Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate, a first die coupled to the package substrate with first interconnects, and a second die coupled to the first die with second interconnects, wherein the second die is coupled to the package substrate with third interconnects, a communication network is at least partially included in the first die and at least partially included in the second die, and the communication network includes a communication pathway between the first die and the second die.

A package substrate according to the present disclosure includes a package substrate, an interposer disposed over the package substrate, a photonic die disposed over the interposer, a memory structure disposed over the interposer and including a controller die, a system die disposed over the interposer and partially overlapping with the photonic die and the controller die, and a lid covering the system die, the memory structure, and photonic die. The system die includes micro bumps extending from a bottom surface of the system die to a top surface of the controller die.

A semiconductor package comprises a first die having a central region and a peripheral region that surrounds the central region; a plurality of through electrodes that penetrate the first die; a plurality of first pads at a top surface of the first die and coupled to the through electrodes; a second die on the first die; a plurality of second pads at a bottom surface of the second die, the bottom surface of the second die facing the top surface of the first die; a plurality of connection terminals that connect the first pads to the second pads; and a dielectric layer that fills a space between the first die and the second die and surrounds the connection terminals. A first width of each of the first pads in the central region may be greater than a second width of each of the first pads in the peripheral region.

The technology of this application relates to a board-level structure that includes an upper-layer substrate, a lower-layer substrate, and a plurality of support members that are supported between the upper-layer substrate and the lower-layer substrate. In an example embodiment, a gap exists between the upper-layer substrate and the lower-layer substrate, the gap includes at least one first gap region and at least one second gap region, the first gap region and the second gap region are spaced, a spaced region between the first gap region and the second gap region does not include the first gap region or the second gap region, and a maximum vertical distance between the upper-layer substrate and the lower-layer substrate in the first gap region is less than a minimum vertical distance between the upper-layer substrate and the lower-layer substrate in the second gap region.

A method of electroplating a metal into features, having substantially different depths, of a partially fabricated electronic device on a substrate is provided. The method includes adsorbing accelerator into the bottom of recessed features; partially filling the features by a bottom up fill mechanism in an electroplating solution; diffusing leveler into shallow features to decrease the plating rate in shallow features as compared to deep features; and electroplating more metal into the features such that the height of metal in deep features is similar to the height of metal in shallow features.

A semiconductor package includes a redistribution structure, at least one semiconductor device, a heat dissipation component, and an encapsulating material. The at least one semiconductor device is disposed on and electrically connected to the redistribution structure. The heat dissipation component is disposed on the redistribution structure and includes a concave portion for receiving the at least one semiconductor device and an extending portion connected to the concave portion and contacting the redistribution structure, wherein the concave portion contacts the at least one semiconductor device. The encapsulating material is disposed over the redistribution structure, wherein the encapsulating material fills the concave portion and encapsulates the at least one semiconductor device.

The present application describes a display panel and a display device. The display panel according to the present application includes: an array substrate; and a plurality of pixels, the pixels including light-emitting elements; wherein the light-emitting element is located at a side of the array substrate and includes a light-emitting region and a non-light-emitting region; and wherein at least two of the light-emitting elements are arranged in different manners.

The present disclosure provides a memory system packaging structure and fabrication methods. The memory system packaging structure includes memory modules, a memory controller, a redistribution layer electrically connected to the memory controller, a plastic encapsulation layer encapsulating the memory modules and the memory controller, and one or more connecting pillars extending in the vertical direction and configured for providing electric power to the memory modules. Each memory module includes memory dies stacked in a vertical direction. Each connecting pillar includes a first portion being in physical contact with one of the memory dies and a second portion being in physical contact with the redistribution layer.

Implementations of a semiconductor package may include a die; a first pad and a second pad, the first pad and the second pad each including a first layer and a second layer where the second layer may be thicker than the first layer. At least a first conductor may be directly coupled to the second layer of the first pad; at least a second conductor may be directly coupled to the second layer of the second pad; and an organic material may cover at least the first side of the die. The at least first conductor and the at least second conductor extend through openings in the organic material where a spacing between the at least first conductor and the at least second conductor may be wider than a spacing between the second layer of the first pad and the second layer of the second pad.

Semiconductor packages, and methods for manufacturing semiconductor packages are provided. In one aspect, a method of manufacturing a semiconductor package includes stacking a plurality of semiconductor chips including a first semiconductor chip and a second semiconductor chip, the first semiconductor ship being offset from the second semiconductor ship to expose upper connection pads; forming a multilayered photoresist film to cover the plurality of semiconductor chips; forming a plurality of openings by exposing and developing the multilayered photoresist film; forming a plurality of conductive posts by filling the plurality of openings with a conductive material; removing the multilayered photoresist film; forming a molding encapsulant to surround the plurality of semiconductor chips and the plurality of conductive posts; and forming a wiring structure electrically connected to the plurality of conductive posts. The multilayered photoresist film comprises at least two layers having different chemical resistances and resolutions.