Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.

A substrate loading apparatus includes a pickup apparatus configured to move a magazine in a first direction, a second direction and a third direction, an elevator defining a plurality of waiting spaces, a stage configured to support the magazine, and an insert apparatus configured to transfer substrates in the magazine. At least one of the plurality of waiting spaces of the elevator is configured to selectively receive the magazine, and the pickup apparatus is spaced apart from the elevator and the stage in the third direction.

A substrate processing method includes: transferring, by a first transfer arm, a wafer lot including a plurality of substrates to a processing bath in which the plurality of substrates in the wafer lot are immersed and processed collectively; receiving, by a second transfer arm, the wafer lot from the first transfer arm, and immersing the wafer lot in an immersion bath in which the plurality of substrates in the wafer lot are immersed collectively; and transferring, by a third transfer arm, the plurality of substrates in the wafer lot to a delivery table one by one. The immersion bath is disposed outside a movement range of the first transfer arm such that the first transfer arm is operated independently from the third transfer arm.

Substrates are immersed in a treatment fluid stored in a treatment chamber, and subjected to a surface treatment. A first lid and a second lid cover an upper opening of the treatment chamber. The first lid and the second lid each include sloped surfaces. At least a part of the first lid and the second lid is immersed in the treatment fluid. During the treatment on the substrates, a plurality of bubble supply pipes eject bubbles into the treatment fluid. The sloped surfaces formed on the first lid and the second lid guide the bubbles reaching an interface between the treatment fluid, the first lid, and the second lid diagonally upward. Thus, the bubbles are smoothly released outside the treatment chamber. This can eliminate retention of the bubbles, avoid contacts between the bubbles and the substrates, and suppress a decrease in the treatment uniformity.

A batch processing oven includes a processing chamber, a magnet, and a rack. The processing chamber includes a gas inlet on a first side and a gas outlet on a second side opposite the first side, the gas inlet is configured to direct a hot gas into the processing chamber and the gas outlet is configured to exhaust the convective energy in parallel with the radiative energy from the walls. The magnet is arranged such that its north pole will be formed on the first side of the processing chamber and its south pole will be formed on the second side of the processing chamber. The rack is configured to be positioned between the first and second ends of the processing chamber and is configured to support a plurality of vertically spaced-apart substrates.

A substrate processing apparatus includes a loading and unloading unit having a first side surface through which a container accommodating a substrate is loaded and unloaded, and a second side surface opposite to the first side surface, a substrate transport unit extending along a first horizontal direction perpendicular to the second side surface, and a plurality of batch processing units adjacent to one another along a longitudinal direction of the substrate transport unit. Each of the plurality of batch processing units includes a processing container configured to accommodate and process a plurality of substrates, a gas supply unit configured to supply a gas into the processing container, and an exhaust unit configured to exhaust the gas inside the processing container. A first maintenance area, used for attending to a maintenance of the plurality of batch processing units, is provided above the exhaust unit.

There is provided a technique that includes: a boat including plural slots to hold at least one substrate; a process furnace that processes the at least one substrate held in the boat; a boat elevator that raises and lowers the boat; a transfer device that transfers the at least one substrate between plural carriers where the at least one substrate is stored and the boat; and a controller capable of controlling the boat elevator and the transfer device, wherein the controller sets plural positions where the transfer device transfers the at least one substrate to the boat elevator, and select the positions to minimize a number of shifts among the positions of the boat elevator or total time taken during the shifts.

A substrate treating apparatus includes a batch-type processing unit configured to perform treatment on a plurality of substrates, a single-wafer-type processing unit configured to perform treatment on one substrate of the substrates at a time, a posture turning unit configured to turn and change the orientation of the substrates to be processed by the batch-type processing unit, while the substrates are wetted with deionized water, a first transport unit that transports the substrates, processed by the batch-type processing unit, to the posture turning unit, a second transport unit that transports the substrates turned horizontally by the posture turning unit to enable them to be subjected to treatment with the hand unit and a cleaning and drying unit configured to perform cleaning and drying treatment at the hand unit.

A substrate processing apparatus that performs processing on a substrate which is accommodated in a cassette and is to be transferred, includes: at least one transfer block configured to transfer the substrate in an interior of the at least one transfer block; at least one substrate processing module configured to perform the processing on the substrate; and a cassette transfer mechanism configured to transfer the cassette between a delivery position set on an outer surface of the substrate processing apparatus and a loading/unloading position at which the cassette is loaded into and unloaded from an interior of the substrate processing apparatus. The cassette transfer mechanism includes a stage on which the cassette is placed, and a moving mechanism configured to move the cassette placed on the stage.

Provided is a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing on a plurality of substrates in a process chamber defining a plurality of processing spaces. The substrate processing apparatus includes a process chamber in which N processing spaces are defined to process substrates, N gas injection units installed above the process chamber to respectively correspond to the N processing spaces, N substrate supports that face the gas injection units and support the substrates, a transfer support installed in the process chamber to support the substrates, a rotation support which is installed between the adjacent substrate supports that are substrate transfer paths according to rotation driving of the transfer support and on which the substrates are seated to be rotated about a vertical second rotation axis passing through the substrates.