A substrate processing system includes a coating apparatus configured to coat a photoresist film on a semiconductor substrate, an exposure apparatus configured to irradiate light onto the photoresist film to form a photoresist pattern region, a developing system configured to remove an unnecessary region from the photoresist film except for the photoresist pattern region to form a photoresist pattern, the developing system including a wet developing apparatus and a dry developing apparatus, the wet developing apparatus configured to remove the unnecessary region using a developing solution, the dry developing apparatus configured to remove the unnecessary region using a developing gas, a cleaning apparatus including a cleaning chamber and configured to remove an edge bead of the photoresist film or the photoresist pattern on an edge region of the semiconductor substrate, and a heating apparatus configured to heat the photoresist film or the photoresist pattern.

A substrate processing apparatus is disclosed that includes a first chamber having a first internal pressure, a second chamber connected to the first chamber and having a second internal pressure greater than the first internal pressure, a transfer mechanism located in the second chamber and configured to transfer a substrate, and a blower located in the second chamber and configured to blow air to the substrate.

A substrate processing apparatus includes a substrate having first points and second points different from the first points, a measurement module configured to measure at least one thickness of the substrate, a substrate processor configured to perform a planarization process on the substrate, and a controller configured to control the substrate processor based on thickness information of the substrate measured by the measurement module. The controller is configured to control the substrate processor to planarize the first points based on first thickness information of the substrate including first thicknesses measured at the first points and to control the substrate processor to planarize the second points based on second thickness information of the substrate including second thicknesses measured at the second points.

A jig includes a disc body, a fixation pin, and a verification pin. The disc body has a first surface, an opposite a second surface, and a thickness separating the first surface from the second surface. A fixation aperture and a verification aperture extend through the thickness of the disc body and couple the first surface to the second surface of the disc body, the fixation aperture located radially outward of the verification aperture. The fixation pin is arranged to be slidably received within the fixation aperture to fix the disc body to an end effector within the semiconductor processing system. The verification pin is arranged to be slidably received within the verification aperture and supported by the disc body to indicate misregistration between the disc body and a load lock in the semiconductor processing system.

A system includes a plurality of spindle arms located above a plurality of stations in a processing chamber to transport a semiconductor substrate between the stations. The spindle arms reside in the processing chamber during processing of the semiconductor substrate. The system comprises first gas lines arranged below the stations to supply a purge gas. The system comprises second gas lines extending upwards from the first gas lines to supply the purge gas to the spindle arms during the processing of the semiconductor substrate in the processing chamber.