Semiconductor processing methods and apparatuses are provided. Some methods include providing a first wafer to a processing chamber, the first wafer having a thickness, a beveled edge, a first side, and a plurality of devices formed in a device area on the first side, the device area having an outer perimeter, depositing an annular ring of material on the first wafer, the annular ring of material covering a region of the beveled edge and the outer perimeter of the device area, and having an inner boundary closer to the center point of the first wafer than the outer perimeter, bonding a second substrate to the plurality of devices and to a portion of the annular ring of material, and thinning the thickness of the first wafer.

Described is a semiconductor processing system including a measurement tool configured to measure warpage characteristics in a semiconductor wafer. The semiconductor processing system further includes a pixelated surface configured to retain the semiconductor wafer, where the pixelated surface approximates the warpage characteristics to conform to the semiconductor wafer. The semiconductor processing system further includes a semiconductor processing tool configured to perform processing on the semiconductor wafer while it is retained on the pixelated surface.

A process flow for bonding a die to a substrate incorporates defectivity risk management and yield promotion by reducing flow complexity. In some embodiments, the process flow may include a radiation process on a component substrate to weaken an adhesive bonding of dies from a surface of the component substrate, a first wet clean process on the component substrate after the radiation process to clean die bonding surfaces, eject and pick processes after performing the first wet clean process to remove dies from the component substrate for bonding to a substrate, a plasma activation process on the substrate, a second wet clean process after the plasma activation process on the substrate to clean a substrate bonding surface of the substrate, and a hybrid bonding process to bond die bonding surfaces of the dies to the substrate bonding surface of the substrate.

A control device configured to control a supply condition of a gas which is supplied between two substrates that are to be bonded to each other by a substrate bonding device, is configured to control the supply condition based on a measurement result obtained by a measurement in relation to at least one of the substrate, another substrate bonded before the substrate is bonded, or the substrate bonding device, and the two substrates are bonded to each other by a contact region expanding after the contact region is formed in a center.

A method of trimming a wafer includes securing the wafer on a top surface of a wafer chuck of a wafer edge trimming apparatus, directing a water jet at an edge of the wafer to form a plurality of cracks at uniform intervals along the edge of the wafer, inserting a wedge of a removal module into a first crack of the plurality of cracks, and rotating the wafer, where during the rotation of the wafer, the wedge expands the first crack of the plurality of cracks and removes material from the edge of the wafer.

A wafer positioning ring device includes a polishing ring that has a polishing ring inner surface surrounded by a polishing ring outer surface, a connecting ring that has a connecting ring inner surface surrounded by a connecting ring outer surface, and a positioning unit. The positioning unit includes first positioning members that are disposed on one of the polishing ring outer surface of the polishing ring and the connecting ring inner surface of the connecting ring, and second positioning members that are disposed on another one of the polishing ring outer surface of the polishing ring and the connecting ring inner surface of the connecting ring. The second positioning members and the first positioning members are detachably and respectively connected to each other such that the connecting ring is positioned to the polishing ring.

A manufacturing method of a chip-attached substrate includes preparing a stacked substrate including multiple chips, a first substrate to which the multiple chips are temporarily bonded, and a second substrate bonded to the first substrate with the multiple chips therebetween; and separating the multiple chips bonded to the first substrate and the second substrate from the first substrate to bond the multiple chips to one surface of a third substrate including a device layer.

A substrate processing apparatus configured to process a combined substrate in which a first substrate and a second substrate are bonded to each other includes a holding member configured to hold the combined substrate; a removing member configured to separate at least a peripheral portion of the first substrate from the second substrate by being inserted between the first substrate and the second substrate; an elevating mechanism configured to adjust a relative height position of the removing member with respect to the holding member; and a controller configured to control an operation of the elevating mechanism. The controller controls the operation of the elevating mechanism such that the relative height position of the removing member with respect to a target insertion position of the removing member is adjusted in an entire circumference of the combined substrate.

An apparatus and method for debonding a pair of bonded wafers are disclosed herein. In some embodiments, the debonding apparatus, comprises: a wafer chuck having a preset maximum lateral dimension and configured to rotate the pair of bonded wafers attached to a top surface of the wafer chuck, a pair of circular plate separating blades including a first separating blade and a second separating blade arranged diametrically opposite to each other at edges of the pair of bonded wafers, wherein the first and the second separating blades are inserted between a first and a second wafers of the pair of bonded wafers, and at least two pulling heads configured to pull the second wafer upwardly so as to debond the second wafer from the first wafer.

A grinding apparatus for grinding a wafer includes a chuck table, a grinding unit, an elevating mechanism, a grinding water supply device, a spray nozzle, a thickness measuring device, and a controller to control spraying water from a spray nozzle toward the wafer so as to expand or contract the chuck table via the wafer and thereby changing a height of a holding surface such that warm water is sprayed toward a position, of which thickness value among thickness values measured by the thickness measuring device indicates a thickness greater than a preset target thickness, or a position, of which thickness value indicates a thickness greater than an average value of the thickness values; or cold water is sprayed toward a position, of which thickness value indicates a thickness less than the preset target thickness, or a position, of which thickness value indicates a thickness less than the average value.