Patent classifications
H10W70/02
Micro heat pipe for use in semiconductor IC chip package
A micro heat transfer component includes a bottom metal plate; a top metal plate; a plurality of sidewalls each having a top end joining the top metal plate and a bottom end joining the bottom metal plate, wherein the top and bottom metal plates and the sidewalls form a chamber in the micro heat transfer component; a plurality of metal posts in the chamber and between the top and bottom metal plates, wherein each of the metal posts has a top end joining the top metal plate and a bottom end joining the bottom metal plate; a metal layer in the chamber, between the top and bottom metal plates and intersecting each of the metal posts, wherein a plurality of openings are in the metal layer, wherein a first space in the chamber is between the metal layer and bottom metal plate and a second space in the chamber is between the metal layer and top metal plate; and a liquid in the first space in the chamber.
Flux and method for producing electronic component
Provided is a flux that can suppress the generation of voids when an indium alloy sheet is used to perform a continuous reflow under different temperature conditions. The present invention employs a flux that contains a rosin ester, an organic acid (A), and a solvent (S). The organic acid (A) includes a dimer acid (A1) that demonstrates a weight reduction rate of not more than 1 mass % in a thermogravimetric analysis in which the dimer acid is heated up to 260 C. at a temperature rising rate of 10 C./min. The solvent (S) includes a solvent (S1) that demonstrates the weight reduction rate of at least 99 mass % in a thermogravimetric analysis in which the solvent (S1) is heated up to 150 C. at a temperature rising rate of 6 C./min.
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
A semiconductor device includes a semiconductor element, a sealing member, and a rewiring layer. The rewiring layer includes an insulating layer covering a front surface of the semiconductor element and a part of the sealing member, an electrode connected to the semiconductor element, and an externally-exposed layer being conductive and covering a portion of the electrode exposed from the insulating layer.
Porous mesh structures for the thermal management of integrated circuit devices
A porous mesh structure for use in the thermal management of integrated circuit devices may be formed as a solid matrix with a plurality of pores dispersed therein, wherein the solid matrix may be a plurality of fused matrix material particles and the plurality of pores may comprise between about 10% and 90% of a volume of the porous mesh structure. The porous mesh structure may be formed on an integrated circuit device and/or on a heat dissipation assembly component, and may be incorporated into an immersion cooling assembly, wherein the porous mesh structure may act as a nucleation site for a working fluid in the immersion cooling assembly.
Semiconductor device package thermally coupled to passive element
A semiconductor assembly includes a device carrier that includes a dielectric core region and a plurality of contact pads disposed on an upper surface, a semiconductor device package having a plurality of lower surface terminals, a discrete passive element comprising a main body and a pair of leads, and a region of gap filler material, wherein the semiconductor device package is mounted on the device carrier with the lower surface terminals facing and electrically connected to a group of the contact pads, wherein the discrete passive element is mounted on the device carrier with the pair of leads electrically connecting with contact surfaces on the device carrier, and wherein the region of gap filler material is arranged between a lower surface of the main body and the upper surface of the semiconductor device package and thermally couples the semiconductor device package to the discrete passive element.
Semiconductor device and methods of making and using thermally advanced semiconductor packages
A semiconductor device includes a substrate. A semiconductor die is disposed over the substrate. An encapsulant is deposited over the substrate and semiconductor die. A first trench is formed in the encapsulant over the semiconductor die. A conductive layer is formed over the encapsulant and into the first trench.
METHOD FOR CONNECTING A COOLER MODULE TO A METAL PLATE AND COMPONENT
The present invention relates to a method of connecting a cooler module (4) to a metal plate by a sintering process, wherein the cooler module (4) comprises a metallic housing (5) having a coolant inlet (7), a coolant outlet (8) and a first housing side (9), and within the housing (5) a coolant flow structure (6), and wherein the method comprises the steps of: introducing at least one glycol between the coolant flow structure (6), applying a sinter paste and sintering to join the metal plate and the first housing side (9) under pressure and temperature.
Method for manufacturing busbar assembly
According to a manufacturing method of the present invention, it is possible to manufacture a busbar assembly in an efficient manner, the busbar assembly including busbars disposed in parallel in a common plane and an insulative resin layer including a gap filling portion filled into a gap between the adjacent busbars and a bottom-surface-side laminated portion extending integrally from the gap filling portion and arranged on bottom surfaces of the busbars, a top surface of the busbar being at least partially exposed to form a top-surface-side connection portion, the bottom surface of the busbar including a first bottom surface region which is located at the same position in a thickness direction as a lower end portion of the gap and on which the bottom-surface-side laminated portion is arranged and a second bottom surface region located farther away from the top surface than the first bottom surface region and exposed to the outside to form a bottom-surface-side connection portion.
METHODS OF MAKING AN ELECTRICAL POWER MODULE AND ELECTRONICS PACKAGE
A method of making an electronics package for an electrical power module includes positioning a base plate into an electrolyte solution such that a first metallic layer of the base plate directly contacts the electrolyte solution. The method also includes positioning a deposition anode array into the electrolyte solution such that a gap is established between the first metallic layer and the deposition anode array. The method further includes connecting the first metallic layer to a power source and connecting the deposition anode array to the power source. The method also includes transmitting electrical energy from the power source through the deposition anode array, through the electrolyte solution, and to the first metallic layer, such that material is deposited onto the first metallic layer and forms an electrical connection pillar, an electrical-component retention feature, and an encapsulant retention feature of the electronics package.
ELECTRICAL POWER MODULE AND ELECTRONICS PACKAGE
An electrical power module includes a base plate, including an electrically isolating substrate and a first metallic layer formed on a first side of the electrically isolating substrate. The electrical power module also includes electrical connection pillars extending from the first metallic layer. The electrical power module further includes at least one encapsulant retention feature extending from the first metallic layer and including at least one surface that is angled or parallel relative to the first side of the electrically isolating substrate and faces the first side of the electrically isolating substrate. The electrical power module additionally includes at least one electrical component electrically coupled with the metallic layer of the base plate. The electrical power module further includes an encapsulant encapsulating the at least one electrical component, the metallic layer, and the at least one encapsulant retention feature and partially encapsulating the electrical connection pillars.