A method for forming a pixel package is provided. The method for forming the pixel package includes the following steps: providing a first substrate; transferring a first LED chip and a second LED chip to the first substrate; forming a composite laminate between the first LED chip and the second LED chip; adhering a second substrate to a top surface of the composite laminate; removing the first substrate from back sides of the first LED chip, the second LED chip, and the composite laminate; forming a redistribution layer on the back sides of the first LED chip, the second LED chip, and the composite laminate; and removing the second substrate from the top surface of the composite laminate.

Embodiments are generally directed to package stacking using chip to wafer bonding. An embodiment of a device includes a first stacked layer including one or more semiconductor dies, components or both, the first stacked layer further including a first dielectric layer, the first stacked layer being thinned to a first thickness; and a second stacked layer of one or more semiconductor dies, components, or both, the second stacked layer further including a second dielectric layer, the second stacked layer being fabricated on the first stacked layer.

A microelectronic device is formed to include an embedded die substrate on an interposer; where the embedded die substrate is formed with no more than a single layer of transverse routing traces. In the device, all additional routing may be allocated to the interposer to which the embedded die substrate is attached. The embedded die substrate may be formed with a planarized dielectric formed over an initial metallization layer supporting the embedded die.

A method for fabricating a semiconductor wafer may etch a surface of a silicon substrate to form a first cavity and a second cavity. The method may apply a first dielectric layer to the surface of the silicon substrate, the first cavity, and the second cavity. The method may affix a first die into the first cavity of the silicon substrate. The method may affix a second die into the second cavity of the silicon substrate. The method may apply a second dielectric layer to the surface of the silicon substrate, an exposed surface of the first die, and an exposed surface of the second die. The method may form a redistribution layer over the second dielectric layer, where the redistribution layer is configured to electrically couple the first die to the second die.

Disclosed are a fan-out packaging device and a method of manufacturing the fan-out packaging device, and more particularly a fan-out packaging device using a bridge, the fan-out packaging device including a bridge formed at one side of a fan-out package having two or more dies integrated therein, at least one trace formed at the bridge, and a connection terminal formed at an end of the trace, the connection terminal being in contact with a contact terminal of the fan-out package, wherein the different dies integrated in the fan-out package are electrically connected to each other via the bridge.

A package substrate based on a molding process may include an encapsulation layer, a support frame located in the encapsulation layer, a base, a device located on an upper surface of the base, a copper boss located on a lower surface of the base, a conductive copper pillar layer penetrating the encapsulation layer in the height direction, and a first circuit layer and a second circuit layer over and under the encapsulation layer. The second circuit layer includes a second conductive circuit and a heat dissipation circuit, the first circuit layer and the second conductive circuit are connected conductively through the conductive copper pillar layer, the heat dissipation circuit is connected to one side of the device through the copper boss and the base, and the first circuit layer is connected to the other side of the device.

A patch structure of an integrated circuit package comprises a core having a first side facing downwards and a second side facing upwards. A first solder resist (SR) layer is formed on the first side of the core, wherein the first SR layer comprises a first layer interconnect (FLI) and has a first set of one or more microbumps thereon to bond to one or more logic die. A second solder resist (SR) layer is formed on the second side of the core, wherein the second SR layer has a second set of one or more microbumps thereon to bond with a substrate. One or more bridge dies includes a respective sets of bumps, wherein the one or more bridge dies is disposed flipped over within the core such that the respective sets of bumps face downward and connect to the first set of one or more microbumps in the FLI.

A semiconductor package may include: a package substrate; a base semiconductor chip above the package substrate, the base semiconductor chip including a base pad in contact with the package substrate; at least one stacked semiconductor chip above the base semiconductor chip, the at least one stacked semiconductor chip including a chip pad connected to the package substrate; and an organic layer between the package substrate and the at least one stacked semiconductor chip in a first direction perpendicular to a surface of the package substrate; at least one connection structure in the organic layer, the at least one connection structure connecting the package substrate and the chip pad of the at least one stacked semiconductor chip, wherein the at least one connection structure includes a filling layer and a surface layer surrounding at least a portion of the filling layer.

A fan-out wafer level packaging (FOWLP) unit which includes a substrate, at least one die, a first dielectric layer, at least one conductive pillar, a second dielectric layer, a plurality of first conductive circuits, a first outer protective layer, a third dielectric layer, a plurality of second conductive circuits, and a second outer protective layer is provided. The die is electrically connected with the outside through at least one first bonding pad around a chip area on a second surface of the die. The die is further electrically connected with the outside through a second bonding pad in at least one opening of the second outer protective layer. Both the first conductive circuits and the second conductive circuits are produced by filling a metal paste into slots and grinding the metal paste. Thereby problems of conventional FOWLP technology including higher manufacturing cost and less environmental benefit can be solved.

A package structure and a manufacturing method thereof are provided. The package structure includes a redistribution layer, a conductive element, an active chip, an encapsulation layer, another redistribution layer, and a conductive terminal. The conductive element, the active chip, and the encapsulation layer are disposed on the redistribution layer and the encapsulation layer surrounds the conductive element and the active chip. The another redistribution layer is disposed on the conductive element, the active chip and the encapsulation layer and electrically connected to the redistribution layer through the conductive element.