A photonic chip structure may include: an electronic integrated circuit chip; a connection terminal connected to the electronic integrated circuit chip; an optical integrated circuit chip under the electronic integrated circuit chip and the connection terminal in a vertical direction and including a photonic integrated circuit (PIC) connection pad and a first PIC insulating layer on the PIC connection pad, the PIC connection pad connected to the connection terminal; and an optical block spaced apart from the electronic integrated circuit chip in a horizontal direction and configured to provide a path for optical signals to the optical integrated circuit chip, wherein the first PIC insulating layer includes a first cavity, and the optical block is in the first cavity.

A semiconductor package includes a semiconductor chip on a redistribution substrate and including a body, a chip pad on the body, and a pillar on the chip pad, a connection substrate including base layers and a lower pad on a bottom surface of a lowermost one of the base layers, a first passivation layer between the semiconductor chip and the redistribution substrate, and a dielectric layer between the redistribution substrate and the connection substrate. The first passivation layer and the dielectric layer include different materials from each other. A bottom surface of the pillar, a bottom surface of the first passivation layer, a bottom surface of a molding layer, a bottom surface of the lower pad, and a bottom surface of the dielectric layer are coplanar with each other.

Provided is a chip stack structure including a passivation layer, a plurality of conductive pillars passing through the passivation layer, a buffer chip located on the passivation layer, a plurality of core chips located on the buffer chip and stacked in a vertical direction, and a first molding layer located on the passivation layer and surrounding the buffer chip and the plurality of core chips, wherein an area of an upper surface of the passivation layer is greater than an area of a lower surface of the buffer chip.

A semiconductor package may include a first semiconductor chip, second semiconductor chips stacked on the first semiconductor chip in a vertical direction, adhesive layers interposed between the first semiconductor chip and one of the second semiconductor chips and between the second semiconductor chips, and a molding member on the first semiconductor chip. Edges of the adhesive layers may be positioned inward from sidewalls of the second semiconductor chips. The molding member may cover at least sidewalls of the second semiconductor chips and sidewalls of the adhesive layers. The molding member may fill edge gaps defined by the sidewalls of the adhesive layers and edges of upper surfaces and lower surfaces of the second semiconductor chips.

Provided is a chip structure including a redistribution structure, an electronic integrated circuit chip on an upper surface of the redistribution structure, and a photonic integrated circuit chip including a first substrate on an upper surface of the electronic integrated circuit chip and comprising an active surface and an inactive surface opposite to the active surface, a first reflector on the inactive surface of the first substrate, and a first wiring structure on the active surface of the first substrate, the first wiring structure comprising a waveguide, a grating coupler, and a second reflector, wherein a patterned surface of the grating coupler faces the redistribution structure.

A power semiconductor module arrangement comprises a substrate comprising a dielectric insulation layer, and a first metallization layer attached to the dielectric insulation layer, at least one semiconductor body mounted on the first metallization layer, and a first layer comprising an encapsulant, the first layer being arranged on the substrate and covering the first metallization layer the at least one semiconductor body, wherein the first layer is configured to release liquid or oil at temperatures exceeding a defined threshold temperature.

A bonded structure can include a first reconstituted element comprising a first element and having a first side comprising a first bonding surface and a second side opposite the first side. The first reconstituted element can comprise a first protective material disposed about a first sidewall surface of the first element. The bonded structure can comprise a second reconstituted element comprising a second element and having a first side comprising a second bonding surface and a second side opposite the first side. The first reconstituted element can comprise a second protective material disposed about a second sidewall surface of the second element. The second bonding surface of the first side of the second reconstituted element can be directly bonded to the first bonding surface of the first side of the first reconstituted element without an intervening adhesive along a bonding interface.

A package structure includes a die, an encapsulant laterally encapsulating the die, a warpage control material disposed over the die, and a protection material disposed over the encapsulant and around the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

A method of manufacturing a package structure at least includes the following steps. An encapsulant laterally is formed to encapsulate the die and the plurality of through vias. A plurality of first connectors are formed to electrically connect to first surfaces of the plurality of through vias. A warpage control material is formed over the die, wherein the warpage control material is disposed to cover an entire surface of the die. A protection material is formed over the encapsulant and around the plurality of first connectors and the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

Embodiments include packages and methods for forming packages which include interposers having a substrate made of a dielectric material. The interposers may also include a redistribution structure over the substrate which includes metallization patterns which are stitched together in a patterning process which includes multiple lateral overlapping patterning exposures.