A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a bond head assembly including a bonding tool configured for bonding the semiconductor element to the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas to a bonding area of the bonding system. The reducing gas delivery system includes a manifold. The manifold includes a lower surface defining (i) a reducing gas port for providing the reducing gas to the bonding area, and (ii) an exhaust port for removing a reaction product from the bonding area.

A semiconductor die package includes a semiconductor transistor die having a contact pad on an upper main face. The semiconductor die package also includes an electrical conductor disposed on the contact pad and fabricated by laser-assisted structuring of a metallic material, and an encapsulant covering the semiconductor die and at least a portion of the electrical conductor.

An electronic component mounting device (1) comprises: an electronic component supply unit (20) that supplies an electronic component having a bump electrode (EB); a transfer stage (31) that accumulates a flux (FX); a mounting stage (41) on which a substrate (BD) is placed; a plurality of heads that can each pick up an electronic component (CP); and a control unit (10) that controls movement of the plurality of heads. The control unit (10) is configured so as to cause each of the plurality of heads to function as a dipping head that dips the bump electrode (EB) of the electronic component (CP) into the flux (FX) accumulated on the transfer stage (31), or as a bonding head that mounts the electronic component (CP) to the substrate (BD) on the mounting stage (41) with the bump electrode (EB) interposed therebetween.

Methods of fabricating semiconductor devices and resulting bonded structures. An embodiment method includes tilting a plasma nozzle to an angle with respect to a substrate. The method includes applying, with the plasma nozzle, an oxidation gas onto a first side of at least one substrate-side copper bump on the substrate, forming an oxidized copper sidewall on the first side of the substrate-side copper bump. The method includes bonding a semiconductor chip to the substrate using the substrate-side copper bump.

A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a manifold configured to provide a reducing gas to a bonding area of the bonding system. At least a portion of the manifold is heated.