A semiconductor device includes an insulated circuit substrate, a semiconductor chip, a printed circuit board, an interposer, and a sealing member, the interposer including a plurality of post electrodes each having one end bonded to the semiconductor chip via a solder layer, an insulating layer provided to be separately opposed to the semiconductor chip and provided with a first penetration hole filled with part of the solder layer, and a conductor layer provided to be opposed to the printed circuit board and connected to another end of each of the post electrodes via the insulating layer.

A package for a semiconductor device includes a metal base plate, a wall portion, a first metal film, and a lead portion. The base plate has a first region and a second region surrounding the first region. The wall portion has a first frame body comprising metal and a second frame body comprising resin. The first frame body is provided on the second region. The second frame body is provided on the first frame body. The first metal film is provided on the second frame body. The lead portion is conductively bonded to the first metal film. The first frame body is conductively bonded to the base plate. A thickness of the first frame body in a first direction that is a direction in which the first frame body and the second frame body are arranged is larger than a thickness of the first metal film in the first direction.

A lead frame according to the present embodiments includes: a main body portion having a main surface including a mounting region on which a semiconductor chip is to be mounted; a lead portion connected to the main body portion; a groove portion provided in a main surface of the main body portion so as to surround the mounting region, the groove portion having an inner side surface and an outer side surface; and a protruding portion protrudingly provided along an inner edge of the groove portion.

According to a manufacturing method of the present invention, it is possible to manufacture a busbar assembly in an efficient manner, the busbar assembly including busbars disposed in parallel in a common plane and an insulative resin layer including a gap filling portion filled into a gap between the adjacent busbars and a bottom-surface-side laminated portion extending integrally from the gap filling portion and arranged on bottom surfaces of the busbars, a top surface of the busbar being at least partially exposed to form a top-surface-side connection portion, the bottom surface of the busbar including a first bottom surface region which is located at the same position in a thickness direction as a lower end portion of the gap and on which the bottom-surface-side laminated portion is arranged and a second bottom surface region located farther away from the top surface than the first bottom surface region and exposed to the outside to form a bottom-surface-side connection portion.

There is provided a semiconductor device 1, comprising: a housing comprising a housing electrode 4; and at least one semiconductor chip 20 arranged within the housing; wherein the housing electrode 4 comprises a deformable portion 15, and the deformable portion 15 is configured to deform when a pressure difference between an interior and an exterior of the housing exceeds a threshold differential pressure or a temperature at the deformable portion exceeds a threshold temperature, so as to transform the housing from a hermetically sealed housing to an open housing in fluid communication with the exterior.

A high-frequency device includes a metal base, a dielectric substrate mounted on the metal base, an insulator layer provided on the metal base, covering the dielectric substrate, and having a dielectric constant smaller than that of the dielectric substrate, and a first line that overlaps the dielectric substrate as seen from a thickness direction of the insulator layer and is provided on an upper surface of the insulator layer to form a first microstrip line.

A power module is provided. The power module is disposed on a main board. The power component includes a first surface, a second surface, a source terminal, a gate terminal and a drain terminal. The source terminal and the gate terminal are disposed on the first surface. The drain terminal is disposed on the second surface. The first solder layer is attached to the first surface and connected with the source terminal and the gate terminal. The first solder layer is disposed on a metal surface of the main board. The second solder layer is attached to the second surface and connected with the drain terminal. The drain terminal is away from the main board than the source terminal and the gate terminal. The conductive component is connected with the first solder layer and the second solder layer.

A semiconductor assembly includes a top substrate and a base substrate attached to top and bottom electrode layers of a semiconductor device, respectively. The top substrate includes an electrode connection plate thermally conductible with and electrically connected to the top electrode layer of the semiconductor device and vertical posts protruding from the electrode connection plate and electrically connected to the base substrate. The base substrate includes an electrode connection slug embedded in a dielectric layer and thermally conductible with and electrically connected to the bottom electrode layer of the semiconductor device and first and second routing circuitries deposited on two opposite surfaces of the dielectric layer, respectively, and electrically connected to each other.

A semiconductor module includes a wiring board having a semiconductor element mounted thereon, and a heat dissipation base bonded to the wiring board via a bonding material. In a cross section passing through corners both an insulating layer of the wiring board and a second conductor layer on the insulating layer in plan view, in a horizontal direction, a distance from the second conductor layer to a peripheral edge of the bonding material on the second conductor layer is equal to or less than a thickness of the bonding material between the second conductor layer and the heat dissipation base, and a distance from the second conductor layer to a non-bonded region provided on the heat dissipation base around the bonding material is equal to or less than a distance from the second conductor layer to a peripheral edge of the insulating layer on a second surface.

An electronic device includes a multilevel ceramic body, first, second, and third plates, and first and second semiconductor dies, with the multilevel ceramic body having opposite first and second sides, a first and second openings in the first side, a third opening in the second side, and a ceramic separator structure defining first and second interior portions between the first and second openings. The first plate is attached to the first side and covers the first opening, the second plate is attached to the first side and covers the second opening, the third plate is attached to the second side and covers the third opening, the first semiconductor die is in the first interior portion, and the second semiconductor die is in the second interior portion of the ceramic body.