Patent classifications
H10P70/20
Wafer transfer carrier and semiconductor device manufacturing method
A wafer transfer carrier includes a container and a lid portion. The container accommodates a wafer and a liquid, and is movable in a state where the wafer is in contact with the liquid. The lid portion is capable of sealing an inside of the container.
Wafer wet cleaning system
The present disclosure describes a wafer cleaning process in which a drained cleaning solution, which is used to remove metal contaminants from the wafer, is sampled and analyzed to determine the concentration of metal ions in the solution. The wafer cleaning process includes dispensing, in a wafer cleaning station, a chemical solution on one or more wafers; collecting the dispensed chemical solution; determining a concentration of contaminants in the chemical solution; in response to the concentration of the contaminants being greater than a baseline value, adjusting one or more parameters in the cleaning process; and in response to the concentration of the contaminants being equal to or less than the baseline value, transferring the one or more wafers out of the wafer cleaning station.
Semiconductor wafer cleaning apparatus
A semiconductor wafer cleaning apparatus is provided. The semiconductor wafer cleaning apparatus includes a spin base, a spindle extending through the spin base, and a clamping member covering the spin base. The spindle includes a mounting part and a supporting part disposed on the mounting part. The mounting part includes an inner projection, the supporting part includes a conical projection, and the conical projection is surrounded by the inner projection. The semiconductor wafer cleaning apparatus further includes a first sealing ring disposed between the spin base and the mounting part.
Substrate processing device and substrate processing method
A substrate is held by an upper holding device, and a lower-surface center region of the substrate is cleaned. During this cleaning, a suction holder of a lower holding device located below the upper holding device is rotated. The substrate held by the upper holding device is transferred to a suction holder of the lower holding device. A lower-surface outer region of the substrate held by the suction holder is cleaned. After the lower-surface center region of the substrate is cleaned and until the substrate is transferred to the suction holder of the lower holding device, rotation of the lower holding device is stopped. Further, the suction holder is moved in a horizontal direction by a base device. A rotation stopping operation for the suction holder and a horizontal moving operation for the suction holder are performed such that the periods for these operation at least partially overlap with each other.
MANUFACTURING SEMICONDUCTOR DEVICE USING SELECTIVE DIELECTRIC ON DIELECTRIC (DOD) DEPOSITION PROCESS
A method of manufacturing a semiconductor device includes providing a structure including a first insulating pattern and a metal pattern disposed on a substrate, performing a cleaning process on the structure, exposing the structure to a reducing agent, forming, selectively, a passivation layer on the metal pattern, forming, selectively, a second insulating pattern on the first insulating pattern, and performing thermal processing on the structure.
Substrate processing device and substrate processing method
A substrate is held by an upper holding device, and a lower-surface center region of the substrate is cleaned with use of a lower-surface brush. The substrate is lowered from an upper holding device and transferred to a suction holder of a lower holding device. The substrate held by the suction holder is cleaned with use of a processing liquid. A cup is provided to be liftable and lowerable between an upper cup position and a lower cup position. The cup is in the lower cup position when waiting. A period for the substrate lowering operation and a period for the cup lifting operation at least partially overlap with each other.
Substrate processing apparatus
A substrate processing apparatus includes a first drying unit configured to perform a first drying process using a drying fluid on a substrate having a liquid film formed thereon, a first fluid supply unit configured to supply the drying fluid into the first drying unit, a second drying unit configured to perform a second drying process using the drying fluid on the substrate on which the first drying process is performed, a second fluid supply unit configured to supply the drying fluid into the second drying unit, a first door configured to control opening and closing of the first drying unit, and a second door configured to control opening and closing of the second drying unit, wherein the first door is opened when pressure in the first drying unit reaches a first transfer pressure, and the second door is opened when pressure in the second drying unit reaches a second transfer pressure.
SEMICONDUCTOR DEVICE CLEANING SOLUTION AND METHOD FOR PREPARING SAME
The present disclosure relates to a semiconductor device cleaning solution comprising a phenol compound at 10 ppb or less and having a ratio of a plasma generation number per pulsed laser irradiation number by a laser-induced breakdown detection method of less than 2%, and relates to a high-purity semiconductor device cleaning solution capable of suppressing the generation of residues on the cleaning target surface during cleaning of the semiconductor devices by effectively controlling phenol compounds that are inevitably generated in the semiconductor device cleaning solution preparation process and a method for preparing the same.
APPARATUS AND METHOD FOR CLEANING SEMICONDUCTOR WAFER
The present disclosure describes a cleaning system using a cleaning liquid generated by a cooling system. and a second flow rate of the second liquid coolant based on a temperature of the second die. The cleaning system includes a cooling system configured to generate a cleaning liquid, a controller configured to control a temperature of the cleaning liquid, a wafer holder configured to hold and rotate a wafer, a first nozzle above the wafer and configured to spray the cleaning liquid on a top surface of the wafer, and a second nozzle below the wafer and configured to spray the cleaning liquid on a bottom surface of the wafer.
Integrated semiconductor die vessel processing workstations
In certain embodiments, a workstation includes: a cleaning station configured to clean a die vessel, wherein the die vessel is configured to secure a semiconductor die; an inspection station configured to inspect the die vessel after cleaning to determine whether the die vessel is identified as passing inspection; and a conveyor configured to move the die vessel between the cleaning station and the inspection station.