A method of fabricating an electronic device including fabricating a multilevel package substrate with first, second, third, and fourth levels, a semiconductor die mounted to the first level, and fabricating a conductor backed coplanar waveguide transmission line feed with an interconnect and a conductor, the interconnect including coplanar first, second, and third conductive lines extending in the first level along a first direction from respective ends to an antenna, the second and third conductive lines spaced apart from opposite sides of the first conductive line along an orthogonal second direction, and the conductor extending in the third level under the interconnect and under the antenna.

A semiconductor package includes a memory die stack having a clock signal shared by lower and upper bytes. Each of a plurality of memory dies constituting the memory die stack of the semiconductor package includes a first clock circuit configured to generate a read clock signal for a lower byte and an upper byte constituting a data width of the memory die, and a plurality of first die bond pads corresponding to the number of ranks of a memory system including the memory die, and each of the plurality of first die bond pads is set for each rank. The first clock circuit is connected to, among the plurality of first die bond pads, a die bond pad corresponding to a rank to which the memory die belongs.

An interconnect structure includes a plurality of first pads, a plurality of second pads, and a plurality of conductive lines. The first pads are arranged to form a first column-and-row array, and the second pads are arranged to form a second column-and-row array. The first column-and-row array, the second column-and-row array and the conductive lines are disposed in a same layer. The first pads in adjacent rows in the first column-and-row array are separated from each other by a first vertical distance from a plan view, the second pads in adjacent rows in the second column-and-row array are separated from each other by a second vertical distance from the plan view. A sum of widths of the conductive lines electrically connecting the first pads and the second pads in the same row is less than the first vertical distance and the second vertical distance from the plan view.

Disclosed herein is an electronic component that includes a mounting surface having a terminal formation area and a plurality of terminal electrodes arranged in an array in the terminal formation area. The center point of the terminal formation area is offset with respect to the center point of the mounting surface. Thus, at mounting of the electronic component on a mounting substrate, a solder paste is supplied to a land pattern, and then the mounting is performed such that the center point of a mounting area and the center point of the mounting surface coincide with each other, whereby a predetermined displacement occurs between the planar positions of the land pattern and terminal electrode. This allows a void inside the solder to be released outside without involving a layout change of the land pattern.

Methods of making a semiconductor device assembly are provided. The methods can comprise providing a first semiconductor device having a first dielectric material at a first surface, providing a carrier wafer having a second dielectric material at a second surface, and forming a dielectric-dielectric bond between the first dielectric material and the second dielectric material. At least one of the first surface and the second surface includes a region of hydrophobic material electrically isolated from any circuitry of the first semiconductor device and configured to have a reduced bonding strength to a facing region relative to the dielectric-dielectric bond. The method can further include stacking one or more second semiconductor devices over the first semiconductor device to form the semiconductor device assembly, and removing the semiconductor device assembly from the carrier wafer.

Provided is a semiconductor package including a three-dimensional (3D) stacked structure in which an upper second semiconductor chip is stacked on a lower first semiconductor chip. In the semiconductor package, a power distribution network for the first semiconductor chip and a power distribution network for the second semiconductor chip are implemented through circuits of the first semiconductor chip and separated from the first semiconductor chip.

A memory device includes a substrate, a gate line contact electrically connected to a gate line selected from among the gate lines, a conductive wiring structure connected to the gate line contact, and bonding pads arranged on the conductive wiring structure. The bonding pads include a first bonding pad, a second bonding pad, a third bonding pad apart from the first bonding pad in the first horizontal direction, and a fourth bonding pad apart from the first bonding pad in a second horizontal direction perpendicular to the first horizontal direction. The conductive wiring structure electrically connects the first bonding pad and the second bonding pad to the gate line contact, and the second bonding pad is arranged diagonally between the first horizontal direction and the second horizontal direction with respect to the first bonding pad.

An IC structure includes a memory stack including a plurality of semiconductor die. The semiconductor memory dies horizontally separate with each other, wherein each semiconductor die includes a top surface, a bottom surface, four sidewalls with a first sidewall, a second sidewall, a third sidewall and a fourth sidewall, and a plurality of edge pads located on the first sidewall and arranged in multiple rows or two dimensions. The area of the bottom surface or the top surface is larger than that of any sidewall. A first part of the plurality of edge pads is located within an upper portion of the first sidewall of the semiconductor die, a second part of the plurality of edge pads is located within a lower portion of the first sidewall of the semiconductor die. One the semiconductor die includes at least one thermal edge portion exposed from the second sidewall.

A semiconductor structure includes an interposer that includes: a substrate; a redistribution structure (RDS) on the substrate; a passivation film on the RDS, where the passivation film includes a first etch stop layer (ESL) on the RDS and a first dielectric layer on the first ESL; a via embedded in the passivation film, where the via is electrically coupled to a conductive feature of the RDS; a bonding film on the passivation film, where the bonding film includes a second ESL on the passivation film and a second dielectric layer on the second ESL; and a bonding pad and a first dummy bonding pad that are embedded in the bonding film, where the bonding pad is electrically coupled to the via, and the first dummy bonding pad is electrically isolated; and a die attached to the interposer, where a die connector of the die is bonded to the bonding pad.

A semiconductor die includes: a main body including a top surface and a bottom surface; a plurality of first bonding pads disposed on the top surface; and a plurality of second bonding pads disposed on the bottom surface. When viewed in a direction perpendicular to the top surface or the bottom surface, the plurality of first bonding pads are disposed at positions that match positions to which the plurality of second bonding pads are shifted in a plane of the bottom surface while maintaining a positional relationship between the plurality of second bonding pads. The main body includes a first inter-die interface circuit and a second inter-die interface circuit. The plurality of first bonding pads are connected to the first inter-die interface circuit, and the plurality of second bonding pads are connected to the second inter-die interface circuit.