The semiconductor structure includes a die structure including: a substrate, a first dielectric disposed over the substrate, a first interconnect structure disposed within the first dielectric, a second dielectric disposed on the first dielectric, and a conductive pad surrounded by the second dielectric; a capping member surrounding the die structure; and an insulating member surrounding the capping member, wherein the capping member includes a first oxynitride layer in contact with the die structure or the insulating member.

A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.

A semiconductor device includes a semiconductor element, a sealing member, and a rewiring layer. The rewiring layer includes an insulating layer covering a front surface of the semiconductor element and a part of the sealing member, an electrode connected to the semiconductor element, and an externally-exposed layer being conductive and covering a portion of the electrode exposed from the insulating layer.

Methods for substrate processing include attaching a plurality of dies to a first carrier, wherein each die has a first side and a second side opposite the first side, wherein the first side is attached to the first carrier and wherein the plurality of dies are spaced horizontally from one another on the first carrier; filling spaces between the plurality of dies and covering the second sides of the plurality of dies with a dielectric or metal; grinding or polishing the dielectric or metal covering the second sides and grinding or polishing the second sides until the second sides are exposed and the plurality of dies have a substantially uniform thickness; and after grinding or polishing, dishing die faces of the plurality of dies to a desired dishing profile.

An electronic package is provided, where a laterally diffused metal oxide semiconductor (LDMOS) type electronic structure is mounted onto a complementary metal oxide semiconductor (CMOS) type electronic element to be integrated into a chip module, thereby shortening electrical transmission path between the electronic structure and the electronic element so as to reduce the communication time between the electronic structure and the electronic element.

In examples, a chip scale package (CSP) comprises a semiconductor die; a conductive terminal coupled to the semiconductor die; and a non-conductive coat covering a backside of the semiconductor die and a sidewall of the semiconductor die. The non-conductive coat has a thickness of less than 45 microns.

A semiconductor device has a substrate and a first light sensitive material formed over the substrate. A plurality of first conductive posts is formed over the substrate by patterning the first light sensitive material and filling the pattern with a conductive material. A plurality of electrical contacts is formed over the substrate and the conductive posts are formed over the electrical contacts. A first electric component is disposed over the substrate between the first conductive posts. A plurality of second conductive posts is formed over the first electrical component by patterning a second light sensitive material and filling the pattern with conductive material. A first encapsulant is deposited over the first electrical component and conductive posts. A portion of the first encapsulant is removed to expose the first conductive posts. A second electrical component is disposed over the first electrical component and covered with a second encapsulant.

An integrated circuit die includes a semiconductor substrate, an interconnect layer including bonding pads, and a passivation layer covering the interconnect layer and including openings at the bonding pads. A conductive redistribution layer including conductive lines and conductive vias is supported by the passivation layer. An insulating layer covers the conductive redistribution layer and the passivation layer. Channels formed in an upper surface of the insulating layer delimit pedestal regions in the insulating layer. A through via extends from an upper surface of each pedestal region through the pedestal region and the insulating layer to reach and make contact with a portion of the conductive redistribution layer. A metal pad is formed at the upper surface of each pedestal region in contact with its associated through via. The metal pads for leads of a quad-flat no-lead (QFN) type package.

A semiconductor device of an embodiment includes: a first semiconductor element; a first insulating resin that seals the first semiconductor element; a wiring substrate having a pad; a first wiring that extends from the first semiconductor element toward the wiring substrate, and has a first head portion and a first column portion, the first column portion connected to the first semiconductor element and the first head portion exposed on a surface of the first insulating resin; and a first conductive bonding agent that electrically connects the first head portion of the first wiring and the pad. When a surface of the first head portion facing a side of the first insulating resin is defined as a first surface. A surface of the first insulating resin on a side of the wiring substrate is defined as a second surface. A distance from a surface of the wiring substrate on a side of the first insulating resin to the first surface is defined as a first distance, and a distance from a surface of the wiring substrate on the side of the first insulating resin to the second surface is defined as a second distance. The first distance is shorter than the second distance.

Embodiments of the invention include molded modules and methods for forming molded modules. According to an embodiment the molded modules may be integrated into an electrical package. Electrical packages according to embodiments of the invention may include a die with a redistribution layer formed on at least one surface. The molded module may be mounted to the die. According to an embodiment, the molded module may include a mold layer and a plurality of components encapsulated within the mold layer. Terminals from each of the components may be substantially coplanar with a surface of the mold layer in order to allow the terminals to be electrically coupled to the redistribution layer on the die. Additional embodiments of the invention may include one or more through mold vias formed in the mold layer to provide power delivery and/or one or more faraday cages around components.