A heat conductive sheet having excellent adhesion between an acrylic resin layer and a supporting sheet is provided. The heat conductive sheet includes a heat conductive resin layer including a heat conductive acrylic resin composition; and a supporting resin layer (supporting sheet) containing a polyvinyl acetal resin and a styrene-vinyl isoprene block copolymer. Crosslinking of the supporting sheet with acrylic monomers of the acrylic heat conductive resin layer enables improvements in adhesion between the heat conductive resin layer and the supporting sheet.

Devices and method for forming a chip package assembly, including a package substrate, a fan-out package attached to the package substrate, the fan-out package including a first semiconductor die including a first physical interface and a second semiconductor die including a second physical interface. The chip package assembly further including a heatsink structure including a heatsink base and a cavity within the heatsink base, and a thermoelectric cooler (TEC) embedded within the cavity, wherein the TEC is positioned above the first physical interface and the second physical interface.

[Problem] To directly bond a metal layer in a thin line shape to a surface of a ceramic substrate.

[Solution] A method for producing a ceramic-metal bonded object including irradiating a surface of a ceramic substrate with a laser beam while sweeping the laser beam, and simultaneously therewith, feeding a solid metal material toward a region irradiated with the laser beam on the surface of the ceramic substrate (hereinafter referred to as irradiation area), so that the metal material being fed is also brought into a state of being irradiated with the laser beam to melt the metal material while heating the surface of the ceramic substrate located in the irradiation area, and depositing the molten metal material on the surface of the ceramic substrate and then solidifying the metal material.

Semiconductor packages and/or assemblies having microchannels, a microchannel module, and/or a microfluidic network for thermal management, and associated systems and methods, are disclosed herein. The semiconductor package and/or assembly can include a substrate integrated with a microchannel and a coolant disposed within the microchannel to dissipate heat from a memory device and/or a logic device of the semiconductor package and/or assembly. The microchannel can be configured beneath the memory device and/or the logic device.

A base plate for a power semiconductor module includes a layer of a metallic material; and at least one first area formed in the layer of metallic material in which either the layer of metallic material is locally deformed, or a stress is locally increased in the layer of metallic material, or both such that a deflection or a local stress or both in the at least one first area differs from a deflection or a local stress or both of those areas of the metallic layer surrounding the at least one first area.

A semiconductor package structure according to the present disclosure includes a substrate, an interposer bonded to the substrate by way of a plurality of first type solder features, and an integrated circuit (IC) die bonded to the interposer by way of a plurality of second type solder features. The interposer includes a redistribution structure and a seal ring structure extending around the redistribution structure. At least one of the plurality of second type solder features is electrically coupled to the seal ring structure.

A power electronics device comprises a power electronics carrier includes a non-corrosive metal substrate and a region of electrical isolation material that forms a direct interface with the metal substrate, and a first semiconductor die mounted on the region of electrical isolation material, and a coefficient of thermal expansion of the region of electrical isolation material substantially matches a coefficient of thermal expansion of metal from the metal substrate at the direct interface.

A joined body production method includes subjecting a first electronic component and a second electronic component to thermocompression bonding via a hot-melt adhesive sheet. The hot-melt adhesive sheet includes a binder and solder particles. The binder includes a crystalline polyamide resin having a carboxyl group. A melting point of the solder particles is 30 C. to 0 C. lower than a temperature of the thermocompression bonding. When melt viscosities of the hot-melt adhesive sheet are measured under a condition of a heating rate of 5 C./min., the hot-melt adhesive sheet has a ratio of a melt viscosity at 40 C. lower than the temperature of the thermocompression bonding to a melt viscosity at 20 C. lower than the temperature of the thermocompression bonding of no less than 10.

An electronic device includes a semiconductor die having a first side attached to a substrate, a first plate having a first portion attached to a second side of the semiconductor die and a second portion extending from the first portion away from the semiconductor die, a metal clip having a second clip portion coupled to a first conductive feature of the substrate, a third clip portion coupled to a second conductive feature of the substrate, and a first clip portion above and spaced apart from the first portion of the first plate that extends between the second and third clip portions, a magnetic molding compound package structure enclosing the metal clip, the semiconductor die, and the first portion of the first plate, and a second plate exposed outside the package structure and thermally coupled to the second portion of the first plate.

A semiconductor device including a substrate, a semiconductor package, a thermal conductive bonding layer and a lid is provided. The semiconductor package is disposed on the substrate. The thermal conductive bonding layer is disposed on the semiconductor package. The lid is attached to the semiconductor package via the thermal conductive bonding layer. The lid has a first cavity and a second cavity connected to the first cavity. The semiconductor package is located in the first cavity, and the thermal conductive bonding layer is partially disposed in the second cavity. The second cavity has a first portion and a second portion joined with the first portion and narrower than the first portion, the second portion is located between the first portion and the first cavity, and the thermal conductive bonding layer is formed in the second portion. A method for manufacturing a semiconductor device is also provided.