The present invention relates to a chemical vapor deposition chamber article. The present invention further relates to a method of processing an article of a chemical vapor deposition chamber for manufacturing semiconductor components, as well as chemical vapor deposition chamber article obtained through such a method. In a first aspect of the invention, there is provided, a chemical vapor deposition chamber article such as a wafer carrier, for manufacturing semiconductor components, said chamber article having a body and a surface comprised of silicon carbide, characterized in that said surface is provided with a protective layer at least on parts of said surface which are subject to parasitic deposition during said manufacturing of said semiconductor components in said chamber, and wherein said protective layer comprises an oxidized surface.

Carriers for polishing workpieces with flats or voids are provided. In one aspect, a substrate carrier head for a chemical mechanical planarization (CMP) system include a carrier body comprising an aperture configured to receive a wafer and a membrane having a first surface configured to contact a surface of the wafer and a second surface opposing the first surface, the membrane having a primary zone and a secondary zone. The substrate carrier head further includes a membrane cavity formed along the second surface and configured to apply pressure to the membrane within the primary zone, and a membrane support plate configured to support the secondary zone of the membrane.

A joined body includes a first member, a second member, and a joining portion disposed therebetween and joining the first member and the second member. The joining portion includes a first joining layer on a side toward the first member and formed of a first joining material, a second joining layer on a side toward the second member and formed of a second joining material, and a metal layer therebetween and having a plurality of holes communicating with one another. The metal layer includes a first-joining-material-impregnated layer on a side toward the first joining layer and in which the plurality of holes are impregnated with the first joining material, a second-joining-material-impregnated layer on a side toward the second joining layer and in which the plurality of holes are impregnated with the second joining material, and an unfilled hole layer therebetween and in which the plurality of holes are void.

A substrate fixing device includes: a base plate; an electrostatic adsorption member that adsorbs and holds a substrate; and a first adhesive layer that adhesively bonds the electrostatic adsorption member to the base plate. A storage modulus of the first adhesive layer is not less than 0.01 MPa and not more than 25 MPa within a temperature range of 110 C. to 250 C.

A universal ring wafer support apparatus that includes at least one raised support to securely support different size wafers above and separated from the main body to enable dust particles and other contaminants to flow away from a wafer and through the main body to a back side thereof. The universal ring wafer support apparatus and the at least one raised support are formed of a highly conductive material while a top surface of the at least one raised support includes contact material(s) having a high gripping force to raise, grip and securely support a wafer thereon.

Systems and methods for plasma processing of a semiconductor workpiece are provided. In one example, a plasma processing system includes a plasma chamber. The plasma processing system includes an inductive coil disposed about the plasma chamber. The plasma processing system includes a processing chamber downstream of the plasma chamber. The plasma processing system includes a workpiece support in the processing chamber. The plasma processing system includes a component with a coating in the processing chamber, the plasma chamber, or between the processing chamber and the plasma chamber.

The present invention provides a susceptor with improved responsiveness of temperature control, and an object thereof is to obtain a high-quality wafer product without impairing productivity. Provided is a susceptor that generates heat by induction heating, the susceptor including a graphite base material and a ceramic coating layer. The graphite base material exhibits a variation (.sub.max/.sub.min) Of an in-plane electrical resistivity distribution of the graphite base material at room temperature of 1.00 to 1.05 and a rate of high-temperature change (.sub.1600/.sub.800) of electrical resistivity at 1600 C. to that at 800 C. of 1.14 to 1.30.

A substrate support includes a support and a gel member. The support is for supporting a substrate. The gel member is provided at a location of the support in contact with the substrate and is made of a gel holding a solvent by a polymer network.

Described herein is a technique capable of preventing a constituent contained in an aluminum alloy from being vaporized and scattered when the aluminum alloy is used in a process vessel which is heated to a high temperature. According to one aspect thereof, there is provided a technique including a process chamber; a substrate support configured to support a substrate in the process chamber; and a heater configured to heat the substrate supported by the substrate support, wherein the substrate support is made of an aluminum alloy containing magnesium, and a surface of the substrate support is coated by a coating film of aluminum oxide containing magnesium oxide and being substantially free of magnesium.

An apparatus, system and method for providing a stationary chuck for positionally maintaining an associated in-process wafer. The stationary chuck may include a base plate having, on an upper surface thereof, a plurality of machined concentric ridges that form a series of concentric circular zones; a silicon carbide coating on the upper surface of the base plate; and a plurality of silicon carbide inlays capable of being bonded onto the silicon carbide coating in the concentric circular zones.