Semiconductor manufacturing equipment including a main body having a bonding head, a head heater at a bottom of the bonding head, the head heater including a thermal compression surface, negative pressure channels recessed from the thermal compression surface and the negative pressure channels including holes therein, and a bonding tool having a first surface, a second surface, grooves at the first surface, the first surface configured to contact the thermal compression surface, and the second surface opposite to the first surface contacting a semiconductor chip for thermal compression may be provided.

A heater head may include a heater head unit having a vacuum conduit hole formed in an external surface thereof; a heater insulation block disposed in a lower portion of the heater head unit; a heater base unit disposed in a lower portion of the heater insulation block; a first vacuum conduit communicating from the vacuum conduit hole of the heater head unit to the heater insulation block and the heater base unit in an arrangement direction of the heater head unit, the heater insulation block and the heater base unit; a second vacuum conduit extending into the heater base unit in a portion of an outer side of the heater base unit and communicating with the first vacuum conduit; and a conduit bushing inserted into at least one of the first vacuum conduit and the second vacuum conduit and forming a vacuum conduit.

A method of fabricating a semiconductor package includes disposing a preliminary semiconductor package on a stage, the preliminary semiconductor package including a substrate to which a pad part is attached, an interposer disposed on the substrate, and a semiconductor chip disposed between the substrate and the interposer. A bonding tool is disposed on the interposer. The bonding tool includes a first region and a second region outside of the first region. The second region of the bonding tool corresponds to the pad part. The interposer and the substrate are bonded to each other.

A laser compression bonding device comprises: a carrier for placing a substrate; a transparent compression head for holding and displacing an electronic component, wherein the transparent compression head comprises a central portion for pressing the electronic component against the substrate via a solder material when the electronic component is placed on the substrate via the solder material, and a peripheral portion surrounding the central portion; a laser source for emitting a laser beam towards the carrier at least through the central portion of the transparent compression head to heat the solder material such that the electronic component is bonded onto the substrate via the solder material; and a heat spreader attached to the peripheral portion of the transparent compression head, wherein the heat spreader comprises a liquid channel for containing liquid that flows in the liquid channel to exchange heat with the transparent compression head.

There is provided an ultrasonic composite vibration device or the like that is configured by connecting a plurality of vibration elements so that stability of the connection state is improved. A first vibration element 11 and an intermediate vibration element 10 are co-axially connected at one designated connection location which, in a mid-section of an ultrasonic composite vibration device 1, is included in a range within a phase angle of 0.05 based on antinodes A (M1) of a standing wave M1 of the longitudinal vibration, and is included in a range within a phase angle of 0.22 based on nodes N (M2) of a standing wave M2 of the torsional vibration. Similarly, in the mid-section of the ultrasonic composite vibration device 1, the intermediate vibration element 10 and the second vibration element 12 are co-axially connected by a mechanical connection mechanism at another designated connection location.