An automatic teaching system for a substrate processing apparatus, the automatic teaching system comprising a frame having a workpiece load station with a predetermined load station reference location, a robot transport mounted to the frame and having a movable transport arm with an end effector having a predetermined end effector reference location, and a drive section driving the movable transport arm in at least one degree of freedom motion relative to the frame, a machine vision system including both at least one fixed imaging sensor and at least one movable imaging sensor removably connected to the frame and configured to image at least one target of the machine vision system, a load jig disposed for removable engagement with the workpiece load station, with both the at least one fixed imaging sensor and the at least one movable imaging sensor mounted to the load jig, the fixed imaging sensor.

There is included providing a substrate in a process chamber; and forming a film on the substrate in the process chamber by supplying an inert gas from a first supplier, supplying a first processing gas from a second supplier, and supplying an inert gas from a third supplier to the substrate, the third supplier being installed at an opposite side of the first supplier with respect to a straight line that passes through the second supplier and a center of the substrate and is interposed between the first supplier and the third supplier, to the substrate, wherein in the act of forming the film, a substrate in-plane film thickness distribution of the film is adjusted by controlling a balance between a flow rate of the inert gas supplied from the first supplier and a flow rate of the inert gas supplied from the third supplier.

A method for providing a substrate coating comprises transferring a substrate to an enclosed ink jet printing system; printing organic material in a deposition region of the substrate using the enclosed ink jet printing system, the deposition region comprising at least a portion of an active region of a light-emitting device on the substrate; loading the substrate with the organic material deposited thereon to an enclosed curing module; supporting the substrate in the enclosed curing module, the supporting the substrate comprising floating the substrate on a gas cushion established by a floatation support apparatus; and while supporting the substrate in the enclosed curing module, curing the organic material deposited on the substrate to form an organic film layer.

A substrate processing method includes: transferring, by a first transfer arm, a wafer lot including a plurality of substrates to a processing bath in which the plurality of substrates in the wafer lot are immersed and processed collectively; receiving, by a second transfer arm, the wafer lot from the first transfer arm, and immersing the wafer lot in an immersion bath in which the plurality of substrates in the wafer lot are immersed collectively; and transferring, by a third transfer arm, the plurality of substrates in the wafer lot to a delivery table one by one. The immersion bath is disposed outside a movement range of the first transfer arm such that the first transfer arm is operated independently from the third transfer arm.

A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.

Methods and apparatus for bonding chiplets to substrates are provided herein. In some embodiments, a multi-chamber processing tool for processing substrates includes: an equipment front end module (EFEM) having one or more loadports for receiving one or more types of substrates; and a plurality of automation modules coupled to each other and having a first automation module coupled to the EFEM, wherein each of the plurality of automation modules include a transfer chamber and one or more process chambers coupled to the transfer chamber, wherein the transfer chamber includes a buffer, and wherein the transfer chamber includes a transfer robot configured to transfer the one or more types of substrates, wherein at least one of the plurality of automation modules include a bonder chamber and at least one of the plurality of automation modules include a wet clean chamber.

Apparatus and techniques are described herein for use in manufacturing electronic devices, such as can include organic light emitting diode (OLED) devices. Such apparatus and techniques can include using one or more modules having a controlled environment. For example, a substrate can be received from a printing system located in a first processing environment, and the substrate can be provided a second processing environment, such as to an enclosed thermal treatment module comprising a controlled second processing environment. The second processing environment can include a purified gas environment having a different composition than the first processing environment.

A method for calibration including determining a temperature induced offset in a pedestal of a process module under a temperature condition for a process. The method includes delivering a wafer to the pedestal of the process module by a robot, and detecting an entry offset. The method includes rotating the wafer over the pedestal by an angle. The method includes removing the wafer from the pedestal by the robot and measuring an exit offset. The method includes determining a magnitude and direction of the temperature induced offset using the entry offset and exit offset.

Disclosed are various systems that allow for plasma delivery from a central location in a multi-station processing chamber to be redirected to different processing stations within the chamber. Such systems may include a deflector plate that is mounted to a wafer indexer such that the deflector plate is centered on the wafer indexer. In other implementations, such systems may include a deflector plate that is mounted in a fixed relationship with a ceiling of the processing chamber. The deflector plate may have a body having a top surface and an underside surface that are on opposite sides of the body. A plurality of recesses may be arranged across the top surface in a radial pattern around a center axis.

A method of processing a wafer includes forming a bonded wafer assembly by bonding one of opposite surfaces of a first wafer to a second wafer, the first wafer having a device region and an outer circumferential excessive region, applying a laser beam to the first wafer while positioning a focused spot of the laser beam radially inwardly from the outer circumferential edge of the first wafer, on an inclined plane that is progressively closer to the one of the opposite surfaces of the first wafer toward the outer circumferential edge, thereby forming a separation layer shaped as a side surface of a truncated cone, grinding the first wafer from the other one of the opposite surfaces thereof to thin down the first wafer to a predetermined thickness, and detecting whether or not the outer circumferential excessive region has been removed from the first wafer.