A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing a component (A) and a component (B) and having pH of 8.0 or more: component (A): a polymer having a constituent unit having a quaternary nitrogen-containing onium salt or a constituent unit of a structure (X) below, ##STR00001## component (B): a buffer represented by a formula: RCOONH.sub.4.sup.+.

Provided is a substrate cleaning apparatus including a first support unit having a first support surface extending to a first radius and configured to support a substrate at a first cleaning area of the substrate, the first support unit configured to rotate around a central axis, a second support unit having a second support surface extending from a second radius larger than the first radius to a third radius larger than the second radius and configured to support the substrate at a second cleaning area, and configured to rotate around the central axis, a first nozzle unit configured to spray cleaning fluid onto the first cleaning area of the substrate when the substrate is supported by the second support unit, and a second nozzle unit configured to spray the cleaning fluid onto the second cleaning area of the substrate when the substrate is supported by the first support unit.

The present invention provides a method for treating a substrate. The method for treating a substrate comprises: a monitoring step of calculating a flow rate of a liquid, comparing the calculated measurement flow rate of the liquid with a set flow rate of the liquid in a normal state, and determining whether an error occurs in the measurement flow rate; and when an error is determined to occur in the measurement flow rate in the monitoring step, a feedback step of performing feedback control of a discharge flow rate of the liquid discharged to the substrate, wherein the feedback step determines a type of the error, and differently performs the feedback control according to the determined type of the error.

A method of processing a silicon surface includes using a first radical species to remove contamination from the surface and to roughen the surface; and using a second radical species to smooth the roughened surface. Reaction systems for performing such a method, and silicon surfaces prepared using such a method, also are provided.

Methods and systems for processing a bevel edge of a wafer in a bevel plasma chamber. The method includes receiving a pulsed mode setting for a RF generator of the bevel plasma chamber. The method includes identifying a duty cycle for the pulsed mode, the duty cycle defining an ON time and an OFF time during each cycle of power delivered by the generator. The method includes calculating or accessing a compensation factor to an input RF power setting of the generator. The compensation factor is configured to add an incremental amount of power to the input power setting to account for a loss in power attributed to the duty cycle to be run in the pulsed mode. The method is configured to run the generator in the pulse mode with the duty cycle and the pulsing frequency. The generator is configured to generate the input power in pulsing mode that includes incremental amount of power to achieve an effective power in the bevel plasma chamber to achieve a target bevel processing throughput, while reducing charge build-up that causes arcing damage.

A substrate processing apparatus includes a holding unit, a liquid supply unit, a collection unit, a circulation path, a gas supply unit, and a control unit. The holding unit holds a substrate. The liquid supply unit supplies a processing liquid to a first main surface of the substrate held by the holding unit. The collection unit collects the processing liquid used for processing the substrate. The circulation path returns the processing liquid collected by the collection unit back to the liquid supply unit. The gas supply unit supplies a gas to a second main surface to the substrate held by the holding unit in a direction opposite to the first main surface. The control unit supplies the gas to the second main surface when supplying the processing liquid to be returned to the liquid supply unit by the circulation path to the first main surface.

A cleaning solution includes a solvent having Hansen solubility parameters: 25>.sub.d>13, 25>.sub.p>3, 30>.sub.h>4; an acid having an acid dissociation constant pKa: 11<pKa<4, or a base having pKa of 40>pKa>9.5; and a surfactant. The surfactant is an ionic or non-ionic surfactant, selected from ##STR00001##
R is substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and non-ionic surfactant has A-X or A-X-A-X structure, where A is unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, X includes polar functional groups selected from OH, O, S, P, P(O.sub.2), C(O)SH, C(O)OH, C(O)OR, O, N, C(O) NH, SO.sub.2OH, SO.sub.2SH, SOH, SO.sub.2, CO, CN, SO, CON, NH, SO.sub.3NH, and SO.sub.2NH.

A substrate processing apparatus is disclosed that includes a first chamber having a first internal pressure, a second chamber connected to the first chamber and having a second internal pressure greater than the first internal pressure, a transfer mechanism located in the second chamber and configured to transfer a substrate, and a blower located in the second chamber and configured to blow air to the substrate.

A post CMP cleaning apparatus is provided. The post CMP cleaning apparatus includes a cleaning stage. The post CMP cleaning apparatus also includes a rotating platen disposed in the cleaning stage, and the rotating platen is configured to hold and rotate a semiconductor wafer. The post CMP cleaning apparatus further includes a vibrating device disposed over the rotating platen. The post CMP cleaning apparatus further includes a solution delivery module disposed near the vibrating device and configured to deliver a cleaning fluid to the semiconductor wafer. The vibrating device is configured to provide the cleaning fluid with a specific frequency which is at least greater than 100 MHz while the rotating platen is rotating the semiconductor wafer, so that particles on the semiconductor wafer are removed by the cleaning fluid.

There is provided a technique that includes (a) preparing a substrate including a first surface, which includes a first termination and constitutes at least a portion of an inner surface of a recess, and a second surface, which includes a second termination different from the first termination, and (b) removing the first termination selectively with respect to the second termination by exposing the substrate to a processing solution containing a liquid that reacts with the first termination and an additive that reduces surface tension of the liquid.