A manufacturing apparatus of a semiconductor device includes: a stage; a bonding head, including a mounting tool, a tool heater, and a lifting and lowering mechanism; and a controller performing bonding processing. The controller performs, in the bonding processing: first processing in which, after a chip is brought into contact with a substrate, as heating of the chip is started, the chip is pressurized against the substrate; distortion elimination processing in which, after the first processing and before melting of a bump, the lifting and lowering mechanism is driven in a lifting direction, thereby eliminating distortion of the bonding head; and second processing in which, after the distortion elimination processing, position control is performed on the lifting and lowering mechanism so as to cancel thermal expansion and contraction of the bonding head, thereby maintaining a gap amount at a specified target value.

Vapor delivery apparatus configured for generating a gaseous precursor from solid source precursor particles in a fluidized bed are disclosed. In addition, vapor phase reactors including a vapor delivery apparatus including a fluidized bed of solid precursor are also disclosed. Methods for monitoring and a controlling a vapor delivery system including a fluidized bed also disclosed.

Methods and apparatus of hybrid bonding with inspection are provided herein. In some embodiments, a method of hybrid bonding with inspection includes: cleaning a substrate via a first cleaning chamber and a tape frame having a plurality of chiplets via a second cleaning chamber; inspecting, via a first metrology system, the substrate for pre-bond defects in a first metrology chamber and the tape frame for pre-bond defects in a second metrology chamber; bonding one or more of the plurality of chiplets to the substrate via a hybrid bonding process in a bonder chamber to form a bonded substrate; and performing, via a second metrology system different than the first metrology system, a post-bond inspection of the bonded substrate via a third metrology chamber for post-bond defects.

A mask member, a light emitting element transfer device, and a transfer method are provided. A mask member includes a first mask including a light blocking pattern layer and a base layer, wherein the light blocking pattern layer of the first mask includes a plurality of opening patterns, and a second mask including a light blocking pattern layer and a base layer, wherein the light blocking pattern layer of the second mask includes a plurality of opening patterns disposed at angles relative to a center of the second mask. The mask member defining a transfer area by overlapping an opening pattern of the plurality of opening patterns of the first mask and an opening pattern of the plurality of opening patterns of the second mask.

A mask-to-donor alignment method for laser-induced forward transfer includes (a) directing a laser beam onto a mask to produce a masked beam including one or more separate sub-beams, each sub-beam being transmitted by a respective aperture of the mask, (b) viewing each sub-beam, as transmitted by a donor substrate carrying one or more devices, to obtain imagery indicating in each sub-beam a shadow of a corresponding one of the one or more devices, and (c) based on the imagery, adjusting position of the masked beam and the donor substrate, relative to each other, so as to align each device with respect to the corresponding sub-beam. This in-situ observation of the relative alignment between the donor substrate and the masked beam produces an improved alignment accuracy, as compared to the indirect fiducial-based alignment method. Alignment accuracies better than 0.2 m, and associated sub-1 m LIFT positioning accuracies, have been demonstrated.

The present disclosure relates to semiconductor-device manufacturing equipment. An example semiconductor-device manufacturing equipment incudes a stage that supports a substrate, a head module disposed on top of the stage and including a first bonding head and a second bonding head spaced apart from each other, wherein the head module is configured to bond a die onto the substrate, and a controller configured to control the head module. The head module is configured to move to a first position in a state in which the first bonding head and the second bonding head have respectively picked up a first die and a second die. At the first position, the first bonding head is configured to descend and bond the first die onto a first non-defective chip of the substrate, and the second bonding head is configured to descend and bond the second die onto a second non-defective chip of the substrate.

Methods of hybrid bonding with inspection are provided herein. In some embodiments, a method of hybrid bonding with inspection includes: cleaning a substrate via a first cleaning chamber and a tape frame having a plurality of chiplets via a second cleaning chamber; inspecting, via a first metrology system, the substrate for pre-bond defects in a first metrology chamber and the tape frame for pre-bond defects in a second metrology chamber; bonding one or more of the plurality of chiplets to the substrate via a hybrid bonding process in a bonder chamber to form a bonded substrate; and performing, via a second metrology system different than the first metrology system, a post-bond inspection of the bonded substrate via a third metrology chamber for post-bond defects.

A stamp for transferring a micro light emitting diode (LED). The stamp includes a base substrate; a plurality of voltage applying pads disposed on the base substrate; a plurality of mesa structure units disposed on the base substrate; a plurality of mesa electrode units disposed on one surface of each of the plurality of mesa structure units; and a plurality of voltage applying wires connected to each of the plurality of voltage applying pads, in which each of the plurality of mesa electrode units is connected to a different voltage applying wire among the plurality of voltage applying wires. Accordingly, by individually controlling voltages applied to the plurality of mesa structure units to selectively transfer the micro-LEDs, an over-transfer defect may be suppressed.

A method includes positioning a discrete component assembly on a support fixture of a component transfer system, the discrete component assembly including a dynamic release tape including a flexible support layer, and a dynamic release structure disposed on the flexible support layer, and a discrete component adhered to the dynamic release tape. The method includes irradiating the dynamic release structure to release the discrete component from the dynamic release tape.

An apparatus for producing a semiconductor device comprises a stage, a bonding head, a bonding tool and a first camera that are attached to the bonding head, and a controller, the apparatus moreover being such that the controller is configured to execute for each of one or more points: a process of mounting an inspection chip on a mounting surface; a process of acquiring, as an inspection image, an image of the mounting surface after the inspection chip has been mounted thereon captured by the first camera; a process of calculating, as an area correction amount C, a correction amount for a camera offset amount Ocm on the basis of the position of the inspection chip in the inspection image; and a process of associating the calculated area correction amount C and the position of a discretionary point and then storing the associated information in a storage device.