A method for manufacturing a power device fabrication panel includes aligning a first alignment mark in a lead frame of a power device substrate array with a second alignment mark in a bonding fixture. The power device substrate array includes a plurality of power device pockets, the bonding fixture includes a plurality of power device openings, and the power device openings are in assembly alignment with the power device pockets when the first alignment mark is aligned with the second alignment mark. And with the bonding fixture power device openings in assembly alignment with the power device pockets of the power device substrate array, a plurality of power devices are moved at least partially through the aligned power device openings and into the power device pockets where they are bonded.

A display device includes: a substrate; a plurality of pixel columns on the substrate, each of the plurality of pixel columns including a plurality of pixel groups each including a first pixel and a second pixel arranged along a first direction; and a bank enclosing a perimeter of each of the plurality of pixel groups, the bank including a first opening corresponding to each of the plurality of pixel groups, and a second opening located between two pixel groups adjacent to each other in the first direction among the plurality of pixel groups.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface with first conductive contacts and an opposing second surface with second conductive contacts, in a first layer; a die attach film (DAF), at the first surface of the first die, including through-DAF vias (TDVs), wherein respective ones of the TDVs are electrically coupled to respective ones of the first conductive contacts; a conductive pillar in the first layer; and a second die, in a second layer on the first layer, wherein the second die is electrically coupled to the second conductive contacts on the second surface of the first die and electrically coupled to the conductive pillar.

A semiconductor package method includes: providing a first carrier board, forming a first molding layer covering the upper surface of the first carrier board and the bridge chip after bonding an upper insulation layer of the bridge chip on the upper surface of the first carrier board; thinning the first molding layer and the lower insulation layer, and forming a first redistribution layer on the surfaces of the thinned first molding layer and lower insulation layer, the process for forming the first redistribution layer includes an electroplating process; thinning the upper insulation layer and the first molding layer, forming a second redistribution layer on the surfaces of the thinned upper insulation layer and first molding layer, and the process for forming the second redistribution layer includes an electroplating process; and providing a semiconductor chip, mounting the semiconductor chip on the upper surface of the second redistribution layer, and the semiconductor chip being electrically connected with the second redistribution layer.

A method includes dispensing sacrificial region over a carrier, and forming a metal post over the carrier. The metal post overlaps at least a portion of the sacrificial region. The method further includes encapsulating the metal post and the sacrificial region in an encapsulating material, demounting the metal post, the sacrificial region, and the encapsulating material from the carrier, and removing at least a portion of the sacrificial region to form a recess extending from a surface level of the encapsulating material into the encapsulating material.

An embodiment is a method including forming a first interconnect structure over a first substrate, forming a redistribution via over the first interconnect structure, the redistribution via being electrically coupled to at least one of the metallization patterns of the first interconnect structure, forming a redistribution pad over the redistribution via, the redistribution pad being electrically coupled to the redistribution via, forming a first dielectric layer over the redistribution pad, and forming a second dielectric layer over the first dielectric layer. The method also includes patterning the first and second dielectric layers, forming a bond via over the redistribution pad and in the first dielectric layer, the bonding via being electrically coupled to the redistribution pad, the bond via overlapping the redistribution via, and forming a first bond pad over the bonding via and in the second dielectric layer, the first bond pad being electrically coupled to the bond via.

A method of manufacturing a semiconductor device is provided. The method includes forming a redistribution layer (RDL) over a semiconductor die, a portion of the RDL contacting a die pad of the semiconductor die. A non-conductive layer is formed over the RDL. An opening in the non-conductive layer is formed exposing a portion of the RDL. A plurality of plateau regions is formed in the non-conductive layer. A cavity region in the non-conductive layer separates each plateau region of the plurality of plateau regions. A metal layer is deposited over the non-conductive layer and exposed portion of the RDL and etched to expose the plurality of plateau regions through the metal layer. The cavity region remains substantially filled by a portion of the metal layer.

In accordance with various embodiments of the present disclosure, a fan-out wafer-level chip scale package is provided that comprises a semiconductor die having a top side with an active layer, an opposing bottom side, and four peripheral sides; a molding compound surrounding the peripheral sides of the semiconductor die; a redistribution layer at least partially embedded in a dielectric layer and providing a plurality of electrical connections to the semiconductor die; a plurality of solder balls on the redistribution layer, each of the plurality of solder balls providing an electrical connection to a corresponding connection point of the semiconductor die; and a first conductive wall embedded in the molding compound adjacent and substantially parallel to a first one of the peripheral sides of the semiconductor die, the first conductive wall having a top edge in electrical contact with the redistribution layer.

A semiconductor package and a manufacturing method thereof are described. The semiconductor package includes a package having dies encapsulated by an encapsulant, a redistribution circuit structure, first and second modules and affixing blocks. The redistribution circuit structure is disposed on the package. The first and second modules are disposed on and respectively electrically connected to the redistribution circuit structure by first and second connectors disposed there-between. The first and second modules are adjacent to each other and disposed side by side on the redistribution circuit structure. The affixing blocks are disposed on the redistribution circuit structure and between the first and second modules and the redistribution circuit structure. The affixing blocks include first footing portions located below the first module, second footing portions located below the second module, and exposed portions exposed from the first and second modules. The affixing blocks join the first and second modules to the redistribution circuit structure.

The present invention provides a 3D integrated circuit structure formed by stacking semiconductor structures. The semiconductor structures form a multi-die heterogeneous 3D packaging by direct bonding the bonding pads of re-distribution layers. The same or different dies are used to produce the semiconductor structures through the back-end packaging process, and then hybrid bonding technology is used to stack and interconnect the semiconductor structures. The position of the bonding pad can be redefined by re-distribution layer, thereby overcoming the limitations of chip bonding pad position, chip size and quantity.