According to one embodiment, a semiconductor device that can prevent occurrence of defects is provided. A semiconductor device according to the present embodiment includes a wiring layer that includes a plurality of lines, and a columnar electrode that is integrally provided with the lines and extends from a bottom of one of the lines in a direction substantially perpendicular to the wiring layer. The lines include conductive films and a first film, the conductive and first films being alternately stacked in the direction substantially perpendicular to the wiring layer.

The present disclosure provides a three-dimensional stacking fan-out packaging device and a method for preparing a three-dimensional stacking fan-out packaging device, and relates to the field of chip packaging. In this device, the concave chip bonding area is defined by the pre-supported electrical connection frame; a plurality of first chips with functional surfaces towards the first direction and a plurality of second chips with functional surfaces towards the second direction are arranged in the chip bonding area; and the first stacking chip and the second stacking chip are arranged in a central symmetry or plane symmetry.

A semiconductor package includes a leadframe comprising first leads and second leads, a substrate connected between the first leads and the second leads, a base plate, a first semiconductor transistor die connected between the base plate and the substrate and including a first source pad, a first drain pad, and a first gate pad, a second semiconductor transistor die connected between the base plate and the substrate and comprising a second source pad, a second drain pad, and a second gate pad, wherein the first semiconductor die and the second semiconductor die are interconnected to form a half-bridge circuit, wherein the first source pad of the first semiconductor die is electrically connected with the second drain pad of the second semiconductor die, an encapsulant embedding the first semiconductor die, the second semiconductor transistor die, and horizontal portions of the first leads and the second leads.

A semiconductor device includes a first semiconductor die, a second semiconductor die bonded to the first semiconductor die, a sealing layer, and an encapsulant disposed on the first semiconductor die and laterally covering the sealing layer and the second semiconductor die. The second semiconductor die is bent with an edge of the second semiconductor die curving upwardly, where a non-bond area is at a periphery of a bonding interface of the first and second semiconductor dies. The sealing layer seals the non-bond area of the first and second semiconductor dies.

According to one embodiment, a semiconductor memory device includes a stacked body in which a plurality of first conductive layers and a plurality of insulating layers are alternately stacked one by one; a pillar that includes a semiconductor layer extending in the stacked body in a stacking direction of the stacked body; a first layer that is arranged above the stacked body and has a semiconductor as a main component; and a second layer that is arranged above the first layer and has a metal as a main component, in which the pillar penetrates the first layer, and the semiconductor layer protrudes into the second layer.

An electronic component embedded substrate may include at least an electronic component including a first terminal surface and a first terminal electrode, the first terminal electrode being on the first terminal surface, a first conductive layer facing the first terminal surface, an insulating layer between the first conductive layer and the first terminal surface, the insulating layer including a via hole penetrating therethrough, the first conductive layer filling the via hole and being connected to the first terminal electrode, and a seed layer in the via hole, the seed layer including a conductive film and an adhesive film, the adhesive film being between the conductive film and a boundary of the via hole.

A semiconductor device includes a circuit substrate, a first semiconductor element, a second semiconductor element, and a connection element. The circuit substrate includes a first pad. The first semiconductor element is disposed on the circuit substrate and includes a second pad and a third pad. The second semiconductor element is disposed on the circuit substrate. The connection element is disposed on the circuit substrate and electrically connects the first semiconductor element and the second semiconductor element. The connection element includes a fourth pad. The second pad is bonded to the first pad through a conductive material, and the third pad is directly bonded to the fourth pad.

A semiconductor package structure is provided. The semiconductor package structure includes a substrate, a first semiconductor die, a second semiconductor die, a bridge structure and a memory structure. The substrate includes a wiring structure disposed in dielectric layers. The first semiconductor die and the second semiconductor die are disposed over the substrate. The bridge structure is embedded in the substrate. The first semiconductor die is electrically coupled to the second semiconductor die through the bridge structure. Moreover, the memory structure is embedded in the substrate and is positioned below the bridge structure.

A semiconductor package includes a lower redistribution structure including a lower connection pad, a semiconductor chip on the lower redistribution structure, an upper redistribution structure on a back surface of the semiconductor chip and including a first connection region and a second connection region, a connecting member electrically connecting the lower connection pad and the first connection region, an encapsulant covering the semiconductor chip and surrounding a side surface of the upper redistribution structure, and an upper bonding pad on the upper redistribution structure and electrically connected to the second connection region. The second connection region is at a vertical level higher than a vertical level of the first connection region. The second connection region is coplanar with an upper surface of the encapsulant.

A high frequency module capable of improving heat dissipation characteristics of a power amplifier and suppressing influence of heat of the power amplifier on another electronic component is provided. A high frequency module includes a mounting substrate, a power amplifier, a switch, a plurality of external connection terminals, and a connector. The mounting substrate has a first main surface and a second main surface that are opposite to each other. The power amplifier and the switch are disposed on the second main surface of the mounting substrate. The plurality of external connection terminals are disposed on the second main surface of the mounting substrate. The connector is able to be connected to an external substrate. The plurality of external connection terminals include a first external connection terminal that is connected to the connector. The first external connection terminal is disposed between the power amplifier and the switch.