A package structure includes a circuit substrate, a semiconductor package, a first ring structure and a second ring structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The first ring structure is attached to the circuit substrate and surrounding the semiconductor package, wherein the first ring structure includes a central opening and a plurality of corner openings extending out from corners of the central opening, the semiconductor package is located in the central opening, and the plurality of corner openings is surrounding corners of the semiconductor package.

A package comprising a metallization portion; an integrated device comprising a plurality of pillar interconnects, wherein the integrated device is coupled to the metallization portion through the plurality of pillar interconnects; and an encapsulation layer at least partially encapsulating the integrated device, wherein the encapsulation layer is coupled to the metallization portion.

Implementations of a semiconductor package may include two or more die, each of the two more die coupled to a metal layer at a drain of each of the two more die, the two or more die and each metal layer arranged in two parallel planes; a first interconnect layer coupled at a source of each of the two more die; a second interconnect layer coupled to a gate of each of the two or more die and to a gate package contact through one or more vias; and an encapsulant that encapsulates the two or more die and at least a portion of the first interconnect layer, each metal layer, and the second interconnect layer.

A system and method for a highly integrated environmental sensor and process for manufacturing said sensor is disclosed. Examples of the present disclosure may include an integrated sensor. The integrated sensor may include a redistribution layer (RDL). The integrated sensor may also include a control circuit coupled to the RDL. The integrated sensor may additionally include an analog front-end circuit coupled to the RDL and the control circuit. The integrated sensor may further include an environmental sensor coupled to the analog front-end circuit. The environmental sensor may include a first sensing element deposited in a first trench etched on the RDL using inkjet material deposition.

An electronic device includes a first semiconductor component, a second semiconductor component, an encapsulation layer, and a circuit layer. The encapsulation layer has a first side, and the encapsulation layer surrounds the first semiconductor component and the second semiconductor component. The circuit layer is disposed on the first side of the encapsulation layer. The encapsulation layer has a first thickness, and the first semiconductor component has a second thickness. The first thickness is greater than the second thickness. A difference between the first thickness and the second thickness is greater than half of the first thickness and less than three times the second thickness. In a top view, the encapsulation layer has a first area, the first semiconductor component has a second area, the second semiconductor component has a third area, and a sum of the second area and the third area is greater than half of the first area.

A method for fabricating a semiconductor wafer may etch a surface of a silicon substrate to form a first cavity and a second cavity. The method may apply a first dielectric layer to the surface of the silicon substrate, the first cavity, and the second cavity. The method may affix a first die into the first cavity of the silicon substrate. The method may affix a second die into the second cavity of the silicon substrate. The method may apply a second dielectric layer to the surface of the silicon substrate, an exposed surface of the first die, and an exposed surface of the second die. The method may form a redistribution layer over the second dielectric layer, where the redistribution layer is configured to electrically couple the first die to the second die.

A semiconductor package includes: a support substrate; a first semiconductor chip on the support substrate, the first semiconductor chip including one or more first chip pads; a second semiconductor chip spaced apart from the first semiconductor chip, the second semiconductor chip including one or more second chip pads; a third semiconductor chip on the first semiconductor chip and the second semiconductor chip, the third semiconductor chip comprising one or more third chip pads; one or more first conductive structures on the one or more first chip pads; one or more second conductive structures on the one or more second chip pads; and a redistribution layer on the one or more first conductive structures, the one or more second conductive structures, and the one or more third chip pads.

A die includes a substrate, a conductive pad, a connector a protection layer, and a passivation layer. The conductive pad is disposed over the substrate. The connector is disposed on the conductive pad. The connector comprises a seed layer and a conductive post on the seed layer. The protection layer laterally covers the connector. The passivation layer is disposed between the protection layer and the conductive pad. The conductive post is separated from the passivation layer and the protection layer by the seed layer.

A semiconductor structure includes a functional die, a dummy die, a conductive feature, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The conductive feature is electrically connected to the functional die. The seal ring is disposed aside the conductive feature. The alignment mark is disposed between the seal ring and the conductive feature, and the alignment mark is electrically isolated from the dummy die, the conductive feature and the seal ring.

A packaging structure and methods of forming the same are described. In some embodiments, the structure includes a semiconductor die and an RDL disposed over the semiconductor die. The RDL includes a first dielectric layer, a second dielectric layer disposed over the first dielectric layer, and a conductive feature. The conductive feature includes a first portion disposed in the first dielectric layer and a second portion disposed in the second dielectric layer. The RDL further includes a first functional layer disposed between the first dielectric layer and the first portion of the conductive feature and a first n-type insulating layer disposed between the first functional layer and the first portion of the conductive feature. The first n-type insulating layer has a higher concentration of negative ions than the first functional layer.