A process flow for bonding a die to a substrate incorporates defectivity risk management and yield promotion by reducing flow complexity. In some embodiments, the process flow may include a radiation process on a component substrate to weaken an adhesive bonding of dies from a surface of the component substrate, a first wet clean process on the component substrate after the radiation process to clean die bonding surfaces, eject and pick processes after performing the first wet clean process to remove dies from the component substrate for bonding to a substrate, a plasma activation process on the substrate, a second wet clean process after the plasma activation process on the substrate to clean a substrate bonding surface of the substrate, and a hybrid bonding process to bond die bonding surfaces of the dies to the substrate bonding surface of the substrate.

A transfer apparatus includes a first vacuum transfer module; a first transfer robot disposed in the first vacuum transfer module and at least one ring. In addition, a second vacuum transfer module is provided; and a second transfer robot is disposed in the second vacuum transfer module. A tubular connecting module is disposed between the first vacuum transfer module and the second vacuum transfer module. Further, the first vacuum transfer module, the second vacuum transfer module and the tubular connecting module are arranged along a first direction, with the tubular connecting module having a first length in the first direction, and the first length is smaller than the diameter of the wafer. A wafer support is rotatably attached to the tubular connecting module and at least three ring supporting members outwardly extend from the wafer support to support the at least one ring.

The present application discloses a processing furnace comprising a furnace chamber; at least one infrared temperature measurement device; at least one calibration device comprising a black body module connected to the detection field of view of the corresponding infrared temperature measurement device; a controller; wherein the infrared temperature measurement device is configured to be capable of detecting the temperature of the black body module in the corresponding calibration device and obtaining calibration temperature data, and the controller is configured to calibrate the infrared temperature measurement device according to the standard temperature data and the calibration temperature data.

A substrate transfer method performed in a substrate processing apparatus including a transfer mechanism group configured to transfer a substrate into a carrier via a module group and an exposure apparatus is provided. The transfer mechanism group includes a first transfer mechanism configured to transfer the substrate in an order of the pre-stage module, the exposure apparatus, and a first post-stage module, and a second transfer mechanism configured to transfer the substrate in an order of the first post-stage module, a heating module, a developing module, and a second post-stage module, a post-stage transfer mechanism. The substrate transfer method includes comparing an exposure apparatus cycle time with a section transfer time required to transfer the substrate from a transfer section by the second transfer mechanism to a transfer section by the post-stage transfer mechanism; and setting the section transfer time based on a result of the comparing.

Disclosed is a substrate transfer apparatus including a moving plate including an upper magnetic levitation rail and a lower magnetic levitation rail, a processing chamber disposed adjacent to the moving plate and that processes a substrate, and a shuttle disposed between the upper magnetic levitation rail and the lower magnetic levitation rail, being moved on the moving plate, and that accommodates the substrate.

A method and apparatus for processing a semiconductor is disclosed herein. In one embodiment, a processing system for semiconductor processing is disclosed. The processing chamber includes two transfer chambers, a processing chamber, and a rotation module. The processing chamber is coupled to the transfer chamber. The rotation module is positioned between the transfer chambers. The rotation module is configured to rotate the substrate. The transfer chambers are configured to transfer the substrate between the processing chamber and the transfer chamber. In another embodiment, a method for processing a substrate on the apparatus is disclosed herein.

Provided is an apparatus of processing a substrate. The apparatus includes: a first module; a second module; and a buffer chamber disposed between the first module and the second module and temporarily storing a substrate transferred between the first module and the second module. The transfer chamber includes: a housing providing an inner space; a support unit including a plurality of support plates supporting the substrate in the inner space; a plurality of shower plates having an injection hole for injecting the gas to the substrate supported by the support unit; and a gas supply unit for supplying the gas to the shower plate, and the support plates are provided in a stacked structure, and each of the shower plates is provided to correspond to each of the support plates.

Disclosed is an apparatus for processing a substrate and an apparatus for transferring a substrate. The apparatus for processing the substrate includes: an index module including a load port on which a container containing a substrate is placed and an index robot that loads or unloads a substrate into or from the container placed on the load port; and a processing module for processing the substrate transferred from the container placed on the index module, in which the processing module includes: a buffer unit on which the substrate is placed temporarily; and a main transfer robot for transferring the substrate between the buffer unit and a processing chamber that processes the substrate, the index robot is provided to approach the buffer unit, and the buffer unit includes: a plurality of buffers which is stacked on each other and supports the substrate; and an interval changing unit for changing an interval between adjacent buffers among the buffers.

A working system for a semiconductor packaging process includes a machine equipment, a supply unit and a return device. The supply unit is correspondingly connected to the machine equipment and includes an input device and an output device. The return device is connected to the input device and the output device. As such, a magazine is transferred from the input device to the output device via the return device, thereby accelerating the operation speed of a production line.

Provided is an apparatus for processing a substrate, the apparatus including: a process module for processing a substrate; a buffer unit having a buffer blade on which the substrate is placed; and transfer unit for transferring the substrate between the process module and the buffer unit, in which the buffer unit includes a moving member for moving the buffer blade so that the buffer blade is moved to a standby position and a use position where the transfer unit is accessible.