A chip transferring method includes steps of: providing a plurality of chips on a first load-bearing structure; measuring photoelectric characteristic values of the plurality of chips; categorizing the plurality of chips into a first portion of the plurality of chips and a second portion of the plurality of chips according to the photoelectric characteristic values of the plurality of chips, wherein the second portion of the plurality of chips comprise parts of the plurality of chips which photoelectric characteristic value falls within an unqualified range; removing the second portion of the plurality of chips from the first load-bearing structure; dividing the first portion of the plurality of chips into a plurality of blocks, wherein each of the plurality of blocks comprising multiple chips of the first portion of the plurality of chips; and transferring the first portion of the plurality of chips in one of the plurality of blocks to a second load-bearing structure in single-batch.

A temporary fixation substrate, peeled from a predetermined object to be fixed after once the predetermined object to be fixed is temporarily fixed to one main surface thereof, includes: a thin region being an annular region having a predetermined width from a lateral end; and a first thickness-reduced portion having been recessed from the one main surface on a side of the one main surface in the thin region, wherein a thickness in the thin region is smaller than a thickness in a region other than the thin region, and a difference between a thickness at the lateral end and the thickness in the region other than the thin region is 1 m to 5 m.

A method of preparing a device coupon for a micro-transfer printing process from a multi-layered stack located on a device wafer substrate. The multi-layered stack comprises a plurality of semiconductor layers. The method comprises steps of: (a) etching the multi-layered stack to form a multi-layered device coupon, including an optical component; and (b) etching a semiconductor layer of the multi-layered device coupon to form one or more tethers, said tethers securing the multi-layered device coupon to one or more supports.

Described herein are manufacturing techniques and packages that enable wafer-scale heterogenous integration of electronic integrated circuits (EIC) with photonic integrated circuits (PIC) using a reconstitution-based fabrication approach. Wafer-scale photonic devices are formed by assembling strips of known-good dies (KGD). Such strips include arrays of adjacent reticles that have been singulated from a wafer. A strip can include a single row (or column) of reticles singulated from a wafer or multiple rows (or columns) that are adjacent to one another, enabling two-dimensional assembly and increased coverage. Wafer reconstitution involves transferring and bonding one or more strips of KGDs to a target substrate. A KGD is a reticle that is not part of an exclusion zone and has been verified to work properly. Thus, a reconstituted wafer includes strips that have verified to be fully functional.

A semiconductor die assembly is introduced in this disclosure. The semiconductor die assembly includes one or more semiconductor dies, a dielectric layer disposed under a bottom surface of the one or more semiconductor dies, and metal fragments or a metal layer disposed under the dielectric layer, wherein metal-OH bonds or metal-OSiOH bonds are disposed on a bottom surface of the dielectric layer. Alternatively, the semiconductor die assembly includes one or more semiconductor dies, a metal layer disposed under a bottom surface of the one or more semiconductor dies, and a metal oxidation layer disposed under the dielectric layer, wherein the metal oxidation layer comprises metal-OH bonds or metal-OSiOH bonds.

A method of manufacturing a light-emitting unit includes disposing a plurality of light-emitting diode (LED) chips on a carrier, wherein gaps are between the LED chips. The method includes forming a film on the LED chips and the carrier, and transferring at least one of the LED chips onto a first substrate, wherein the film is disconnected in the gaps adjacent to the at least one LED chip during the transferring the at least one of the LED chips onto the first substrate.

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

A method of manufacturing a semiconductor element includes: forming a first semiconductor layer (SL1) and a second semiconductor layer (SL2) larger in thickness than the first semiconductor layer (SL1) on a mask layer (ML) including a first opening portion (K1) and a second opening portion (K2); forming a first device layer (DL1) and a second device layer (DL2); and bonding the first device layer (DL1) and the second device layer (DL2) to a support substrate (SK).

A method of making a semiconductor device may include providing a large semiconductor die comprising conductive interconnects with a first encapsulant disposed over four side surfaces of the large semiconductor die, over the active surface of the large semiconductor die, and around the conductive interconnects. A first build-up interconnect structure may be formed over the large semiconductor die and over the first encapsulant. Vertical conductive interconnects may be formed over the first build-up interconnect structure and around an embedded device mount site. An embedded device comprising through silicon vias (TSVs) may be disposed over the embedded device mount site. A second encapsulant may be disposed over the build-up structure, and around at least five sides of the embedded device. A second build-up structure may be formed disposed over the planar surface and configured to be electrically coupled to the TSVs of the embedded device and the vertical conductive interconnects.

In a micro-device integration process, a donor substrate is provided on which to conduct the initial manufacturing and pixelation steps to define the micro devices, including functional, e.g. light emitting layers, sandwiched between top and bottom conductive layers. The microdevices are then transferred to a system substrate for finalizing and electronic control integration. The transfer may be facilitated by various means, including providing a continuous light emitting functional layer, breakable anchors on the donor substrates, temporary intermediate substrates enabling a thermal transfer technique, or temporary intermediate substrates with a breakable substrate bonding layer.