Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.

Apparatus and methods for determining wafer characters are disclosed. In one example, an apparatus is disclosed. The apparatus includes: a processing tool configured to process a semiconductor wafer; a device configured to read an optical character disposed on the semiconductor wafer while the semiconductor wafer is located at the apparatus for wafer fabrication; and a controller configured to determine whether the optical character matches a predetermined character corresponding to the semiconductor wafer based on the optical character read in real-time at the apparatus.

The present disclosure relates to a substrate transfer method and apparatus which controls a substrate transfer robot using position information of a substrate, when the substrate is loaded or unloaded in the substrate transfer apparatus including the substrate transfer robot. When an operation of setting a new reference value due to a change in process or hardware after setting the initial reference value for loading or unloading the substrate is requested, the substrate transfer method and apparatus can automatically perform the reference value setting operation. Therefore, the substrate transfer method and apparatus can transfer the substrate such that the substrate is located in the center of the susceptor, even though the reference value of the substrate transfer robot is not manually changed.

There is provided a substrate processing apparatus with improved throughput by reconsidering a configuration of an apparatus including a batch type module and a single wafer type module. In a single wafer processing region according to single wafer processing of a processing block of the present invention, a buffer unit to and from which both a first transfer mechanism HTR and a center robot can hand over and receive a substrate(s) is provided. Therefore, the first transfer mechanism can collectively hand over and receive processed substrates and unprocessed substrates via the buffer unit. Therefore, a potential of the first transfer mechanism is drawn out, and the substrate processing apparatus having a high throughput can be provided.

To obtain a wafer transfer device that can suppress a rise in the temperature of the inside of a wafer transfer chamber by reducing a system resistance without changing the size of the wafer transfer chamber, the present invention provides a wafer transfer device including a wafer transfer chamber including a robot configured to transfer a wafer between a FOUP configured to house the wafer and a processing chamber configured to process the wafer, a door installed for a human to enter and exit from an inside of the wafer transfer chamber, and a fan and filter unit (FFU) chamber installed above the wafer transfer chamber and configured to feed inert gas into the wafer transfer chamber, a return flow passage for the inert gas being formed in a column constituting the wafer transfer chamber and being formed by hollowing the column, to make the FFU chamber and the wafer transfer chamber communicate with each other, and a duct being provided on the wafer transfer chamber side of the door and configured such that the inert gas in the wafer transfer chamber passes through the duct and flows into the FFU chamber when the door is in a closed state.

An apparatus for treating a substrate of the present invention includes a buffer unit, an inversion unit, a first transfer chamber, a second transfer chamber, a first cleaning chamber, and a second cleaning chamber. The first transfer chamber, the inversion unit, and the second transfer chamber are sequentially arranged in one direction. The first cleaning chamber is disposed at one side of the first transfer chamber, and the second cleaning chamber is disposed at one side of the second transfer chamber. A first main transfer robot provided in the first transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the first cleaning chamber. The second main transfer robot provided in the second transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the second cleaning chamber.

A gas pressure driving device includes a first driving shaft that drives a driven body in a first direction by a pressure of a gas, and a second driving shaft that drives the driven body in a second direction intersecting with first direction by the pressure of the gas. The first driving shaft drives the driven body in the first direction by the gas supplied through an inside of the first driving shaft and the second driving shaft.

There is provided a substrate processing apparatus for processing a substrate, the substrate processing apparatus including: a first processing module group including a plurality of first processing modules; a plurality of first transfer modules, each first transfer module being connected to a respective one of the plurality of first processing modules; a second processing module group including a plurality of second processing modules; and a plurality of second transfer modules, each second transfer module being connected to a respective one of the plurality of second processing modules. The plurality of first transfer modules are disposed above the plurality of second processing modules, and the plurality of second transfer modules are disposed below the plurality of first processing modules.

A substrate processing apparatus includes a loading and unloading unit having a first side surface through which a container accommodating a substrate is loaded and unloaded, and a second side surface opposite to the first side surface, a substrate transport unit extending along a first horizontal direction perpendicular to the second side surface, and a plurality of batch processing units adjacent to one another along a longitudinal direction of the substrate transport unit. Each of the plurality of batch processing units includes a processing container configured to accommodate and process a plurality of substrates, a gas supply unit configured to supply a gas into the processing container, and an exhaust unit configured to exhaust the gas inside the processing container. A first maintenance area, used for attending to a maintenance of the plurality of batch processing units, is provided above the exhaust unit.

A substrate transfer device includes a housing accommodating a carrier for storing a substrate, a carrier lifter moving the carrier in a vertical direction relative to an upper surface of the housing, a vertical stabilization unit connected to a lower part of the carrier lifter and reducing a vertical vibration of the carrier, a rotation stabilization unit connected to a lower part of the vertical stabilization unit and reducing rotation of the carrier, and a carrier holder connected to a lower part of the rotation stabilization unit. The carrier holder holds the carrier. The vertical stabilization unit includes an upper plate connected to the carrier lifter, a lower plate connected to the rotation stabilization unit, and a buffer disposed between the upper plate and the lower plate. The buffer contracts or relaxes to reduce the vertical vibration of the carrier.