A diffusion-couple synthesis method using a graphene synthesis tool(GST) including: providing a substrate-load(SL) which includes first-prepared substrate(fPS) and second-prepared- substrate(sPS), where fPS includes a first-carbon-source(fCS), a first-sacrificial-diffusion layer(fSDL), and a first-device-level(fDL), where a first-dielectric-layer(fDiLy) is disposed atop fDL, where fSDL is disposed directly atop fDiLy, where fCS is disposed directly atop the fSDL, and where the sPS includes a secondCS, a secondSDL, and a secondDL, where secondDL is disposed atop the secondDL, where the secondSDL is disposed atop secondDiLy, where secondCS is disposed atop secondSDL; providing a GST capable of applying pressure and temperature to SL within a process chamber(PC); placing SL within PC; applying the pressure and the temperature to SL, where sPS is inverted and disposed above fPS, where fCS is in direct contact with secondCS; forming graphene at a first interface between the fDiLy and the fSDL and at a second interface between secondDiLy and secondSDL.

A post CMP cleaning apparatus is provided. The post CMP cleaning apparatus includes a cleaning stage. The post CMP cleaning apparatus also includes a rotating platen disposed in the cleaning stage, and the rotating platen is configured to hold and rotate a semiconductor wafer. The post CMP cleaning apparatus further includes a vibrating device disposed over the rotating platen. The post CMP cleaning apparatus further includes a solution delivery module disposed near the vibrating device and configured to deliver a cleaning fluid to the semiconductor wafer. The vibrating device is configured to provide the cleaning fluid with a specific frequency which is at least greater than 100 MHz while the rotating platen is rotating the semiconductor wafer, so that particles on the semiconductor wafer are removed by the cleaning fluid.

A method of manufacturing a display apparatus includes preparing a panel with a panel layer displaying images, a first protection film on a first surface of the panel layer with a first adhesion layer, and a second protection film on a second surface of the panel layer with a second adhesion layer, disposing the panel on a stage, cutting the panel on the stage along a closed-curve line to a predetermined depth extending from the second protection film to at least a portion of the first adhesion layer, and separating a first portion of the panel inside the closed-curve line from a second portion of the panel outside the closed-curve line, such that the second portion is removed simultaneously with the entire first protection film according to a first boundary by the line and a second boundary between the panel layer and the first protection film.

A bonding apparatus configured to bond substrates includes a first holder configured to vacuum-exhaust a first substrate to attract and hold the first substrate on a bottom surface thereof; a second holder disposed under the first holder, and configured to vacuum-exhaust a second substrate to attract and hold the second substrate on a top surface thereof; a mover configured to move the first holder and the second holder relatively in a horizontal direction; a laser interferometer system configured to measure a position of the first holder or the second holder which is moved by the mover; a linear scale configured to measure a position of the mover; and a controller configured to control the mover based on a measurement result of the laser interferometer system and a measurement result of the liner scale.

A method of processing a bonded wafer formed by bonding a first wafer and a second wafer to each other via a bonding layer includes a coordinate generating step of generating coordinates of an undersurface position of the first wafer, the undersurface position being to be irradiated with laser beams, such that an end position of a crack extending from modified layers formed within the first wafer is located at an outer circumference of the bonding layer, and a modified layer forming step of forming a plurality of modified layers in a ring shape by irradiating the coordinates generated in the coordinate generating step with the laser beams of a wavelength transmissible through the first wafer.

A stealth dicing laser device including: a pulse laser generator configured to generate laser light; a condenser lens formed in an optical path of the laser light; a pupil filter configured to transform a phase of the laser light before the laser light passes through the condenser lens; and a controller configured to provide a phase control signal to the pupil filter, wherein the pupil filter transforms the phase of the laser light based on the phase control signal, wherein the phase control signal is a signal transforming a phase expression of the laser light based on a parameter.

A processing method of a bonded wafer includes forming a plurality of modified layers in a form of rings through positioning focal points of laser beams with a wavelength having transmissibility with respect to a first wafer inside the first wafer, from which a chamfered part is to be removed, from a back surface of the first wafer and executing irradiation, holding a second wafer side on a chuck table, and grinding the back surface of the first wafer to thin the first wafer. In the forming the modified layers, the focal points of the laser beams are set in such a manner as to gradually get closer to a joining layer in a direction from an inner side of the first wafer toward an outer side thereof, so that the plurality of ring-shaped modified layers are formed in a form of descending stairs.

A substrate separation apparatus includes: a holding part configured to hold and rotate a bonded substrate formed by bonding a pair of substrates together; a nozzle configured to separate the bonded substrate by injecting a fluid toward an outer periphery of the bonded substrate under rotation; and a nozzle drive part configured to change a direction of injection of the fluid from the nozzle between a first direction which is a direction extending along a tangent to the outer periphery of the bonded substrate and a second direction which is a direction facing a center of the bonded substrate.

The present invention relates to a tape sticking system for sticking a protective tape for protecting a peripheral portion of a substrate, such as a wafer. The tape sticking apparatus (10) includes a substrate holder (21) for sticking, a side roller (43), a first roller (46), a second roller (47), a roller-driving motor (49) coupled to the second roller (47), and a nipping mechanism (60) for nipping the peripheral portion of the substrate (W) with the first roller (46) and the second roller (47). The tape sticking apparatus (10) is configured to cause the second roller (47) to be rotated by use of the roller-driving motor (49) while nipping the peripheral portion of the substrate, held to the substrate holder (21) for sticking, with the first roller (46) and the second roller (47), to thereby rotate the substrate.

A manufacturing apparatus of a semiconductor device includes: a stage; a bonding head, including a mounting tool, a tool heater, and a lifting and lowering mechanism; and a controller performing bonding processing. The controller performs, in the bonding processing: first processing in which, after a chip is brought into contact with a substrate, as heating of the chip is started, the chip is pressurized against the substrate; distortion elimination processing in which, after the first processing and before melting of a bump, the lifting and lowering mechanism is driven in a lifting direction, thereby eliminating distortion of the bonding head; and second processing in which, after the distortion elimination processing, position control is performed on the lifting and lowering mechanism so as to cancel thermal expansion and contraction of the bonding head, thereby maintaining a gap amount at a specified target value.