A package structure includes a first dielectric layer disposed on a first patterned circuit layer, a first conductive via in the first dielectric layer and electrically connected to the first patterned circuit layer, a circuit layer on the first dielectric layer, a second dielectric layer on the first dielectric layer and covering the circuit layer, a second patterned circuit layer on the second dielectric layer and including conductive features, a chip on the conductive features, and a molding layer disposed on the second dielectric layer and encapsulating the chip. The circuit layer includes a plurality of portions separated from each other and including a first portion and a second portion. The number of pads corresponding to the first portion is different from that of pads corresponding to the second portion. An orthographic projection of each portion overlaps orthographic projections of at least two of the conductive features.

A package structure includes a die, an encapsulant laterally encapsulating the die, a warpage control material disposed over the die, and a protection material disposed over the encapsulant and around the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

A method of manufacturing a package structure at least includes the following steps. An encapsulant laterally is formed to encapsulate the die and the plurality of through vias. A plurality of first connectors are formed to electrically connect to first surfaces of the plurality of through vias. A warpage control material is formed over the die, wherein the warpage control material is disposed to cover an entire surface of the die. A protection material is formed over the encapsulant and around the plurality of first connectors and the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

Embodiments include packages and methods for forming packages which include interposers having a substrate made of a dielectric material. The interposers may also include a redistribution structure over the substrate which includes metallization patterns which are stitched together in a patterning process which includes multiple lateral overlapping patterning exposures.

A package structure including a semiconductor die, a redistribution layer, a plurality of antenna patterns, a die attach film, and an insulating encapsulant is provided. The semiconductor die have an active surface and a backside surface opposite to the active surface. The redistribution layer is located on the active surface of the semiconductor die and electrically connected to the semiconductor die. The antenna patterns are located over the backside surface of the semiconductor die. The die attach film is located in between the semiconductor die and the antenna patterns, wherein the die attach film includes a plurality of fillers, and an average height of the die attach film is substantially equal to an average diameter of the plurality of fillers. The insulating encapsulant is located in between the redistribution layer and the antenna patterns, wherein the insulating encapsulant encapsulates the semiconductor die and the die attach film.

A packaging structure and a formation method thereof are provided. The packaging structure includes a carrier board, and a plurality of semiconductor chips adhered to the carrier board. Each semiconductor chip has a functional surface and a non-functional surface opposite to the functional surface, and a plurality of pads are formed on the functional surface of a semiconductor chip of the plurality of chips. A metal bump is formed on a surface of a pad of the plurality of pads, and a first encapsulation layer is formed on the functional surface. The packaging structure also includes a second encapsulation layer formed over the carrier board.

In one example, an electronic device, comprises a substrate comprising a dielectric structure and a conductive structure, an electronic component over a top side of the substrate, wherein the electronic component is coupled with the conductive structure; an encapsulant over the top side of the substrate and contacting a lateral side of the electronic component, wherein the encapsulant comprises a first trench on a top side of the encapsulant adjacent to the electronic component, a lid over the top side of the encapsulant and covering the electronic component; and an interface material between the top side of the encapsulant and the lid, and in the first trench. Other examples and related methods are also disclosed herein.

A bonded structure is disclosed. The bonded structure can include an interconnect structure. The bonded structure can also include a first die directly bonded to the interconnect structure. The bonded structure can also include a second die mounted to the interconnect structure. The second die is spaced apart from the first die laterally along an upper surface of the interconnect structure. The second die is electrically connected with the first die at least partially through the interconnect structure. The bonded structure can further include a dielectric layer that is disposed over the upper surface of the interconnect structure between the first die and the second die.

As an example of a semiconductor device is disclosed. The semiconductor device 1 includes a semiconductor die 3 and a wiring layer 5a to which the semiconductor die 3 is attached. The semiconductor die 3 includes a semiconductor substrate 3a having a first surface and a second surface opposite thereto, a plurality of terminal electrodes 3b provided on the first surface of the semiconductor substrate 3a, and a cured resin layer 3c. The cured resin layer 3c is provided on the first surface of the semiconductor substrate 3a so as to cover the plurality of terminal electrodes 3c. The semiconductor die 3 can be, for example, a bride die that connects a semiconductor die 2a and a semiconductor die 2b to each other.

The present disclosure relates to a method for manufacturing electronic chips comprising, in order:

a. forming metal contacts on the side of a first face of a semiconductor substrate, in and on which a plurality of integrated circuits have been previously formed;

b. depositing a first protective resin on the metal contacts and the first face of the semiconductor substrate;

c. forming first trenches of a first width on the side of a second face of the semiconductor substrate;

d. depositing a second protective resin in the first trenches and on the second face of the semiconductor substrate;

e. forming second trenches of a second width, less than the first width, opposite the first trenches up to the metal contacts; and

f. forming third trenches opposite the second trenches, the third trenches extending through the metal contacts.