Disclosed is a wafer backside cleaning method, comprising: using a wafer clamping part to hold a wafer, a gap being formed between the wafer clamping part and the wafer; injecting a protective gas into the gap at a first flow rate; adjusting the flow rate of the protective gas from the first flow rate to a second flow rate, and rotating the wafer under the drive of the first rotational speed of the wafer clamping part to clean the backside of the wafer; adjusting the rotational speed of the wafer clamping part from the first rotational speed to a second rotational speed, so that the wafer is driven by the wafer clamping part to rotate for the drying process; stopping rotating the wafer, adjusting the flow rate of the protective gas to the first flow rate again from the second flow rate, and then taking out the wafer; and stopping injecting the protective gas after the wafer is taken out. According to the present invention, adjusting the switching logic and flow rate of the protective gas can ensure that the front side of the wafer is not prone to adsorption of external impurities during a wafer backside cleaning process, thereby improving the wafer backside cleaning stability.

A method for manufacturing a wafer having a functional film, with an outer peripheral part of a top face of the wafer annularly exposed, the method including: spin-coating a high-viscosity coating material that contains a functional film constituent over the top face of the wafer to form a coating film; subsequently, supplying a cleaning liquid to the outer peripheral part of the top face of the wafer and kept rotated to remove the coating film on the outer peripheral part of the top face of the wafer; subsequently, heating the coating film on the wafer to form a fluidity suppressed film; subsequently, supplying a cleaning liquid to the outer peripheral part of the top face of the wafer having the fluidity suppressed film and kept rotated to remove the fluidity suppressed film on the top face of the wafer; and subsequently, heating the fluidity suppressed film on the wafer.

The present disclosure relates to a process solution for polymer processing, containing a polar aprotic solvent, a fluorine-based compound, and a sulfur-containing compound. The process solution for polymer processing may have excellent storage stability and minimize damage to the metal layer while improving an ability to remove the adhesive polymer remaining on a circuit surface of a semiconductor wafer.

A substrate processing apparatus includes a hydrophobizing part configured to perform a hydrophobizing process of forming a hydrophobic film on a front surface of a substrate through vapor deposition of a hydrophobizing gas, an ultraviolet radiation part configured to radiate ultraviolet rays to a removal area on a rear surface of the substrate so as to remove the hydrophobic film formed in the removal area in the hydrophobizing process, and a resin-film forming part configured to form a fluororesin film in the removal area after the hydrophobic film is removed.