Disclosed are a semiconductor photoresist composition and a method of forming patterns using the same, the semiconductor photoresist composition including a polymer including a structural unit including at least one azide functional group; a single molecular compound including a CH moiety; and a solvent.

A substrate processing method according to the present invention incudes: a preparation step of preparing a substrate in which at least a first surface containing silicon oxide and a second surface containing silicon or a silicon compound other than silicon oxide are exposed; a surface modification step of forming an etching selectivity imparting film on at least a part of the first surface and at least a part of the second surface by a silylation treatment of bringing a silylating agent into contact with the first surface and the second surface; and an etching step of selectively carrying out an etching treatment on the second surface with respect to the first surface using an etching agent after the surface modification step.

Provided is a method for manufacturing a semiconductor device, in which a mask layer, a buffer layer, and a first mandrel layer are sequentially stacked on a substrate including a first region and a second region. First mandrel patterns are formed on the buffer layer in the first region, and a second mandrel pattern covering the buffer layer in the second region is formed. A first spacer contacting side walls of the first mandrel pattern and the second mandrel pattern is formed on the buffer layer. The first mandrel patterns are removed. A buffer layer pattern and a preliminary mask pattern are formed on the substrate. The second mandrel pattern is removed. In addition, a mask pattern is formed. The buffer layer includes a material having lower electrical conductivity than the mask layer and having etching selectivity with respect to the mask layer.

A technique improves etch selectivity. An etching includes (a) providing, in a chamber, a substrate including an underlying film and a silicon-containing film on the underlying film, (b) etching the silicon-containing film to form a recess with first plasma generated from a first process gas containing a hydrogen fluoride gas until before the underlying film is exposed at the recess or until the underlying film is partly exposed at the recess, and (c) further etching the silicon-containing film at the recess under a condition different from a condition of (b).

A method of providing access to a contact pad located on a base polyimide layer of an electronic part comprises (i) covering the contact pad and the base polyimide layer with a cover layer comprised of a metallic mask layer, a polyimide layer, and an adhesive layer. The adhesive layer attaches the cover layer to the contact pad and the base polyimide layer. The metallic mask layer is exposed. The method further includes (ii) removing a portion of the metallic mask layer of the cover layer directly above the contact pad, and (iii) through the removed portion of the metallic mask layer, using a plasma-etching process to create an access opening to the contact pad through the polyimide layer and the adhesive layer.

A method for performing a feedback sequence for patterning CD control. The method including performing a series of process steps on a wafer to obtain a plurality of features, wherein a process step is performed under a process condition. The method including measuring a dimension of the plurality of features after performing the series of process steps. The method including determining a difference between the dimension that is measured and a target dimension for the plurality of features. The method including modifying the process condition for the process step based on the difference and a sensitivity factor for the plurality of features relating change in dimension and change in process condition.

A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.

An exemplary method according to the present disclosure includes forming a first dielectric layer over a first conductive feature, forming a second dielectric layer over the first dielectric layer, forming a patterned mask over the second dielectric layer, performing a first etching process to form a trench extending through the first dielectric layer and the second dielectric layer to expose a top surface of the first conductive feature, where etchant of the first etching process modifies a portion of the first dielectric layer exposed by the trench, performing a second etching process to remove the patterned mask and the modified portion of the first dielectric layer, where etchant of the second etching process further reacts with a part of a remaining portion of the first dielectric layer to cause a volume expansion of the remaining portion of the first dielectric layer, and forming a second conductive feature in the trench.

Provided is a method of manufacturing a semiconductor device, the method including forming a first mold structure and a second mold structure on a semiconductor structure, the second mold structure being spaced apart from the first mold structure in a horizontal direction, the first mold structure including first insulating films and second insulating films different from the first insulating films alternately stacked one-by-one, and the second mold structure including a third insulating film including a material same as a material of each of the first insulating films, forming a mask pattern on the first mold structure and the second mold structure, and etching, using a first etching gas, the first mold structure and the second mold structure based on the mask pattern, wherein the first etching gas includes oxygen-containing fluorocarbon.

A semiconductor device includes: a substrate including a component area and an edge area at least partially surrounding an outer perimeter of the component area; an upper insulating layer disposed on a first surface of the substrate; a recess formed in the upper insulating layer and extends downward along an outermost perimeter of the substrate in the edge area; and a trench formed in the upper insulating layer between the component area and the recess, and recessed downward beyond the recess, in the edge area.