A micro-device substrate structure includes a support substrate having a support-substrate surface, spatially separated indentations extending into the support substrate, and a micro-device comprising a micro-device body and micro-device posts. The micro-device posts extend from the micro-device body into the support substrate and each of the posts is disposed at least partly in a different indentation. A release layer can be disposed between the micro-device posts and the support substrate. When the release layer is etched, the micro-device can be completely disconnected from the source substrate, removed from the indentations and source substrate, and micro-transfer printed to a target substrate.

A process for transferring a component from a release layer by exposing the release layer to light and heat from different sources is described. The process includes providing an assembly comprising a substrate, a release layer and a component, heating the release layer and exposing the release layer to an actinic wavelength of light, wherein the heating source and the actinic irradiation source are different sources.

The present description concerns a process including the following steps: providing a plurality of assemblies, each including a donor substrate covered by a functional block successively including a first interconnection layer, a functional layer, and a second interconnection layer, the functional layer including one or more electronic components, the interconnection layers including a dielectric material in which are formed conductive elements, a first surface of the first interconnection layer in contact with the donor substrate and the free surface of the second interconnection layer being planarized so as to be compatible with a subsequent direct bonding, successively transferring, onto a receiver substrate the functional blocks, by direct bonding, to form a 3D assembly comprising a receiver substrate covered by a stack of two functional blocks.

A temporary substrate, which is detachable at a detachment temperature higher than 1000 C. comprises: a semiconductor working layer extending along a main plane, a carrier substrate, an intermediate layer having a thickness less than 20 nm arranged between the working layer and the carrier substrate, a bonding interface located in or adjacent the intermediate layer, gaseous atomic species distributed according to a concentration profile along the axis normal to the main plane, the atoms remaining trapped in the intermediate layer and/or in an adjacent layer of the carrier substrate with a thickness less than or equal to 10 nm and/or in an adjacent sublayer of the working layer with a thickness less than or equal to 10 nm when the temporary substrate is subjected to a temperature lower than the detachment temperature.

A method and a device for the separation of structures from a substrate. Furthermore, the invention relates to a method and a device for transferring structures from a first substrate to a second substrate.

A method includes placing a first package component and a second package component over a carrier. The first conductive pillars of the first package component and second conductive pillars of the second package component face the carrier. The method further includes encapsulating the first package component and the second package component in an encapsulating material, de-bonding the first package component and the second package component from the carrier, planarizing the first conductive pillars, the second conductive pillars, and the encapsulating material, and forming redistribution lines to electrically couple to the first conductive pillars and the second conductive pillars.

Methods of making a semiconductor device assembly are provided. The methods can comprise providing a first semiconductor device having a first dielectric material at a first surface, providing a carrier wafer having a second dielectric material at a second surface, and forming a dielectric-dielectric bond between the first dielectric material and the second dielectric material. At least one of the first surface and the second surface includes a region of hydrophobic material electrically isolated from any circuitry of the first semiconductor device and configured to have a reduced bonding strength to a facing region relative to the dielectric-dielectric bond. The method can further include stacking one or more second semiconductor devices over the first semiconductor device to form the semiconductor device assembly, and removing the semiconductor device assembly from the carrier wafer.