A package structure includes a first dielectric layer disposed on a first patterned circuit layer, a first conductive via in the first dielectric layer and electrically connected to the first patterned circuit layer, a circuit layer on the first dielectric layer, a second dielectric layer on the first dielectric layer and covering the circuit layer, a second patterned circuit layer on the second dielectric layer and including conductive features, a chip on the conductive features, and a molding layer disposed on the second dielectric layer and encapsulating the chip. The circuit layer includes a plurality of portions separated from each other and including a first portion and a second portion. The number of pads corresponding to the first portion is different from that of pads corresponding to the second portion. An orthographic projection of each portion overlaps orthographic projections of at least two of the conductive features.

Integrated circuit assemblies can be fabricated on a wafer scale, wherein a base template, having a plurality of openings, may cover a base substrate, such as a die wafer, wherein the base substrate has a plurality of first integrated circuit devices formed therein and wherein at least one second integrated circuit device is electrically attached to a corresponding first integrated circuit device through a respective opening in the base template. Thus, when the base substrate and base template are singulated into individual integrated circuit assemblies, the individual integrated circuit assemblies will each have a first integrated circuit that is edge aligned to a singulated portion of the base template. The singulated portion of the base template can provide an improved thermal path, mechanical strength, and/or electrical paths for the individual integrated circuit assemblies.

A display device and method for fabrication thereof are provided. The display device includes a first substrate, pixel electrodes on the first substrate, light emitting elements respectively on the pixel electrodes, and including first semiconductor layers, second semiconductor layers, active layers respectively between the first semiconductor layers and the second semiconductor layers, a first light emitting element including a first active layer of the active layers, a second light emitting element including a second active layer of the active layers that is different from the first active layer, a third light emitting element including a third active layer of the active layers that is different from the first and second active layers, and a fourth light emitting element including a fourth active layer of the active layers that is different from the first to third active layers, and a common electrode layer on the light emitting elements.

A display device includes a base layer, a color filter layer on the base layer and including a color filter located at an emission area, a light emitting element layer on the color filter layer and including a light emitting element located at the emission area, a first electrode on a first end of the light emitting element, and a second electrode on a second end of the light emitting element, a circuit layer on the light emitting element layer and including circuit elements and lines connected to the first electrode and the second electrode, and pads on the circuit layer and connected to the lines, and the first electrode and the second electrode may include a reflective conductive material.

Disclosed is a stacked electronic device including a first and second bonded structure. The first bonded structure includes a first and second semiconductor element, each having a semiconductor region, a front side on one side of the semiconductor region including active circuitry, and a back side opposite the front side. The front side of the first semiconductor element is bonded and electrically connected to the front side of the second semiconductor element. The second bonded structure includes a third and fourth semiconductor element, which can include similar components to the first and second semiconductor elements. The front side of the third semiconductor element is bonded and electrically connected to the front side of the fourth semiconductor element. The back side of the second semiconductor element is bonded and electrically connected to the back side of the third semiconductor element.

A bonded structure is disclosed. The bonded structure can include an interconnect structure. The bonded structure can also include a first die directly bonded to the interconnect structure. The bonded structure can also include a second die mounted to the interconnect structure. The second die is spaced apart from the first die laterally along an upper surface of the interconnect structure. The second die is electrically connected with the first die at least partially through the interconnect structure. The bonded structure can further include a dielectric layer that is disposed over the upper surface of the interconnect structure between the first die and the second die.

Electronic packages, die structures and methods of fabrication are described in which a recess is formed by removing material from the edges and corners of a die that may increase the risk of non-bonding or delamination. In an embodiment, a die includes a recess with a width that extends from a perimeter edge to a recessed edge, and a depth that extends from a top surface to a recess floor. In some embodiments, the recess is filled with gap fill material. In other embodiments, the recess is not filled with gap fill material.

Methods for fabricating flexible interposers for providing electrical connection between devices mounted at different vertical positions with respect to a substrate or a planar interposer. A bonded structure may comprise a bent flexible interposer extending from a first interposer portion between a main device on the substrate or the planar interposer and a second interposer portion above the main device and above or below a device positioned above the main device and electrically connected to the main device via a bent portion of the flexible interposer.

In one example, a device includes a redistribution layer (RDL) substrate comprising a first side and a second side opposite the first side. A wafer component can be coupled to the first side of the RDL substrate. A first bond interface can be disposed between the wafer component and the RDL substrate. The first bond interface can be provided by a first hybrid bond. An electronic component can be coupled to the second side of the RDL substrate. A second bond interface can be disposed between the electronic component and the RDL substrate. The second bond interface can be within a footprint of the first bond interface and can be provided by a second hybrid bond. A vertical interconnect can be disposed lateral to a sidewall of the electronic component. The vertical interconnect can be coupled to the RDL substrate. Other examples and related methods are also disclosed herein.

An electronic circuit module. The module has a multilayered LTCC circuit carrier made of structured inorganic substrate layers, which have electrical and/or thermal conduction structures for electrical and/or thermal conduction, at least one electronic component, which is arranged on a first side and/or an opposite second side of the LTCC circuit carrier, and at least one SiC power semiconductor. The at least one SiC power semiconductor is embedded in the multilayered LTCC circuit carrier and enclosed at least on three sides by the multilayered LTCC circuit carrier. Connection contacts of the SiC power semiconductor contact the electrical and/or thermal conduction structures of the LTCC circuit carrier.