An etching method according to the present invention includes after a step of creating a reduced pressure state, a step of supplying an etching gas containing hydrogen fluoride into a processing chamber and etching a coating film formed on a substrate, after the step of etching the coating film, a step of cleaning the substrate by supplying vapor into the processing chamber, and in the step of cleaning the substrate, a step of detecting SiF stretching vibration in the substrate by infrared spectroscopy, in which the step of cleaning the substrate ends when the SiF stretching vibration equal to or lower than a predetermined first threshold value is detected. Therefore, the time required for cleaning the substrate is prevented from being unnecessarily long.

A substrate processing apparatus includes a substrate holder, a rotational driving unit, a cover body, a transfer mechanism, a cleaning liquid supply and a controller. The substrate holder is configured to hold a substrate. The rotational driving unit is configured to rotate the substrate holder. The cover body is configured to cover a top surface of the substrate held by the substrate holder. The transfer mechanism is configured to transfer a cleaning jig to the substrate holder. The cleaning liquid supply is configured to supply a cleaning liquid toward a bottom surface of the cleaning jig held by the substrate holder. The controller is configured to control the rotational driving unit to rotate the substrate holder. The cleaning jig is provided with at least one hole through which the cleaning liquid discharged from the cleaning liquid supply passes toward the cover body.

Embodiments of the present disclosure relate to modular flow chamber kits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing. In one or more embodiments, a processing chamber includes a chamber body at least partially defining a processing volume. The chamber body includes a plurality of inject passages arranged in a plurality of flow levels, and one or more exhaust passages formed in the chamber body. The processing chamber includes one or more heat sources operable to heat the processing volume, a substrate support disposed in the processing volume, and a plate spaced from the substrate support. The substrate support and the plate are movable by at least one flow level of the plurality of flow levels to align the substrate support between one or more first inject passages of a first flow level and one or more second inject passages of a second flow level.

Provided is an apparatus for processing a substrate, the apparatus including: a liquid treatment chamber; a drying chamber; and a light treatment chamber, in which the light treatment chamber includes: a treatment housing having a treatment space in which the substrate is processed; a support member for supporting the substrate in the treatment space; a light source for irradiating the substrate supported on the support member with light in the form of pulses; and a light filter for selecting a set range of wavelengths of the light generated by the light source and allowing the selected wavelengths to pass through.

A substrate processing method according to an aspect of the present disclosure includes performing a batch processing to process a plurality of substrates at once, performing a single-substrate processing to process the plurality of substrate one by one after the batch processing, identifying a position of a cutout provided on an outer periphery of a substrate subjected to the batch processing, and rotating the substrate such that the identified position of the cutout reaches a first position. The performing the single-substrate processing includes drying the substrate, and the rotating the substrate is performed before the drying the substrate.

The present disclosure relates to a contamination controlled semiconductor processing system. The contamination controlled semiconductor processing system includes a processing chamber, a contamination detection system, and a contamination removal system. The processing chamber is configured to process a wafer. The contamination detection system is configured to determine whether a contamination level on a surface of the door is greater than a baseline level. The contamination removal system is configured to remove contaminants from the surface of the door in response to the contamination level being greater than the baseline level.

Embodiments of the present disclosure relate to multi-flow gas circuits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing. In one or more embodiments, a processing chamber includes a chamber body, one or more heat sources, and a gas circuit in fluid communication with the chamber body. The gas circuit includes a first flow controller and a first set of valves in fluid communication with the first flow controller. The first set of valves are in fluid communication with a first set of inject passages. The gas circuit includes a second flow controller and a second set of valves in fluid communication with the second flow controller. The second set of valves is in fluid communication with a second set of inject passages. The second set of inject passages and the first set of inject passages alternate with respect to each other along the plurality of flow levels.

Embodiments of the present disclosure generally relate to mass arrangements for lift frames, and related substrate processing chambers, chamber kits, and methods. In one or more embodiments, a processing chamber includes a chamber body including a plurality of gas inject passages formed in the chamber body. The chamber body at least partially defines an internal volume. The processing chamber includes a substrate support assembly positioned in the internal volume. The substrate support assembly includes a lift frame. The lift frame includes a plurality of arms and a ring supported by the plurality of arms. The lift frame includes a plurality of sections azimuthally spaced from each other. The plurality of sections have a different transmissivity than the ring.

A substrate treating apparatus includes a batch-type processing unit configured to perform treatment on a plurality of substrates, a single-wafer-type processing unit configured to perform treatment on one substrate of the substrates at a time, a posture turning unit configured to turn and change the orientation of the substrates to be processed by the batch-type processing unit, while the substrates are wetted with deionized water, a first transport unit that transports the substrates, processed by the batch-type processing unit, to the posture turning unit, a second transport unit that transports the substrates turned horizontally by the posture turning unit to enable them to be subjected to treatment with the hand unit and a cleaning and drying unit configured to perform cleaning and drying treatment at the hand unit.

Provided is a method of processing a substrate, the method including: a pressure increasing operation of increasing a pressure of a treatment space to a first set pressure after the substrate is loaded into the treatment space; after the pressure increasing operation, a treating operation of processing the substrate; and after the treating operation, a pressure reducing operation of reducing a pressure of the treatment space, in which the pressure increasing operation includes increasing a pressure of the treatment space by supplying only a supercritical fluid between the supercritical fluid and the organic solvent to the treatment space, and the treating operation includes supplying a mixed fluid obtained by dissolving the organic solvent in the supercritical fluid to the treatment space.