate while maintaining the atmosphere. Methods and systems include rotationally translating the semiconductor substrate, the spray head, or both the semiconductor substrate and the spray head, Methods and systems include wetting a plurality of features defined in the substrate.

Provided is a semiconductor substrate cleaning composition capable of reducing damage to an oxide film while having a high Ti/W etching selectivity ratio.

Disclosed is a semiconductor substrate cleaning composition including: (A) an oxidizing agent; and (B) a metal-tungsten corrosion inhibitor, wherein the semiconductor substrate cleaning composition does not include (C) a fluorine compound or further contains the fluorine compound in an amount of less than 0.005% by mass with respect to a total mass of the semiconductor substrate cleaning composition, and the semiconductor substrate cleaning composition has a pH of 7 or less.

There are provided a processing solution containing an alkali compound, water, and a corrosion inhibitor, in which the amount of dissolved oxygen one week after the preparation of the processing solution is 0.2 mg/L or more and 1.5 mg/L or less, and the corrosion inhibitor is at least one selected from the group consisting of N,N-diethylhydroxylamine, 1-thioglycerol, 1-amino-4-methylpiperazine, carbohydrazide, methylethylketoxime, erythorbic acid, and salts thereof, a method for manufacturing the processing solution, and a method for processing a substrate and a method for manufacturing a semiconductor device using the processing solution.

An object of the present invention is to provide a treatment liquid for a semiconductor device, which is excellent in performance of suppressing surface roughness of a metal film containing cobalt, and a treatment method for an object to be treated, using the treatment liquid. The treatment liquid of the present invention is a treatment liquid for a semiconductor device, the treatment liquid containing water, a first component which is an alicyclic heterocyclic compound containing a nitrogen atom as a ring member atom, and a second component which is a compound different from the first component and is an alicyclic heterocyclic compound having a hydroxyl group.

The present disclosure provides etching compositions that can selectively etch TiN in the presence of a variety of other layers, such as, for example, W, AlO.sub.x, and interlayer dielectrics (ILD).

The present description relates to a method of manufacturing a silicon carbide wafer comprising forming a semiconductor substrate comprising SiC at a surface or at least specific parts of the surface thereof; cleaning a surface area of the substrate by a hydrogen plasma atmosphere; applying nickel metal contact material on the cleaned surface area to form SiC/Ni metal stacks at the surface of or at least parts of the SiC substrate; and annealing the SiC/Ni metal stacks to form Ohmic contacts at the interface between the SiC and the nickel metal.

A composition for cleaning a microelectronic device substrate is provided. The composition is useful for cleaning in-process microelectronic device substrates possessing exposed cobalt, molybdenum, copper, molybdenum, tungsten, and dielectric surfaces. Also provided is a method for cleaning such devices and a kit comprising one or more of the components of the composition.

A system is provided. The system includes a semiconductor fabrication station and a rescue system. The semiconductor fabrication station includes a tank to hold a liquid. The semiconductor fabrication station is configured to perform a semiconductor fabrication process on a semiconductor wafer disposed in the tank. The rescue system is configured to monitor a signal line indicative of a state of the semiconductor fabrication station. The rescue system is configured to open a drain valve of the tank to drain the liquid from the tank in response to the signal line indicating a potential fabrication station error.